JPS5265661A - Method of making silicon single crystal doped in nntype - Google Patents

Method of making silicon single crystal doped in nntype

Info

Publication number
JPS5265661A
JPS5265661A JP14108276A JP14108276A JPS5265661A JP S5265661 A JPS5265661 A JP S5265661A JP 14108276 A JP14108276 A JP 14108276A JP 14108276 A JP14108276 A JP 14108276A JP S5265661 A JPS5265661 A JP S5265661A
Authority
JP
Japan
Prior art keywords
nntype
single crystal
silicon single
making silicon
crystal doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14108276A
Other languages
Japanese (ja)
Other versions
JPS5936819B2 (en
Inventor
Haasu Erunsuto
Puratsutsueedaa Karuru
Rainfuerudaa Hansueeritsuhi
Shiyuneraa Manfureeto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2552621A external-priority patent/DE2552621C3/en
Priority claimed from DE19752553362 external-priority patent/DE2553362C2/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5265661A publication Critical patent/JPS5265661A/en
Publication of JPS5936819B2 publication Critical patent/JPS5936819B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP14108276A 1975-11-24 1976-11-24 Method for manufacturing n-type doped silicon single crystal Expired JPS5936819B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2552621A DE2552621C3 (en) 1975-11-24 1975-11-24 Process for the production of n-doped silicon single crystals with a plate-shaped profile of the specific resistance in the radial direction
DE19752553362 DE2553362C2 (en) 1975-11-27 1975-11-27 Process for the production of n-doped silicon single crystals with a plate-shaped profile of the specific resistance in the radial direction

Publications (2)

Publication Number Publication Date
JPS5265661A true JPS5265661A (en) 1977-05-31
JPS5936819B2 JPS5936819B2 (en) 1984-09-06

Family

ID=25769639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14108276A Expired JPS5936819B2 (en) 1975-11-24 1976-11-24 Method for manufacturing n-type doped silicon single crystal

Country Status (4)

Country Link
JP (1) JPS5936819B2 (en)
DK (1) DK525276A (en)
FR (1) FR2332055A1 (en)
GB (1) GB1530948A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257739A (en) * 1986-04-30 1987-11-10 Toshiba Ceramics Co Ltd Silicon wafer and selector thereof
US11250966B2 (en) 2017-04-24 2022-02-15 Infineon Technologies Ag Apparatus and method for neutron transmutation doping of semiconductor wafers

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257739A (en) * 1986-04-30 1987-11-10 Toshiba Ceramics Co Ltd Silicon wafer and selector thereof
US11250966B2 (en) 2017-04-24 2022-02-15 Infineon Technologies Ag Apparatus and method for neutron transmutation doping of semiconductor wafers

Also Published As

Publication number Publication date
DK525276A (en) 1977-05-25
FR2332055A1 (en) 1977-06-17
JPS5936819B2 (en) 1984-09-06
FR2332055B3 (en) 1980-10-17
GB1530948A (en) 1978-11-01

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