JPS5253676A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5253676A
JPS5253676A JP12946675A JP12946675A JPS5253676A JP S5253676 A JPS5253676 A JP S5253676A JP 12946675 A JP12946675 A JP 12946675A JP 12946675 A JP12946675 A JP 12946675A JP S5253676 A JPS5253676 A JP S5253676A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
self
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12946675A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5548707B2 (cs
Inventor
Takashi Ito
Masaichi Shinoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12946675A priority Critical patent/JPS5253676A/ja
Publication of JPS5253676A publication Critical patent/JPS5253676A/ja
Publication of JPS5548707B2 publication Critical patent/JPS5548707B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP12946675A 1975-10-28 1975-10-28 Production of semiconductor device Granted JPS5253676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12946675A JPS5253676A (en) 1975-10-28 1975-10-28 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12946675A JPS5253676A (en) 1975-10-28 1975-10-28 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5253676A true JPS5253676A (en) 1977-04-30
JPS5548707B2 JPS5548707B2 (cs) 1980-12-08

Family

ID=15010177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12946675A Granted JPS5253676A (en) 1975-10-28 1975-10-28 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5253676A (cs)

Also Published As

Publication number Publication date
JPS5548707B2 (cs) 1980-12-08

Similar Documents

Publication Publication Date Title
JPS5253658A (en) Method of introducing impurity into semiconductor
JPS5253676A (en) Production of semiconductor device
JPS53111283A (en) Compound semiconductor device and production of the same
JPS5235980A (en) Manufacturing method of semiconductor device
JPS5279654A (en) Production of semiconductor device
JPS538076A (en) Production of mis semiconductor device
JPS5225582A (en) Production method of semiconductor device
JPS5215269A (en) Method of manufacturing semiconductor pellets
JPS5247687A (en) Process for production of mis type semiconductor device
JPS5244579A (en) Process for production of mos type semiconductor device
JPS5240070A (en) Process for production of semiconductor device
JPS5247675A (en) Process for production of semiconductor device
JPS5320775A (en) Production of semiconductor device
JPS5217768A (en) Production method of semi-conductor device
JPS5282078A (en) Production of mos transistor
JPS51120677A (en) Semiconductor device manufacturing method
JPS52123878A (en) Mos type semiconductor device and its production process
JPS5245884A (en) Process for production of semiconductor device
JPS5265682A (en) Semiconductor device
JPS5247685A (en) Process for production of mos type semiconductor device
JPS51112266A (en) Semiconductor device production method
JPS5376770A (en) Production of insulated gate field effect transistor
JPS51140493A (en) Method of fabricating mis semiconductor device
JPS5242375A (en) Process for production of semiconductor device
JPS51148379A (en) Manufacturing method of semiconductor device