JPS5245283A - Manufacturing method of field effect transistor of silicon gate type - Google Patents
Manufacturing method of field effect transistor of silicon gate typeInfo
- Publication number
- JPS5245283A JPS5245283A JP8499476A JP8499476A JPS5245283A JP S5245283 A JPS5245283 A JP S5245283A JP 8499476 A JP8499476 A JP 8499476A JP 8499476 A JP8499476 A JP 8499476A JP S5245283 A JPS5245283 A JP S5245283A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- field effect
- effect transistor
- gate type
- silicon gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8499476A JPS5245283A (en) | 1976-07-19 | 1976-07-19 | Manufacturing method of field effect transistor of silicon gate type |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8499476A JPS5245283A (en) | 1976-07-19 | 1976-07-19 | Manufacturing method of field effect transistor of silicon gate type |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP46026671A Division JPS5147311B1 (enrdf_load_html_response) | 1971-04-26 | 1971-04-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5245283A true JPS5245283A (en) | 1977-04-09 |
JPS5249313B2 JPS5249313B2 (enrdf_load_html_response) | 1977-12-16 |
Family
ID=13846175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8499476A Granted JPS5245283A (en) | 1976-07-19 | 1976-07-19 | Manufacturing method of field effect transistor of silicon gate type |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5245283A (enrdf_load_html_response) |
-
1976
- 1976-07-19 JP JP8499476A patent/JPS5245283A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5249313B2 (enrdf_load_html_response) | 1977-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5382179A (en) | Field effect transistor | |
JPS5253673A (en) | Device and production for semiconductor | |
JPS52115663A (en) | Semiconductor device | |
JPS5245283A (en) | Manufacturing method of field effect transistor of silicon gate type | |
JPS5245282A (en) | Manufacturing method of field effect transistor of silicon gate type | |
JPS52127181A (en) | Insulated gate type filed effect transistor | |
JPS538072A (en) | Semiconductor device | |
JPS5372470A (en) | Semiconductor device | |
JPS53979A (en) | Preparation of semiconductor device | |
JPS5365079A (en) | Semiconductor device | |
JPS5347781A (en) | Production of silicon gate semiconductor device | |
JPS5759387A (en) | Semiconductor storage device | |
JPS5245285A (en) | Manufacturing method of field effect transistor of silicon gate type | |
JPS5321582A (en) | Mos type semiconductor device | |
JPS52100875A (en) | Mos transistor | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5384690A (en) | Field effect transistor | |
JPS52147983A (en) | Insulation gate type semiconductor device | |
JPS52136582A (en) | Mos type semiconductor device | |
JPS53100779A (en) | Production of insulated gate type semiconductor device | |
JPS5359377A (en) | Insulating gate type electric field effect semiconductor unit and itsproduction | |
JPS5317284A (en) | Production of semiconductor device | |
JPS52128079A (en) | Vertical field effect transistor | |
JPS539480A (en) | Semiconductor device | |
JPS51147272A (en) | Manufacturing process of mis-type field effect transistor |