JPS523392A - Hetero juntion diode laser and method of producing same - Google Patents

Hetero juntion diode laser and method of producing same

Info

Publication number
JPS523392A
JPS523392A JP7091576A JP7091576A JPS523392A JP S523392 A JPS523392 A JP S523392A JP 7091576 A JP7091576 A JP 7091576A JP 7091576 A JP7091576 A JP 7091576A JP S523392 A JPS523392 A JP S523392A
Authority
JP
Japan
Prior art keywords
juntion
hetero
diode laser
producing same
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7091576A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5653237B2 (enExample
Inventor
Dei Baannamu Robaato
Aaru Shifurusu Donarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/589,277 external-priority patent/US4033796A/en
Priority claimed from US05/589,120 external-priority patent/US3978428A/en
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JPS523392A publication Critical patent/JPS523392A/ja
Publication of JPS5653237B2 publication Critical patent/JPS5653237B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7091576A 1975-06-23 1976-06-16 Hetero juntion diode laser and method of producing same Granted JPS523392A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/589,277 US4033796A (en) 1975-06-23 1975-06-23 Method of making buried-heterostructure diode injection laser
US05/589,120 US3978428A (en) 1975-06-23 1975-06-23 Buried-heterostructure diode injection laser

Publications (2)

Publication Number Publication Date
JPS523392A true JPS523392A (en) 1977-01-11
JPS5653237B2 JPS5653237B2 (enExample) 1981-12-17

Family

ID=27080453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7091576A Granted JPS523392A (en) 1975-06-23 1976-06-16 Hetero juntion diode laser and method of producing same

Country Status (7)

Country Link
JP (1) JPS523392A (enExample)
AU (1) AU501061B2 (enExample)
CA (1) CA1065460A (enExample)
DE (1) DE2626775C2 (enExample)
FR (1) FR2315785A1 (enExample)
GB (1) GB1546729A (enExample)
NL (1) NL7606798A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234686A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Double hetero junction type semiconductor laser element and its manufa cturing process
JPS56138030U (enExample) * 1980-03-18 1981-10-19
JPS56161688A (en) * 1980-05-16 1981-12-12 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5791574A (en) * 1980-11-28 1982-06-07 Nec Corp Light emitting diode
JPS5792880A (en) * 1980-12-02 1982-06-09 Toshiba Corp Light emitting diode
JPS58225683A (ja) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp 半導体レーザの製造方法
US4675710A (en) * 1981-03-31 1987-06-23 Fujitsu Limited Light emitting semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
DE2757470A1 (de) * 1977-12-22 1979-07-05 Siemens Ag Verfahren zum herstellen einer halbleiteranordnung
CA1127282A (en) * 1978-05-22 1982-07-06 Takashi Sugino Semiconductor laser and method of making the same
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
JPS599990A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
JP2553580B2 (ja) * 1987-08-19 1996-11-13 三菱電機株式会社 半導体レ−ザ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859178A (en) * 1955-12-19 1958-11-04 Exxon Research Engineering Co Method of lubricating bearings
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234686A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Double hetero junction type semiconductor laser element and its manufa cturing process
JPS56138030U (enExample) * 1980-03-18 1981-10-19
JPS56161688A (en) * 1980-05-16 1981-12-12 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5791574A (en) * 1980-11-28 1982-06-07 Nec Corp Light emitting diode
JPS5792880A (en) * 1980-12-02 1982-06-09 Toshiba Corp Light emitting diode
US4675710A (en) * 1981-03-31 1987-06-23 Fujitsu Limited Light emitting semiconductor device
JPS58225683A (ja) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp 半導体レーザの製造方法

Also Published As

Publication number Publication date
AU1521076A (en) 1978-01-05
NL7606798A (nl) 1976-12-27
FR2315785A1 (fr) 1977-01-21
DE2626775C2 (de) 1983-04-21
FR2315785B1 (enExample) 1983-03-25
AU501061B2 (en) 1979-06-07
GB1546729A (en) 1979-05-31
JPS5653237B2 (enExample) 1981-12-17
CA1065460A (en) 1979-10-30
DE2626775A1 (de) 1976-12-30

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