JPS5653237B2 - - Google Patents
Info
- Publication number
- JPS5653237B2 JPS5653237B2 JP7091576A JP7091576A JPS5653237B2 JP S5653237 B2 JPS5653237 B2 JP S5653237B2 JP 7091576 A JP7091576 A JP 7091576A JP 7091576 A JP7091576 A JP 7091576A JP S5653237 B2 JPS5653237 B2 JP S5653237B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/589,277 US4033796A (en) | 1975-06-23 | 1975-06-23 | Method of making buried-heterostructure diode injection laser |
| US05/589,120 US3978428A (en) | 1975-06-23 | 1975-06-23 | Buried-heterostructure diode injection laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS523392A JPS523392A (en) | 1977-01-11 |
| JPS5653237B2 true JPS5653237B2 (enExample) | 1981-12-17 |
Family
ID=27080453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7091576A Granted JPS523392A (en) | 1975-06-23 | 1976-06-16 | Hetero juntion diode laser and method of producing same |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS523392A (enExample) |
| AU (1) | AU501061B2 (enExample) |
| CA (1) | CA1065460A (enExample) |
| DE (1) | DE2626775C2 (enExample) |
| FR (1) | FR2315785A1 (enExample) |
| GB (1) | GB1546729A (enExample) |
| NL (1) | NL7606798A (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5234686A (en) * | 1975-09-10 | 1977-03-16 | Sumitomo Electric Ind Ltd | Double hetero junction type semiconductor laser element and its manufa cturing process |
| GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
| US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
| DE2757470A1 (de) * | 1977-12-22 | 1979-07-05 | Siemens Ag | Verfahren zum herstellen einer halbleiteranordnung |
| CA1127282A (en) * | 1978-05-22 | 1982-07-06 | Takashi Sugino | Semiconductor laser and method of making the same |
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| JPS55158691A (en) * | 1979-05-30 | 1980-12-10 | Sumitomo Electric Ind Ltd | Semiconductor light emitting device manufacture thereof |
| JPS56161688A (en) * | 1980-05-16 | 1981-12-12 | Matsushita Electric Ind Co Ltd | Semiconductor laser |
| JPS5910039Y2 (ja) * | 1980-03-18 | 1984-03-29 | 大日本印刷株式会社 | 商品展示函 |
| JPS5723292A (en) * | 1980-07-16 | 1982-02-06 | Sony Corp | Semiconductor laser device and manufacture thereof |
| JPS5763885A (en) * | 1980-10-06 | 1982-04-17 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS5791574A (en) * | 1980-11-28 | 1982-06-07 | Nec Corp | Light emitting diode |
| JPS5792880A (en) * | 1980-12-02 | 1982-06-09 | Toshiba Corp | Light emitting diode |
| JPS57162484A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor luminous device |
| JPS58225683A (ja) * | 1982-06-22 | 1983-12-27 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
| GB2123604B (en) * | 1982-06-29 | 1985-12-18 | Standard Telephones Cables Ltd | Injection laser manufacture |
| JPS599990A (ja) * | 1982-07-07 | 1984-01-19 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
| JPS6042890A (ja) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | 面発光形半導体レ−ザ及びその製造方法 |
| JP2553580B2 (ja) * | 1987-08-19 | 1996-11-13 | 三菱電機株式会社 | 半導体レ−ザ装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2859178A (en) * | 1955-12-19 | 1958-11-04 | Exxon Research Engineering Co | Method of lubricating bearings |
| GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
| IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
| JPS51114887A (en) * | 1975-04-01 | 1976-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
-
1976
- 1976-05-14 CA CA252,590A patent/CA1065460A/en not_active Expired
- 1976-05-26 FR FR7615955A patent/FR2315785A1/fr active Granted
- 1976-06-15 DE DE2626775A patent/DE2626775C2/de not_active Expired
- 1976-06-16 JP JP7091576A patent/JPS523392A/ja active Granted
- 1976-06-18 GB GB25356/76A patent/GB1546729A/en not_active Expired
- 1976-06-22 NL NL7606798A patent/NL7606798A/xx not_active Application Discontinuation
- 1976-06-23 AU AU15210/76A patent/AU501061B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AU1521076A (en) | 1978-01-05 |
| NL7606798A (nl) | 1976-12-27 |
| FR2315785A1 (fr) | 1977-01-21 |
| DE2626775C2 (de) | 1983-04-21 |
| JPS523392A (en) | 1977-01-11 |
| FR2315785B1 (enExample) | 1983-03-25 |
| AU501061B2 (en) | 1979-06-07 |
| GB1546729A (en) | 1979-05-31 |
| CA1065460A (en) | 1979-10-30 |
| DE2626775A1 (de) | 1976-12-30 |