JPS5227356A - Manufacturing process of silicon epitaxial wafer - Google Patents
Manufacturing process of silicon epitaxial waferInfo
- Publication number
- JPS5227356A JPS5227356A JP10370875A JP10370875A JPS5227356A JP S5227356 A JPS5227356 A JP S5227356A JP 10370875 A JP10370875 A JP 10370875A JP 10370875 A JP10370875 A JP 10370875A JP S5227356 A JPS5227356 A JP S5227356A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing process
- epitaxial wafer
- silicon epitaxial
- wafer
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10370875A JPS5227356A (en) | 1975-08-27 | 1975-08-27 | Manufacturing process of silicon epitaxial wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10370875A JPS5227356A (en) | 1975-08-27 | 1975-08-27 | Manufacturing process of silicon epitaxial wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5227356A true JPS5227356A (en) | 1977-03-01 |
Family
ID=14361223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10370875A Pending JPS5227356A (en) | 1975-08-27 | 1975-08-27 | Manufacturing process of silicon epitaxial wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5227356A (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165606A (en) * | 1979-06-11 | 1980-12-24 | Matsushita Electric Ind Co Ltd | Magnetic roll and manufacture thereof |
JPS5640207A (en) * | 1979-09-10 | 1981-04-16 | Tdk Corp | Magnetizing distribution control method for rare earth cobalt magnet |
JPS56118302A (en) * | 1980-02-15 | 1981-09-17 | Statni Vyzkumny Ustav Material | Method of manufacturing anisotropic permanent magnet |
JPS5791231U (ja) * | 1980-11-25 | 1982-06-04 | ||
JPS58127421A (ja) * | 1982-01-25 | 1983-07-29 | Tsuneo Ikegami | 増幅素子並列運転回路 |
JPS59119702A (ja) * | 1982-12-27 | 1984-07-11 | Toshiba Corp | 焼結磁石の製造方法 |
JPS60160115A (ja) * | 1984-01-30 | 1985-08-21 | Toyo Electric Mfg Co Ltd | 埋込み層を有する半導体基板の製作方法 |
JPH02139908A (ja) * | 1988-11-18 | 1990-05-29 | Shin Etsu Chem Co Ltd | 極異方性希土類磁石の製造方法 |
JPH02103770U (ja) * | 1981-05-21 | 1990-08-17 | ||
JPH03145718A (ja) * | 1989-10-31 | 1991-06-20 | Matsushita Electric Ind Co Ltd | 気相エピタキシャル成長方法 |
JPH06112512A (ja) * | 1992-09-24 | 1994-04-22 | Rohm Co Ltd | 半導体デバイス |
JP2013504217A (ja) * | 2009-09-03 | 2013-02-04 | ビシャイ‐シリコニックス | 半導体デバイス形成方法 |
-
1975
- 1975-08-27 JP JP10370875A patent/JPS5227356A/ja active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165606A (en) * | 1979-06-11 | 1980-12-24 | Matsushita Electric Ind Co Ltd | Magnetic roll and manufacture thereof |
JPS598044B2 (ja) * | 1979-09-10 | 1984-02-22 | ティーディーケイ株式会社 | 希土類コバルト磁石の磁化分布制御方法 |
JPS5640207A (en) * | 1979-09-10 | 1981-04-16 | Tdk Corp | Magnetizing distribution control method for rare earth cobalt magnet |
JPS56118302A (en) * | 1980-02-15 | 1981-09-17 | Statni Vyzkumny Ustav Material | Method of manufacturing anisotropic permanent magnet |
JPS5791231U (ja) * | 1980-11-25 | 1982-06-04 | ||
JPH02103770U (ja) * | 1981-05-21 | 1990-08-17 | ||
JPS58127421A (ja) * | 1982-01-25 | 1983-07-29 | Tsuneo Ikegami | 増幅素子並列運転回路 |
JPS59119702A (ja) * | 1982-12-27 | 1984-07-11 | Toshiba Corp | 焼結磁石の製造方法 |
JPS60160115A (ja) * | 1984-01-30 | 1985-08-21 | Toyo Electric Mfg Co Ltd | 埋込み層を有する半導体基板の製作方法 |
JPH02139908A (ja) * | 1988-11-18 | 1990-05-29 | Shin Etsu Chem Co Ltd | 極異方性希土類磁石の製造方法 |
JPH0552045B2 (ja) * | 1988-11-18 | 1993-08-04 | Shinetsu Chem Ind Co | |
JPH03145718A (ja) * | 1989-10-31 | 1991-06-20 | Matsushita Electric Ind Co Ltd | 気相エピタキシャル成長方法 |
JPH06112512A (ja) * | 1992-09-24 | 1994-04-22 | Rohm Co Ltd | 半導体デバイス |
JP2013504217A (ja) * | 2009-09-03 | 2013-02-04 | ビシャイ‐シリコニックス | 半導体デバイス形成方法 |
US10546750B2 (en) | 2009-09-03 | 2020-01-28 | Vishay-Siliconix | System and method for substrate wafer back side and edge cross section seals |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5227356A (en) | Manufacturing process of silicon epitaxial wafer | |
JPS55165674A (en) | Semiconductor device | |
JPS5363993A (en) | Production of semiconductor device | |
JPS5331964A (en) | Production of semiconductor substrates | |
JPS6446937A (en) | Manufacture of semiconductor device | |
JPS5299085A (en) | Production of semiconductor device | |
JPS5269571A (en) | Thermal oxidation method for semiconductor wafer | |
JPS52131462A (en) | Manufacture of semiconductor device | |
JPS5458381A (en) | Manufacture for semiconductor device | |
JPS51113461A (en) | A method for manufacturing semiconductor devices | |
JPS5244169A (en) | Process for production of semiconductor device | |
JPS51145267A (en) | Manufacture of semiconductor device | |
JPS526080A (en) | Production method of semiconductor wafer | |
JPS52147980A (en) | Manufacture of semiconductor device | |
JPS5245290A (en) | Integrated circuit of semiconductor and method for its fabrication | |
JPS5384554A (en) | Manufacture for semiconductor device | |
JPS5365086A (en) | Production of semiconductor device | |
JPS52154344A (en) | Impurity diffusion method | |
JPS5380184A (en) | Manufacture of semiconductor device | |
JPS53101977A (en) | Diffusion method of inpurity to semiconductor substrate | |
JPS5384690A (en) | Field effect transistor | |
JPS5230379A (en) | Process of semiconductor device | |
JPS5335375A (en) | Heating method | |
JPS5372482A (en) | Manufacture for semiconductor device | |
JPS52129288A (en) | Production of semiconductor integrated citrcuit |