JPS5217815A - Substrate and material using the same - Google Patents

Substrate and material using the same

Info

Publication number
JPS5217815A
JPS5217815A JP9284175A JP9284175A JPS5217815A JP S5217815 A JPS5217815 A JP S5217815A JP 9284175 A JP9284175 A JP 9284175A JP 9284175 A JP9284175 A JP 9284175A JP S5217815 A JPS5217815 A JP S5217815A
Authority
JP
Japan
Prior art keywords
substrate
same
film
circumference
obtaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9284175A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5624255B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masamichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP9284175A priority Critical patent/JPS5217815A/ja
Priority to US05/710,049 priority patent/US4111698A/en
Publication of JPS5217815A publication Critical patent/JPS5217815A/ja
Publication of JPS5624255B2 publication Critical patent/JPS5624255B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
    • G03C1/765—Photosensitive materials characterised by the base or auxiliary layers characterised by the shape of the base, e.g. arrangement of perforations, jags
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136—Coating process making radiation sensitive element

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP9284175A 1975-07-30 1975-07-30 Substrate and material using the same Granted JPS5217815A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9284175A JPS5217815A (en) 1975-07-30 1975-07-30 Substrate and material using the same
US05/710,049 US4111698A (en) 1975-07-30 1976-07-30 Spin-coated photosensitive silver halide photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9284175A JPS5217815A (en) 1975-07-30 1975-07-30 Substrate and material using the same

Publications (2)

Publication Number Publication Date
JPS5217815A true JPS5217815A (en) 1977-02-10
JPS5624255B2 JPS5624255B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-06-04

Family

ID=14065648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9284175A Granted JPS5217815A (en) 1975-07-30 1975-07-30 Substrate and material using the same

Country Status (2)

Country Link
US (1) US4111698A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5217815A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562736A (en) * 1978-11-01 1980-05-12 Toshiba Corp Mask material for preparation of semiconductor device
JPS55165638A (en) * 1979-06-13 1980-12-24 Nec Kyushu Ltd Semiconductor wafer
JPS5823330U (ja) * 1981-08-07 1983-02-14 三菱電機株式会社 フオトマスク
JPS62179748U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1987-04-23 1987-11-14
JP2005333124A (ja) * 2004-04-22 2005-12-02 Asahi Glass Co Ltd 反射型マスク用低膨張硝子基板および反射型マスク
JP2012256038A (ja) * 2011-05-19 2012-12-27 Hoya Corp マスクブランク用基板、マスクブランク、反射型マスクブランク、転写マスク、及び反射型マスク、並びにそれらの製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4267208A (en) * 1979-07-30 1981-05-12 Ireland Jack W Coating of optical lens for blocking purposes
EP0105374B1 (en) * 1982-02-05 1989-04-19 Matsushita Electric Industrial Co., Ltd. Optical recording/reproduction disc
DE3435177A1 (de) * 1983-09-26 1985-04-11 Canon K.K., Tokio/Tokyo Maske fuer lithographische zwecke
US5112707A (en) * 1983-09-26 1992-05-12 Canon Kabushiki Kaisha Mask structure for lithography
DE3682985D1 (de) * 1985-08-30 1992-01-30 Sharp Kk Verfahren zur herstellung eines optischen verzeichniselementes.
US5294257A (en) * 1991-10-28 1994-03-15 International Business Machines Corporation Edge masking spin tool
US6707152B1 (en) * 1999-04-16 2004-03-16 Micron Technology, Inc. Semiconductor device, electrical conductor system, and method of making
US6842409B2 (en) * 2001-02-21 2005-01-11 Scratch-Less Disc Industries, Llc Optical disc and method of protecting same
US6680898B2 (en) * 2001-02-21 2004-01-20 Todd J. Kuchman Optical disc and method of protecting same
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
WO2005103821A1 (en) * 2004-04-22 2005-11-03 Asahi Glass Company, Limited Low-expansion glass substrate for a reflective mask and reflective mask
US8053145B2 (en) * 2006-05-30 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing holographic recording medium and method for manufacturing semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE517517C (de) * 1927-11-14 1931-02-16 Leopold Rado Metallfilm
US3314816A (en) * 1962-08-02 1967-04-18 Brady W H Co Method of making photographically accurate prints
FR2193864B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-07-31 1974-12-27 Rhone Poulenc Sa

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562736A (en) * 1978-11-01 1980-05-12 Toshiba Corp Mask material for preparation of semiconductor device
JPS55165638A (en) * 1979-06-13 1980-12-24 Nec Kyushu Ltd Semiconductor wafer
JPS5823330U (ja) * 1981-08-07 1983-02-14 三菱電機株式会社 フオトマスク
JPS62179748U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1987-04-23 1987-11-14
JP2005333124A (ja) * 2004-04-22 2005-12-02 Asahi Glass Co Ltd 反射型マスク用低膨張硝子基板および反射型マスク
JP2012256038A (ja) * 2011-05-19 2012-12-27 Hoya Corp マスクブランク用基板、マスクブランク、反射型マスクブランク、転写マスク、及び反射型マスク、並びにそれらの製造方法

Also Published As

Publication number Publication date
JPS5624255B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-06-04
US4111698A (en) 1978-09-05

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