JPS52144287A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS52144287A
JPS52144287A JP6061176A JP6061176A JPS52144287A JP S52144287 A JPS52144287 A JP S52144287A JP 6061176 A JP6061176 A JP 6061176A JP 6061176 A JP6061176 A JP 6061176A JP S52144287 A JPS52144287 A JP S52144287A
Authority
JP
Japan
Prior art keywords
preparation
semiconductor device
mos
mask
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6061176A
Other languages
Japanese (ja)
Other versions
JPS5915177B2 (en
Inventor
Kazuo Sato
Hideo Tone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51060611A priority Critical patent/JPS5915177B2/en
Publication of JPS52144287A publication Critical patent/JPS52144287A/en
Publication of JPS5915177B2 publication Critical patent/JPS5915177B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: In producing the C - MOS,IC, it is intended to prevent impurities from percolating out to an active zone and control positively the depth of a peak value of an impurity concentration by using first and second substance layers providing an oxide film and a mask for injecting ions on a semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP51060611A 1976-05-27 1976-05-27 Manufacturing method of semiconductor device Expired JPS5915177B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51060611A JPS5915177B2 (en) 1976-05-27 1976-05-27 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51060611A JPS5915177B2 (en) 1976-05-27 1976-05-27 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS52144287A true JPS52144287A (en) 1977-12-01
JPS5915177B2 JPS5915177B2 (en) 1984-04-07

Family

ID=13147223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51060611A Expired JPS5915177B2 (en) 1976-05-27 1976-05-27 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5915177B2 (en)

Also Published As

Publication number Publication date
JPS5915177B2 (en) 1984-04-07

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