JPS52143778A - Input protection circuit - Google Patents

Input protection circuit

Info

Publication number
JPS52143778A
JPS52143778A JP6041176A JP6041176A JPS52143778A JP S52143778 A JPS52143778 A JP S52143778A JP 6041176 A JP6041176 A JP 6041176A JP 6041176 A JP6041176 A JP 6041176A JP S52143778 A JPS52143778 A JP S52143778A
Authority
JP
Japan
Prior art keywords
protection circuit
input protection
widening
langth
prolonging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6041176A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Koike
Yasuo Nakada
Soichiro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6041176A priority Critical patent/JPS52143778A/en
Publication of JPS52143778A publication Critical patent/JPS52143778A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Abstract

PURPOSE:To protect gate oxide films and PN junctions by widening the area of the portions of diffusion layers close to contact holes connecting to external input terminals and widening the mutual spacing of the opposing diffused layers or making their surroundings in corrugated form thereby prolonging their peripheral langth.
JP6041176A 1976-05-25 1976-05-25 Input protection circuit Pending JPS52143778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6041176A JPS52143778A (en) 1976-05-25 1976-05-25 Input protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6041176A JPS52143778A (en) 1976-05-25 1976-05-25 Input protection circuit

Publications (1)

Publication Number Publication Date
JPS52143778A true JPS52143778A (en) 1977-11-30

Family

ID=13141398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6041176A Pending JPS52143778A (en) 1976-05-25 1976-05-25 Input protection circuit

Country Status (1)

Country Link
JP (1) JPS52143778A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586159A (en) * 1978-12-22 1980-06-28 Fujitsu Ltd Protective circuit for mos semiconductor device
JPS5864059A (en) * 1981-10-14 1983-04-16 Hitachi Ltd High withstand resistance element
JPS5886773A (en) * 1981-11-19 1983-05-24 Nec Corp Output protecting circuit
JPS6063954A (en) * 1983-09-16 1985-04-12 Sanyo Electric Co Ltd Resistor incorporated in semiconductor ic

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586159A (en) * 1978-12-22 1980-06-28 Fujitsu Ltd Protective circuit for mos semiconductor device
JPS6237822B2 (en) * 1978-12-22 1987-08-14 Fujitsu Ltd
JPS5864059A (en) * 1981-10-14 1983-04-16 Hitachi Ltd High withstand resistance element
EP0077072A2 (en) * 1981-10-14 1983-04-20 Hitachi, Ltd. High voltage resistance element
JPH0324788B2 (en) * 1981-10-14 1991-04-04 Hitachi Ltd
JPS5886773A (en) * 1981-11-19 1983-05-24 Nec Corp Output protecting circuit
JPH0666468B2 (en) * 1981-11-19 1994-08-24 日本電気株式会社 Output protection circuit
JPS6063954A (en) * 1983-09-16 1985-04-12 Sanyo Electric Co Ltd Resistor incorporated in semiconductor ic
JPH0228268B2 (en) * 1983-09-16 1990-06-22 Sanyo Electric Co

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