Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP5689176ApriorityCriticalpatent/JPS52139367A/en
Publication of JPS52139367ApublicationCriticalpatent/JPS52139367A/en
PURPOSE: To form good ohmic contact by ion implanting more than one structural components and making heat treatment in the case of metals or alloys forming ohmic contact beforehand within a semiconductor.
COPYRIGHT: (C)1977,JPO&Japio
JP5689176A1976-05-171976-05-17Production of semiconductor device
PendingJPS52139367A
(en)