JPS52115783A - Liquid phase epitaxial growth - Google Patents

Liquid phase epitaxial growth

Info

Publication number
JPS52115783A
JPS52115783A JP3293076A JP3293076A JPS52115783A JP S52115783 A JPS52115783 A JP S52115783A JP 3293076 A JP3293076 A JP 3293076A JP 3293076 A JP3293076 A JP 3293076A JP S52115783 A JPS52115783 A JP S52115783A
Authority
JP
Japan
Prior art keywords
liquid phase
epitaxial growth
phase epitaxial
contacting
give
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3293076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS564517B2 (enrdf_load_stackoverflow
Inventor
Shinichi Akai
Hideki Mori
Takashi Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3293076A priority Critical patent/JPS52115783A/ja
Publication of JPS52115783A publication Critical patent/JPS52115783A/ja
Publication of JPS564517B2 publication Critical patent/JPS564517B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3293076A 1976-03-24 1976-03-24 Liquid phase epitaxial growth Granted JPS52115783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3293076A JPS52115783A (en) 1976-03-24 1976-03-24 Liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3293076A JPS52115783A (en) 1976-03-24 1976-03-24 Liquid phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS52115783A true JPS52115783A (en) 1977-09-28
JPS564517B2 JPS564517B2 (enrdf_load_stackoverflow) 1981-01-30

Family

ID=12372627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3293076A Granted JPS52115783A (en) 1976-03-24 1976-03-24 Liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS52115783A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4972182A (enrdf_load_stackoverflow) * 1972-09-28 1974-07-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4972182A (enrdf_load_stackoverflow) * 1972-09-28 1974-07-12

Also Published As

Publication number Publication date
JPS564517B2 (enrdf_load_stackoverflow) 1981-01-30

Similar Documents

Publication Publication Date Title
JPS52123172A (en) Spin coating method
JPS52115783A (en) Liquid phase epitaxial growth
JPS52106380A (en) Liquid phase epitaxial growth of crystal
JPS52106673A (en) Crystal growing method and device thereof
JPS52115784A (en) Liquid phase epitaxial growth
JPS5336182A (en) Thin semiconductor single crystal film forming insulation substrate
JPS5211860A (en) Liquid phase epitaxial device
JPS5231665A (en) Growing method of semiconductor crystal
JPS547861A (en) Liquid phase epitaxial growth method
JPS52117549A (en) Film thickness control method for semiconductor film substance
JPS51124941A (en) A device for displaying by liquid crystal
JPS5288276A (en) Liquid-phase epitaxial growth
JPS5322382A (en) Production of dielectric isolating substrate
JPS51121258A (en) Liquid phase growth method for semiconductor thin films
JPS51111057A (en) Crystal growing device
JPS5364466A (en) Semiconductor crystal growth apparatus
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS52128889A (en) Crystal growth method in liquid phase
JPS53147684A (en) Method of and apparatus for liquid phase epitaxial growth
JPS5226847A (en) Layer forming method for liquid crystal molecule orientation and devic e therefor
JPS5329750A (en) Liquid crystal display device
JPS5379774A (en) Growth method in liquid phase
JPS5381487A (en) Method and apparatus for liquid phase epitaxial growth
JPS52155058A (en) Film formation method
JPS5371583A (en) Semiconductor device