JPS52113157A - Process for growing gallium arsenide and method of making semiconductor devices - Google Patents

Process for growing gallium arsenide and method of making semiconductor devices

Info

Publication number
JPS52113157A
JPS52113157A JP1029777A JP1029777A JPS52113157A JP S52113157 A JPS52113157 A JP S52113157A JP 1029777 A JP1029777 A JP 1029777A JP 1029777 A JP1029777 A JP 1029777A JP S52113157 A JPS52113157 A JP S52113157A
Authority
JP
Japan
Prior art keywords
gallium arsenide
semiconductor devices
making semiconductor
growing gallium
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1029777A
Other languages
English (en)
Japanese (ja)
Inventor
Horan Rasutsuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS52113157A publication Critical patent/JPS52113157A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP1029777A 1976-02-06 1977-02-03 Process for growing gallium arsenide and method of making semiconductor devices Pending JPS52113157A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7603259A FR2356271A1 (fr) 1976-02-06 1976-02-06 Croissance acceleree en phase vapeur

Publications (1)

Publication Number Publication Date
JPS52113157A true JPS52113157A (en) 1977-09-22

Family

ID=9168824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1029777A Pending JPS52113157A (en) 1976-02-06 1977-02-03 Process for growing gallium arsenide and method of making semiconductor devices

Country Status (6)

Country Link
US (1) US4172756A (https=)
JP (1) JPS52113157A (https=)
CA (1) CA1086610A (https=)
DE (1) DE2703518C3 (https=)
FR (1) FR2356271A1 (https=)
GB (1) GB1570856A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
JPS56138917A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Vapor phase epitaxial growth
FR2581711B1 (fr) * 1985-05-13 1987-11-20 Labo Electronique Physique Dispositif pour la regulation, l'interruption ou la commutation de fluides
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
US5348911A (en) * 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
DE3721638A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Materialsparendes verfahren zur herstellung von mischkristallen
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film
US4985281A (en) * 1988-08-22 1991-01-15 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition
US9834860B2 (en) * 2009-10-14 2017-12-05 Alta Devices, Inc. Method of high growth rate deposition for group III/V materials
US11393683B2 (en) * 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
US3471324A (en) * 1966-12-23 1969-10-07 Texas Instruments Inc Epitaxial gallium arsenide
DE2100692A1 (de) * 1970-01-09 1971-07-15 Hitachi Ltd Verfahren zum Herstellen einer epitaxisch gewachsenen Schicht eines GaAs tief 1 χ P tief χ Halbleitermaterial
JPS4834798A (https=) * 1971-09-06 1973-05-22
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
UST951008I4 (https=) 1975-11-07 1976-10-05

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
J.CRYST.GROUTH#V11=1971 *
J.CRYST.GROVTH#V17=1972 *
JAPAN.J.APPL.PHYS.#V10=1971 *

Also Published As

Publication number Publication date
FR2356271A1 (fr) 1978-01-20
CA1086610A (en) 1980-09-30
FR2356271B1 (https=) 1978-11-17
US4172756A (en) 1979-10-30
GB1570856A (en) 1980-07-09
DE2703518C3 (de) 1980-10-02
DE2703518A1 (de) 1977-08-11
DE2703518B2 (de) 1980-02-14

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