JPS52106683A - Method of bonding semiconductor disk - Google Patents

Method of bonding semiconductor disk

Info

Publication number
JPS52106683A
JPS52106683A JP2213677A JP2213677A JPS52106683A JP S52106683 A JPS52106683 A JP S52106683A JP 2213677 A JP2213677 A JP 2213677A JP 2213677 A JP2213677 A JP 2213677A JP S52106683 A JPS52106683 A JP S52106683A
Authority
JP
Japan
Prior art keywords
semiconductor disk
bonding semiconductor
bonding
disk
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2213677A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5641167B2 (enExample
Inventor
Shiyumitsuto Deiitoritsuhi
Maisunaa Buruuno
Ieruku Raato Haintsu
Reguraa Deiiteru
Fuosu Yurugen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of JPS52106683A publication Critical patent/JPS52106683A/ja
Publication of JPS5641167B2 publication Critical patent/JPS5641167B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
    • Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
    • Y10T156/1092—All laminae planar and face to face
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laminated Bodies (AREA)
JP2213677A 1976-03-01 1977-03-01 Method of bonding semiconductor disk Granted JPS52106683A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2608427A DE2608427C2 (de) 1976-03-01 1976-03-01 Verfahren zum Aufkitten von Halbleiterscheiben

Publications (2)

Publication Number Publication Date
JPS52106683A true JPS52106683A (en) 1977-09-07
JPS5641167B2 JPS5641167B2 (enExample) 1981-09-26

Family

ID=5971267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2213677A Granted JPS52106683A (en) 1976-03-01 1977-03-01 Method of bonding semiconductor disk

Country Status (10)

Country Link
US (1) US4300965A (enExample)
JP (1) JPS52106683A (enExample)
BE (1) BE851892A (enExample)
CA (1) CA1075579A (enExample)
DE (1) DE2608427C2 (enExample)
FR (1) FR2343330A1 (enExample)
GB (1) GB1505488A (enExample)
IT (1) IT1083481B (enExample)
NL (1) NL7614209A (enExample)
SE (1) SE7702273L (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2809274A1 (de) * 1978-03-03 1979-09-13 Wacker Chemitronic Verfahren zur vergleichmaessigung des polierabtrages von scheiben beim polieren
US4517041A (en) * 1982-09-30 1985-05-14 Magnetic Peripherals Inc. Method for attaching a workpiece to a workpiece carrier
US4530138A (en) * 1982-09-30 1985-07-23 Westinghouse Electric Corp. Method of making a transducer assembly
DE3670178D1 (de) * 1986-08-13 1990-05-10 Toshiba Kawasaki Kk Apparat zum zusammenfuegen von halbleiterscheiben.
JP3537688B2 (ja) * 1998-11-24 2004-06-14 富士通株式会社 磁気ヘッドの加工方法
DE10052293A1 (de) * 2000-10-20 2002-04-25 B L E Lab Equipment Gmbh Verfahren zum Aufbringen eines Substrats

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1950468A (en) * 1930-04-18 1934-03-13 Nat Aniline & Chem Co Inc Alkyd resinous composition
US2394689A (en) * 1944-01-07 1946-02-12 American Viscose Corp Method of dyeing
US3335087A (en) * 1965-12-20 1967-08-08 Pennsalt Chemical Corp Method of stripping resins
US3452133A (en) * 1966-03-07 1969-06-24 Schjeldahl Co G T Annealing of metal-plastic laminates
US3475867A (en) * 1966-12-20 1969-11-04 Monsanto Co Processing of semiconductor wafers
US3449870A (en) * 1967-01-24 1969-06-17 Geoscience Instr Corp Method and apparatus for mounting thin elements
US3586559A (en) * 1968-07-01 1971-06-22 Rohr Corp Method of temporarily securing a workpiece to a workholder
JPS5121334B2 (enExample) * 1971-08-27 1976-07-01
DE2247067C3 (de) * 1972-09-26 1979-08-09 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen
US3888053A (en) * 1973-05-29 1975-06-10 Rca Corp Method of shaping semiconductor workpiece

Also Published As

Publication number Publication date
JPS5641167B2 (enExample) 1981-09-26
BE851892A (fr) 1977-08-29
DE2608427C2 (de) 1984-07-19
GB1505488A (en) 1978-03-30
FR2343330B1 (enExample) 1978-10-20
FR2343330A1 (fr) 1977-09-30
NL7614209A (nl) 1977-09-05
CA1075579A (en) 1980-04-15
IT1083481B (it) 1985-05-21
US4300965A (en) 1981-11-17
DE2608427A1 (de) 1977-09-08
SE7702273L (sv) 1977-09-02

Similar Documents

Publication Publication Date Title
JPS5331961A (en) Method of making semiconductor
JPS5210075A (en) Tape of connecting ganggbonding for semiconductor devices and method of making the same
JPS53146572A (en) Method of bonding disks
JPS52113686A (en) Method of producing semiconductor device
JPS52137276A (en) Method of producing semiconductor device
JPS5320771A (en) Method of manufacturing semiconductor element
JPS52114276A (en) Method of manufacturing semiconductor device
JPS52119083A (en) Method of producing semiconductor device
AU504549B2 (en) Method of manufacturing alight-emissive semiconductor device
JPS52106683A (en) Method of bonding semiconductor disk
JPS5210076A (en) Tape of connecting ganggbonding for semiconductor devices and method of making the same
JPS5448487A (en) Method of producing semiconductor
JPS52151653A (en) Method of bonding two types of metallic members
JPS52144768A (en) Method of connecting chip
JPS5334480A (en) Method of producing semiconductor element
JPS5299767A (en) Method of making semiconductor device
JPS5311572A (en) Method of making semiconductor device
JPS52122469A (en) Improved method of making semiconductor device
JPS5286066A (en) Method of manufacturing semiconductor mount
JPS5288766A (en) Method of forming bonding pad
JPS5296868A (en) Method of bonding wires
JPS5295061A (en) Bonding method
ZA772305B (en) Method of bonding
JPS5318386A (en) Method of manufactring semiconductor
JPS5384680A (en) Method of producing semiconductor