JPS51142992A - Semiconductor laser:crystal bring-up method - Google Patents

Semiconductor laser:crystal bring-up method

Info

Publication number
JPS51142992A
JPS51142992A JP6740275A JP6740275A JPS51142992A JP S51142992 A JPS51142992 A JP S51142992A JP 6740275 A JP6740275 A JP 6740275A JP 6740275 A JP6740275 A JP 6740275A JP S51142992 A JPS51142992 A JP S51142992A
Authority
JP
Japan
Prior art keywords
semiconductor laser
layer
crystal bring
crystal
bring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6740275A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5742212B2 (enrdf_load_stackoverflow
Inventor
Saburo Yamamoto
Kaneki Matsui
Akira Komuro
Yukio Kurata
Morichika Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6740275A priority Critical patent/JPS51142992A/ja
Publication of JPS51142992A publication Critical patent/JPS51142992A/ja
Publication of JPS5742212B2 publication Critical patent/JPS5742212B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP6740275A 1975-06-03 1975-06-03 Semiconductor laser:crystal bring-up method Granted JPS51142992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6740275A JPS51142992A (en) 1975-06-03 1975-06-03 Semiconductor laser:crystal bring-up method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6740275A JPS51142992A (en) 1975-06-03 1975-06-03 Semiconductor laser:crystal bring-up method

Publications (2)

Publication Number Publication Date
JPS51142992A true JPS51142992A (en) 1976-12-08
JPS5742212B2 JPS5742212B2 (enrdf_load_stackoverflow) 1982-09-07

Family

ID=13343908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6740275A Granted JPS51142992A (en) 1975-06-03 1975-06-03 Semiconductor laser:crystal bring-up method

Country Status (1)

Country Link
JP (1) JPS51142992A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5742212B2 (enrdf_load_stackoverflow) 1982-09-07

Similar Documents

Publication Publication Date Title
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS549592A (en) Luminous semiconductor element
JPS51142992A (en) Semiconductor laser:crystal bring-up method
JPS52143761A (en) Crystal growth method
JPS5228879A (en) Semiconductor device and method for its production
JPS51140199A (en) Crystal working process
JPS5440073A (en) Film forming method
JPS5215485A (en) Process for growth of ribbon crystals by lateral pulling
JPS5211860A (en) Liquid phase epitaxial device
JPS5358978A (en) Growing method for crystal
JPS52106673A (en) Crystal growing method and device thereof
JPS538083A (en) Production of semiconductor device
JPS51126047A (en) Growth device for semi-conductor crystals
JPS5277584A (en) Growing crystal
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5265184A (en) Eqipment for simultaneous sputtering at both surface
JPS5254385A (en) Production of semiconductor light emitting device
JPS5436192A (en) Manufacture for semiconductor
JPS5299067A (en) Semiconductor crystal multilayer continuous growing method
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS52155189A (en) Multiple layer crystal growth
JPS53105371A (en) Crystal growing method for potassium arsenide
JPS544567A (en) Growing apparatus of ion beam crystal
JPS5294069A (en) Process for preparing semi-conductor substrate
JPS5242367A (en) Method of preventing occurence of crystal defects of silicon wafers