JPS51140442A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS51140442A
JPS51140442A JP5423776A JP5423776A JPS51140442A JP S51140442 A JPS51140442 A JP S51140442A JP 5423776 A JP5423776 A JP 5423776A JP 5423776 A JP5423776 A JP 5423776A JP S51140442 A JPS51140442 A JP S51140442A
Authority
JP
Japan
Prior art keywords
memory circuit
memory
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5423776A
Other languages
English (en)
Japanese (ja)
Inventor
Koobin Rotsukuutsudo Jiyooji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of JPS51140442A publication Critical patent/JPS51140442A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP5423776A 1975-05-13 1976-05-12 Memory circuit Pending JPS51140442A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57714275A 1975-05-13 1975-05-13

Publications (1)

Publication Number Publication Date
JPS51140442A true JPS51140442A (en) 1976-12-03

Family

ID=24307446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5423776A Pending JPS51140442A (en) 1975-05-13 1976-05-12 Memory circuit

Country Status (6)

Country Link
JP (1) JPS51140442A (US07943777-20110517-C00090.png)
DE (1) DE2620749B2 (US07943777-20110517-C00090.png)
FR (1) FR2311382A1 (US07943777-20110517-C00090.png)
GB (1) GB1497210A (US07943777-20110517-C00090.png)
IT (1) IT1060445B (US07943777-20110517-C00090.png)
NL (1) NL7605024A (US07943777-20110517-C00090.png)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method
JPS56134387A (en) * 1979-11-01 1981-10-21 Texas Instruments Inc Semiconductor memory
JPS589286A (ja) * 1981-07-10 1983-01-19 Toshiba Corp 不揮発性半導体メモリ
JPS5817594A (ja) * 1981-07-23 1983-02-01 Seiko Epson Corp 半導体記憶装置
JPS58208990A (ja) * 1982-05-28 1983-12-05 Nec Corp 記憶装置
JPS6069898A (ja) * 1983-09-26 1985-04-20 Toshiba Corp 半導体記憶装置
JPS61184794A (ja) * 1985-02-13 1986-08-18 Toshiba Corp 半導体記憶装置
JPS6280899A (ja) * 1985-10-04 1987-04-14 Mitsubishi Electric Corp 半導体記憶装置
JPS63127496A (ja) * 1980-02-04 1988-05-31 テキサス　インスツルメンツ　インコ−ポレイテツド 低電力消費記憶装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099264A (en) * 1976-10-28 1978-07-04 Sperry Rand Corporation Non-destructive interrogation control circuit for a variable threshold FET memory
US4225807A (en) * 1977-07-13 1980-09-30 Sharp Kabushiki Kaisha Readout scheme of a matrix type thin-film EL display panel
US4305135A (en) * 1979-07-30 1981-12-08 International Business Machines Corp. Program controlled capacitive keyboard variable threshold sensing system
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
DE3153700C2 (US07943777-20110517-C00090.png) * 1980-02-04 1993-01-28 Texas Instruments Inc., Dallas, Tex., Us

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134387A (en) * 1979-11-01 1981-10-21 Texas Instruments Inc Semiconductor memory
JPS6348118B2 (US07943777-20110517-C00090.png) * 1979-11-01 1988-09-27 Texas Instruments Inc
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method
JPS6221199B2 (US07943777-20110517-C00090.png) * 1979-11-15 1987-05-11 Nippon Tekisasu Insutsurumentsu Kk
JPH0234119B2 (US07943777-20110517-C00090.png) * 1980-02-04 1990-08-01 Texas Instruments Inc
JPS63127496A (ja) * 1980-02-04 1988-05-31 テキサス　インスツルメンツ　インコ−ポレイテツド 低電力消費記憶装置
JPS589286A (ja) * 1981-07-10 1983-01-19 Toshiba Corp 不揮発性半導体メモリ
JPS6348120B2 (US07943777-20110517-C00090.png) * 1981-07-10 1988-09-27 Tokyo Shibaura Electric Co
JPS5817594A (ja) * 1981-07-23 1983-02-01 Seiko Epson Corp 半導体記憶装置
JPS6252398B2 (US07943777-20110517-C00090.png) * 1982-05-28 1987-11-05 Nippon Electric Co
JPS58208990A (ja) * 1982-05-28 1983-12-05 Nec Corp 記憶装置
JPS6069898A (ja) * 1983-09-26 1985-04-20 Toshiba Corp 半導体記憶装置
JPS61184794A (ja) * 1985-02-13 1986-08-18 Toshiba Corp 半導体記憶装置
JPH0453040B2 (US07943777-20110517-C00090.png) * 1985-02-13 1992-08-25 Tokyo Shibaura Electric Co
JPS6280899A (ja) * 1985-10-04 1987-04-14 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
NL7605024A (nl) 1976-11-16
FR2311382A1 (fr) 1976-12-10
GB1497210A (en) 1978-01-05
FR2311382B1 (US07943777-20110517-C00090.png) 1981-12-31
DE2620749B2 (de) 1977-10-27
IT1060445B (it) 1982-08-20
DE2620749A1 (de) 1976-11-25

Similar Documents

Publication Publication Date Title
JPS51137339A (en) Integrated circuit memory
JPS51148358A (en) Integrated circuit
JPS5283074A (en) Semiconductor memory
JPS5246708A (en) Crossscorrelation circuit disposition
JPS5239387A (en) Semiconductor memory
JPS5287379A (en) Semiconductor memory
GB1557790A (en) Integrated circuit
JPS51114036A (en) Semiconductor memory
GB1537789A (en) Logic circuit
JPS526089A (en) Semiconductor memory
JPS5213626A (en) Recifier circuit
GB1540118A (en) Integrated circuit elements
IE45060L (en) Memory circuit
JPS51111044A (en) Logical circuit
JPS51140442A (en) Memory circuit
GB1541644A (en) Resynchronizable memory
JPS51118340A (en) Nonnvolatile semiconductor memory
GB2006562A (en) Memory circuit
IE42579L (en) Memory circuit
JPS5212584A (en) Semiconductor memory
JPS51123021A (en) Memory
JPS564199A (en) Memory unit
GB1540598A (en) Integrated circuit arrangement
JPS5257742A (en) Memory
JPS5270317A (en) Transistor circuit