JPS5037346A - - Google Patents

Info

Publication number
JPS5037346A
JPS5037346A JP49067624A JP6762474A JPS5037346A JP S5037346 A JPS5037346 A JP S5037346A JP 49067624 A JP49067624 A JP 49067624A JP 6762474 A JP6762474 A JP 6762474A JP S5037346 A JPS5037346 A JP S5037346A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49067624A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5037346A publication Critical patent/JPS5037346A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/36—Coil arrangements
    • H05B6/362—Coil arrangements with flat coil conductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP49067624A 1973-06-18 1974-06-13 Pending JPS5037346A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2331004A DE2331004C3 (de) 1973-06-18 1973-06-18 Induktionsheizspule zum tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
JPS5037346A true JPS5037346A (de) 1975-04-08

Family

ID=5884356

Family Applications (2)

Application Number Title Priority Date Filing Date
JP49067624A Pending JPS5037346A (de) 1973-06-18 1974-06-13
JP1979161054U Expired JPS5755339Y2 (de) 1973-06-18 1979-11-20

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP1979161054U Expired JPS5755339Y2 (de) 1973-06-18 1979-11-20

Country Status (5)

Country Link
US (1) US3898413A (de)
JP (2) JPS5037346A (de)
BE (1) BE816495A (de)
DE (1) DE2331004C3 (de)
IT (1) IT1014933B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007145610A (ja) * 2005-11-24 2007-06-14 Shin Etsu Handotai Co Ltd シリコン半導体結晶の製造方法
JP2012224522A (ja) * 2011-04-21 2012-11-15 Shin Etsu Handotai Co Ltd 複巻誘導加熱コイル及びこれを有する単結晶製造装置並びにこれを用いた単結晶製造方法
WO2021005853A1 (ja) 2019-07-05 2021-01-14 株式会社Sumco 誘導加熱コイル及びこれを用いた単結晶製造装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2357688C2 (de) * 1973-11-19 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Induktionsheizspule zum tiegelfreien Zonenschmelzen
US4184135A (en) * 1978-04-10 1980-01-15 Monsanto Company Breakapart single turn RF induction apparatus
DE3229461A1 (de) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum tiegelfreien zonenschmelzen eines, insbesondere aus silicium bestehenden halbleiterstabes
DE4142245A1 (de) * 1991-12-17 1993-06-24 Tro Transformatoren Und Schalt Isolierung fuer induktoren von induktiven erhitzungsanlagen und verfahren zu ihrer herstellung
JP3127981B2 (ja) * 1995-01-31 2001-01-29 信越半導体株式会社 高周波誘導加熱装置
US5778681A (en) * 1997-04-15 1998-07-14 Varian Associates, Inc. Cooling device for cooling heatable gas chromatography analyte sample injector
EP1968355B1 (de) 2007-03-08 2013-02-27 HÜTTINGER Elektronik GmbH + Co. KG Induktionsspule und Vorrichtung zum induktiven Erwärmen von Werkstücken
JP2009158598A (ja) * 2007-12-25 2009-07-16 Panasonic Electric Works Co Ltd 平面コイル及びこれを用いた非接触電力伝送機器
US20110073591A1 (en) * 2008-07-17 2011-03-31 Seiichi Sawatsubashi Guide Chip Structure for High-Frequency Induction Heating Coil
JP5505365B2 (ja) * 2011-04-28 2014-05-28 信越半導体株式会社 誘導加熱コイルにおける放電防止用絶縁部材及びこれを用いた単結晶製造装置並びに単結晶製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2459971A (en) * 1945-08-30 1949-01-25 Induction Heating Corp Inductor for high-frequency induction heating apparatus
DE1134967B (de) * 1954-03-02 1962-08-23 Siemens Ag Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers
US3017485A (en) * 1957-11-19 1962-01-16 Asea Ab Means for electric vacuum furnaces
DE1205167C2 (de) * 1964-06-15 1973-05-03 Halbleiterwerk Frankfurt Oder Spulenkoerper zum induktiven Erhitzen eines elektrisch leitenden Koerpers im magnetischen Hochfrequenzfeld beim Zonenschmelzen
DE1615429C3 (de) * 1967-12-23 1974-08-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Induktionsheizspule zum tiegelfreien Zonenschmelzen von Stäben aus Halbleitermaterial
DE1802524B1 (de) * 1968-10-11 1970-06-04 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
US3697716A (en) * 1971-11-19 1972-10-10 Gen Electric Induction cooking power converter with improved coil position
DE2158274A1 (de) * 1971-11-24 1973-05-30 Siemens Ag Induktionsheizspule zum tiegelfreien zonenschmelzen von staeben aus halbleitermaterial
DE2217407A1 (de) * 1972-04-11 1973-11-29 Siemens Ag Induktionsheizspule zum tiegelfreien zonenschmelzen

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007145610A (ja) * 2005-11-24 2007-06-14 Shin Etsu Handotai Co Ltd シリコン半導体結晶の製造方法
JP4581977B2 (ja) * 2005-11-24 2010-11-17 信越半導体株式会社 シリコン単結晶の製造方法
JP2012224522A (ja) * 2011-04-21 2012-11-15 Shin Etsu Handotai Co Ltd 複巻誘導加熱コイル及びこれを有する単結晶製造装置並びにこれを用いた単結晶製造方法
WO2021005853A1 (ja) 2019-07-05 2021-01-14 株式会社Sumco 誘導加熱コイル及びこれを用いた単結晶製造装置

Also Published As

Publication number Publication date
JPS5571170U (de) 1980-05-16
DE2331004B2 (de) 1981-05-21
DE2331004C3 (de) 1982-02-04
IT1014933B (it) 1977-04-30
DE2331004A1 (de) 1975-01-09
JPS5755339Y2 (de) 1982-11-30
US3898413A (en) 1975-08-05
BE816495A (fr) 1974-10-16

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