JPS4914052A - - Google Patents
Info
- Publication number
- JPS4914052A JPS4914052A JP4887672A JP4887672A JPS4914052A JP S4914052 A JPS4914052 A JP S4914052A JP 4887672 A JP4887672 A JP 4887672A JP 4887672 A JP4887672 A JP 4887672A JP S4914052 A JPS4914052 A JP S4914052A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4887672A JPS5240937B2 (un) | 1972-05-16 | 1972-05-16 | |
FR7317551A FR2184865B1 (un) | 1972-05-16 | 1973-05-15 | |
IT2413773A IT987474B (it) | 1972-05-16 | 1973-05-15 | Circuito di memoria con transi stor ad effetto di campo |
DE19732366250 DE2366250C2 (de) | 1972-05-16 | 1973-05-16 | Speicherschaltung mit Speicherzellen und Adressenleitungen |
GB2336073A GB1438861A (en) | 1972-05-16 | 1973-05-16 | Memory circuits |
DE19732324769 DE2324769C3 (de) | 1972-05-16 | 1973-05-16 | Steuerschaltung für einen Datenspeicher mit IG-FET's |
DE19732366204 DE2366204C2 (de) | 1972-05-16 | 1973-05-16 | Speicherschaltung |
DE19732366265 DE2366265C3 (de) | 1972-05-16 | 1973-05-16 | Pufferschaltung |
US05/496,190 US3962686A (en) | 1972-05-16 | 1974-08-09 | Memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4887672A JPS5240937B2 (un) | 1972-05-16 | 1972-05-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4914052A true JPS4914052A (un) | 1974-02-07 |
JPS5240937B2 JPS5240937B2 (un) | 1977-10-15 |
Family
ID=12815473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4887672A Expired JPS5240937B2 (un) | 1972-05-16 | 1972-05-16 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5240937B2 (un) |
DE (1) | DE2324769C3 (un) |
FR (1) | FR2184865B1 (un) |
GB (1) | GB1438861A (un) |
IT (1) | IT987474B (un) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5011632A (un) * | 1973-06-01 | 1975-02-06 | ||
JPS51163830U (un) * | 1975-06-20 | 1976-12-27 | ||
JPS5284929A (en) * | 1976-01-07 | 1977-07-14 | Hitachi Ltd | Memory system |
JPS52106640A (en) * | 1976-03-05 | 1977-09-07 | Hitachi Ltd | Memory peripheral circuit |
JPS5325323A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Pre-sense amplifier |
JPS5360125A (en) * | 1976-11-11 | 1978-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
JPS6075510A (ja) * | 1983-09-30 | 1985-04-27 | Mitsubishi Heavy Ind Ltd | 連続製鋼炉における冷材スクラツプの供給方法 |
JPS60242593A (ja) * | 1984-05-16 | 1985-12-02 | Hitachi Micro Comput Eng Ltd | 半導体記憶装置 |
JPS61126684A (ja) * | 1984-11-26 | 1986-06-14 | Hitachi Ltd | メモリを内蔵した半導体集積回路 |
JPS63275093A (ja) * | 1987-05-06 | 1988-11-11 | Nec Corp | 半導体記憶装置 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3964030A (en) * | 1973-12-10 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Semiconductor memory array |
US3969706A (en) | 1974-10-08 | 1976-07-13 | Mostek Corporation | Dynamic random access memory misfet integrated circuit |
JPS51142925A (en) | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Address buffer circuit |
US4042915A (en) * | 1976-04-15 | 1977-08-16 | National Semiconductor Corporation | MOS dynamic random access memory having an improved address decoder circuit |
DE2760461C2 (de) * | 1976-06-01 | 1994-04-21 | Texas Instruments Inc | Schaltungsanordnung für einen Halbleiterspeicher |
JPS5810799B2 (ja) | 1976-06-01 | 1983-02-28 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体記憶装置 |
JPS5453652A (en) * | 1977-10-07 | 1979-04-27 | Denyo Co Ltd | Battery welder |
JPH0124644Y2 (un) * | 1979-08-28 | 1989-07-26 | ||
US4539661A (en) * | 1982-06-30 | 1985-09-03 | Fujitsu Limited | Static-type semiconductor memory device |
JPS5956292A (ja) * | 1982-09-24 | 1984-03-31 | Hitachi Ltd | 半導体記憶装置 |
DE3745016C2 (de) * | 1986-11-11 | 1996-01-18 | Mitsubishi Electric Corp | Halbleiterspeichereinrichtung |
JP2511910B2 (ja) * | 1986-11-11 | 1996-07-03 | 三菱電機株式会社 | 半導体記憶装置 |
US4926387A (en) * | 1988-12-27 | 1990-05-15 | Intel Corporation | Memory timing circuit employing scaled-down models of bit lines using reduced number of memory cells |
KR100296964B1 (ko) * | 1999-06-28 | 2001-11-01 | 박종섭 | 패킷 명령어 구동형 메모리소자 |
GB2360113B (en) * | 2000-03-08 | 2004-11-10 | Seiko Epson Corp | Dynamic random access memory |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1100461A (en) * | 1963-10-02 | 1968-01-24 | Automatic Telephone & Elect | Improvements in or relating to magnetic core matrix data storage devices |
-
1972
- 1972-05-16 JP JP4887672A patent/JPS5240937B2/ja not_active Expired
-
1973
- 1973-05-15 IT IT2413773A patent/IT987474B/it active
- 1973-05-15 FR FR7317551A patent/FR2184865B1/fr not_active Expired
- 1973-05-16 GB GB2336073A patent/GB1438861A/en not_active Expired
- 1973-05-16 DE DE19732324769 patent/DE2324769C3/de not_active Expired
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5011632A (un) * | 1973-06-01 | 1975-02-06 | ||
JPS51163830U (un) * | 1975-06-20 | 1976-12-27 | ||
JPS5545992B2 (un) * | 1976-01-07 | 1980-11-20 | ||
JPS5284929A (en) * | 1976-01-07 | 1977-07-14 | Hitachi Ltd | Memory system |
JPS52106640A (en) * | 1976-03-05 | 1977-09-07 | Hitachi Ltd | Memory peripheral circuit |
JPS566062B2 (un) * | 1976-03-05 | 1981-02-09 | ||
JPS5325323A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Pre-sense amplifier |
JPS5636515B2 (un) * | 1976-08-23 | 1981-08-25 | ||
JPS5360125A (en) * | 1976-11-11 | 1978-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
JPS6075510A (ja) * | 1983-09-30 | 1985-04-27 | Mitsubishi Heavy Ind Ltd | 連続製鋼炉における冷材スクラツプの供給方法 |
JPS60242593A (ja) * | 1984-05-16 | 1985-12-02 | Hitachi Micro Comput Eng Ltd | 半導体記憶装置 |
JPS61126684A (ja) * | 1984-11-26 | 1986-06-14 | Hitachi Ltd | メモリを内蔵した半導体集積回路 |
JPS63275093A (ja) * | 1987-05-06 | 1988-11-11 | Nec Corp | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
DE2324769A1 (de) | 1973-12-06 |
JPS5240937B2 (un) | 1977-10-15 |
IT987474B (it) | 1975-02-20 |
GB1438861A (en) | 1976-06-09 |
DE2324769C3 (de) | 1987-07-09 |
DE2324769B2 (de) | 1978-12-21 |
FR2184865B1 (un) | 1980-03-07 |
FR2184865A1 (un) | 1973-12-28 |