JPS4893962A - - Google Patents

Info

Publication number
JPS4893962A
JPS4893962A JP48019164A JP1916473A JPS4893962A JP S4893962 A JPS4893962 A JP S4893962A JP 48019164 A JP48019164 A JP 48019164A JP 1916473 A JP1916473 A JP 1916473A JP S4893962 A JPS4893962 A JP S4893962A
Authority
JP
Japan
Prior art keywords
integrated circuit
conductive layer
substrate
interposed
external electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48019164A
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722207510 external-priority patent/DE2207510C3/de
Application filed filed Critical
Publication of JPS4893962A publication Critical patent/JPS4893962A/ja
Priority to US439723A priority Critical patent/US3915139A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H10W72/90—
    • H10W72/536—
    • H10W72/5524—
    • H10W72/59—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
JP48019164A 1972-02-17 1973-02-16 Pending JPS4893962A (cg-RX-API-DMAC10.html)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US439723A US3915139A (en) 1973-02-16 1974-02-05 Device for controlling injection quantity of fuel for internal combustion engines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722207510 DE2207510C3 (de) 1972-02-17 Verfahren zur Herstellung integrierter Schaltungen mit Halbleiterschichten auf isolierendem Substrat

Publications (1)

Publication Number Publication Date
JPS4893962A true JPS4893962A (cg-RX-API-DMAC10.html) 1973-12-04

Family

ID=5836253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48019164A Pending JPS4893962A (cg-RX-API-DMAC10.html) 1972-02-17 1973-02-16

Country Status (11)

Country Link
US (1) US4017769A (cg-RX-API-DMAC10.html)
JP (1) JPS4893962A (cg-RX-API-DMAC10.html)
AT (1) AT339372B (cg-RX-API-DMAC10.html)
BE (1) BE795556A (cg-RX-API-DMAC10.html)
CH (1) CH551695A (cg-RX-API-DMAC10.html)
FR (1) FR2172200B1 (cg-RX-API-DMAC10.html)
GB (1) GB1367420A (cg-RX-API-DMAC10.html)
IT (1) IT979053B (cg-RX-API-DMAC10.html)
LU (1) LU67043A1 (cg-RX-API-DMAC10.html)
NL (1) NL7302015A (cg-RX-API-DMAC10.html)
SE (1) SE377003C (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047580A (cg-RX-API-DMAC10.html) * 1973-08-28 1975-04-28

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262299A (en) * 1979-01-29 1981-04-14 Rca Corporation Semiconductor-on-insulator device and method for its manufacture
JPS5846174B2 (ja) * 1981-03-03 1983-10-14 株式会社東芝 半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1160744A (en) * 1965-11-05 1969-08-06 Plessey Co Ltd Improvements in or relating to Semiconductor Devices
US3413145A (en) * 1965-11-29 1968-11-26 Rca Corp Method of forming a crystalline semiconductor layer on an alumina substrate
US3736193A (en) * 1970-10-26 1973-05-29 Fairchild Camera Instr Co Single crystal-polycrystalline process for electrical isolation in integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047580A (cg-RX-API-DMAC10.html) * 1973-08-28 1975-04-28

Also Published As

Publication number Publication date
SE377003C (sv) 1976-12-20
CH551695A (de) 1974-07-15
IT979053B (it) 1974-09-30
GB1367420A (en) 1974-09-18
FR2172200B1 (cg-RX-API-DMAC10.html) 1978-04-14
ATA1035072A (de) 1977-02-15
AT339372B (de) 1977-10-10
LU67043A1 (cg-RX-API-DMAC10.html) 1973-04-19
SE377003B (cg-RX-API-DMAC10.html) 1975-06-16
DE2207510B2 (de) 1974-10-24
FR2172200A1 (cg-RX-API-DMAC10.html) 1973-09-28
DE2207510A1 (de) 1973-08-30
US4017769A (en) 1977-04-12
NL7302015A (cg-RX-API-DMAC10.html) 1973-08-21
BE795556A (fr) 1973-06-18

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