FR2172200B1 - - Google Patents

Info

Publication number
FR2172200B1
FR2172200B1 FR7305135A FR7305135A FR2172200B1 FR 2172200 B1 FR2172200 B1 FR 2172200B1 FR 7305135 A FR7305135 A FR 7305135A FR 7305135 A FR7305135 A FR 7305135A FR 2172200 B1 FR2172200 B1 FR 2172200B1
Authority
FR
France
Prior art keywords
integrated circuit
conductive layer
substrate
interposed
external electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7305135A
Other languages
English (en)
French (fr)
Other versions
FR2172200A1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722207510 external-priority patent/DE2207510C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2172200A1 publication Critical patent/FR2172200A1/fr
Application granted granted Critical
Publication of FR2172200B1 publication Critical patent/FR2172200B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H10W72/90—
    • H10W72/536—
    • H10W72/5524—
    • H10W72/59—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7305135A 1972-02-17 1973-02-14 Expired FR2172200B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722207510 DE2207510C3 (de) 1972-02-17 Verfahren zur Herstellung integrierter Schaltungen mit Halbleiterschichten auf isolierendem Substrat

Publications (2)

Publication Number Publication Date
FR2172200A1 FR2172200A1 (cg-RX-API-DMAC10.html) 1973-09-28
FR2172200B1 true FR2172200B1 (cg-RX-API-DMAC10.html) 1978-04-14

Family

ID=5836253

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7305135A Expired FR2172200B1 (cg-RX-API-DMAC10.html) 1972-02-17 1973-02-14

Country Status (11)

Country Link
US (1) US4017769A (cg-RX-API-DMAC10.html)
JP (1) JPS4893962A (cg-RX-API-DMAC10.html)
AT (1) AT339372B (cg-RX-API-DMAC10.html)
BE (1) BE795556A (cg-RX-API-DMAC10.html)
CH (1) CH551695A (cg-RX-API-DMAC10.html)
FR (1) FR2172200B1 (cg-RX-API-DMAC10.html)
GB (1) GB1367420A (cg-RX-API-DMAC10.html)
IT (1) IT979053B (cg-RX-API-DMAC10.html)
LU (1) LU67043A1 (cg-RX-API-DMAC10.html)
NL (1) NL7302015A (cg-RX-API-DMAC10.html)
SE (1) SE377003C (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047580A (cg-RX-API-DMAC10.html) * 1973-08-28 1975-04-28
US4262299A (en) * 1979-01-29 1981-04-14 Rca Corporation Semiconductor-on-insulator device and method for its manufacture
JPS5846174B2 (ja) * 1981-03-03 1983-10-14 株式会社東芝 半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1160267A (en) * 1965-11-05 1969-08-06 Plessey Co Ltd Improvements in or relating to Semiconductor Devices
US3413145A (en) * 1965-11-29 1968-11-26 Rca Corp Method of forming a crystalline semiconductor layer on an alumina substrate
US3736193A (en) * 1970-10-26 1973-05-29 Fairchild Camera Instr Co Single crystal-polycrystalline process for electrical isolation in integrated circuits

Also Published As

Publication number Publication date
AT339372B (de) 1977-10-10
FR2172200A1 (cg-RX-API-DMAC10.html) 1973-09-28
NL7302015A (cg-RX-API-DMAC10.html) 1973-08-21
US4017769A (en) 1977-04-12
DE2207510B2 (de) 1974-10-24
ATA1035072A (de) 1977-02-15
DE2207510A1 (de) 1973-08-30
SE377003B (cg-RX-API-DMAC10.html) 1975-06-16
GB1367420A (en) 1974-09-18
JPS4893962A (cg-RX-API-DMAC10.html) 1973-12-04
CH551695A (de) 1974-07-15
IT979053B (it) 1974-09-30
SE377003C (sv) 1976-12-20
BE795556A (fr) 1973-06-18
LU67043A1 (cg-RX-API-DMAC10.html) 1973-04-19

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Legal Events

Date Code Title Description
ST Notification of lapse