JPS4826437A - - Google Patents

Info

Publication number
JPS4826437A
JPS4826437A JP47070086A JP7008672A JPS4826437A JP S4826437 A JPS4826437 A JP S4826437A JP 47070086 A JP47070086 A JP 47070086A JP 7008672 A JP7008672 A JP 7008672A JP S4826437 A JPS4826437 A JP S4826437A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47070086A
Other languages
Japanese (ja)
Other versions
JPS5314351B2 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4826437A publication Critical patent/JPS4826437A/ja
Publication of JPS5314351B2 publication Critical patent/JPS5314351B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
JP7008672A 1971-08-09 1972-07-14 Expired JPS5314351B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16996171A 1971-08-09 1971-08-09

Publications (2)

Publication Number Publication Date
JPS4826437A true JPS4826437A (de) 1973-04-07
JPS5314351B2 JPS5314351B2 (de) 1978-05-17

Family

ID=22617925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7008672A Expired JPS5314351B2 (de) 1971-08-09 1972-07-14

Country Status (10)

Country Link
JP (1) JPS5314351B2 (de)
AR (1) AR200242A1 (de)
BR (2) BR7205403D0 (de)
CH (1) CH534939A (de)
DE (1) DE2236510C3 (de)
FR (1) FR2148581B1 (de)
GB (1) GB1374009A (de)
IT (1) IT963412B (de)
NL (1) NL7209890A (de)
SE (1) SE384756B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147226A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor memory device
JPS5257741A (en) * 1975-11-07 1977-05-12 Hitachi Ltd Semiconductor memory
JPS6161293A (ja) * 1984-08-31 1986-03-29 Mitsubishi Electric Corp ダイナミツクメモリ装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES404184A1 (es) * 1971-07-06 1975-06-01 Ibm Una disposicion de celula de memoria de acceso casual para calculadoras digitales.
DE2441385C3 (de) * 1974-08-29 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
GB1562650A (en) * 1976-11-18 1980-03-12 Fairchild Camera Instr Co Memory cell for storing charge
EP0003413A3 (de) * 1978-01-19 1979-08-22 Sperry Corporation Massnahmen zur Verbesserung eines Halbleiterspeichers
DE2912858A1 (de) * 1979-03-30 1980-10-09 Siemens Ag Niederohmige leitung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147226A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor memory device
JPS5634098B2 (de) * 1975-06-13 1981-08-07
JPS5257741A (en) * 1975-11-07 1977-05-12 Hitachi Ltd Semiconductor memory
JPS5811103B2 (ja) * 1975-11-07 1983-03-01 株式会社日立製作所 ハンドウタイメモリ
JPS6161293A (ja) * 1984-08-31 1986-03-29 Mitsubishi Electric Corp ダイナミツクメモリ装置

Also Published As

Publication number Publication date
DE2236510B2 (de) 1974-05-22
AR200242A1 (es) 1974-10-31
DE2236510C3 (de) 1975-01-23
GB1374009A (en) 1974-11-13
CH534939A (de) 1973-03-15
FR2148581A1 (de) 1973-03-23
SE384756B (sv) 1976-05-17
BR7205403D0 (pt) 1973-06-07
DE2236510A1 (de) 1973-03-08
IT963412B (it) 1974-01-10
NL7209890A (de) 1973-02-13
JPS5314351B2 (de) 1978-05-17
FR2148581B1 (de) 1980-03-21
BR7205394D0 (pt) 1973-06-07

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