JPH1168114A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JPH1168114A
JPH1168114A JP24606697A JP24606697A JPH1168114A JP H1168114 A JPH1168114 A JP H1168114A JP 24606697 A JP24606697 A JP 24606697A JP 24606697 A JP24606697 A JP 24606697A JP H1168114 A JPH1168114 A JP H1168114A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor device
impurity element
channel formation
formation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP24606697A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1168114A5 (cg-RX-API-DMAC7.html
Inventor
Shunpei Yamazaki
舜平 山崎
Hideto Onuma
英人 大沼
Kenji Fukunaga
健司 福永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP24606697A priority Critical patent/JPH1168114A/ja
Publication of JPH1168114A publication Critical patent/JPH1168114A/ja
Publication of JPH1168114A5 publication Critical patent/JPH1168114A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP24606697A 1997-08-26 1997-08-26 半導体装置およびその作製方法 Withdrawn JPH1168114A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24606697A JPH1168114A (ja) 1997-08-26 1997-08-26 半導体装置およびその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24606697A JPH1168114A (ja) 1997-08-26 1997-08-26 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH1168114A true JPH1168114A (ja) 1999-03-09
JPH1168114A5 JPH1168114A5 (cg-RX-API-DMAC7.html) 2005-06-09

Family

ID=17142966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24606697A Withdrawn JPH1168114A (ja) 1997-08-26 1997-08-26 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH1168114A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100620888B1 (ko) * 2004-01-29 2006-09-13 네오폴리((주)) 비정질 반도체 박막의 결정화 방법을 이용한 박막 트랜지스터의 제조방법
JP2008182124A (ja) * 2007-01-25 2008-08-07 Semiconductor Energy Lab Co Ltd 表示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100620888B1 (ko) * 2004-01-29 2006-09-13 네오폴리((주)) 비정질 반도체 박막의 결정화 방법을 이용한 박막 트랜지스터의 제조방법
JP2008182124A (ja) * 2007-01-25 2008-08-07 Semiconductor Energy Lab Co Ltd 表示装置

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