JPH11509683A - 混合積層化超格子材料を有する集積回路およびその作成プロセスに使用するための前駆体溶液 - Google Patents
混合積層化超格子材料を有する集積回路およびその作成プロセスに使用するための前駆体溶液Info
- Publication number
- JPH11509683A JPH11509683A JP8528508A JP52850896A JPH11509683A JP H11509683 A JPH11509683 A JP H11509683A JP 8528508 A JP8528508 A JP 8528508A JP 52850896 A JP52850896 A JP 52850896A JP H11509683 A JPH11509683 A JP H11509683A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- superlattice
- perovskite
- site
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 290
- 239000002243 precursor Substances 0.000 title claims abstract description 152
- 238000000034 method Methods 0.000 title claims description 54
- 230000008569 process Effects 0.000 title description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 184
- 239000002184 metal Substances 0.000 claims abstract description 184
- 239000001301 oxygen Substances 0.000 claims abstract description 37
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000012705 liquid precursor Substances 0.000 claims abstract description 13
- 230000010287 polarization Effects 0.000 claims description 62
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 61
- 229910052797 bismuth Inorganic materials 0.000 claims description 58
- 239000000203 mixture Substances 0.000 claims description 44
- 239000010955 niobium Substances 0.000 claims description 43
- 239000003990 capacitor Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 31
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 claims description 28
- 150000002739 metals Chemical class 0.000 claims description 25
- 125000004429 atom Chemical group 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 23
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 21
- 239000002904 solvent Substances 0.000 claims description 21
- 239000008096 xylene Substances 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 20
- 229910052715 tantalum Inorganic materials 0.000 claims description 19
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 18
- 150000004703 alkoxides Chemical class 0.000 claims description 18
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 18
- 229910052712 strontium Inorganic materials 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 16
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 16
- 229910052758 niobium Inorganic materials 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 11
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 11
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052716 thallium Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000006227 byproduct Substances 0.000 claims description 7
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- 208000000474 Poliomyelitis Diseases 0.000 claims 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 claims 1
- 229910001922 gold oxide Inorganic materials 0.000 claims 1
- 150000005309 metal halides Chemical group 0.000 claims 1
- WFPQISQTIVPXNY-UHFFFAOYSA-N niobium strontium Chemical compound [Sr][Nb] WFPQISQTIVPXNY-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229940095064 tartrate Drugs 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 13
- 238000003475 lamination Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 218
- 239000000243 solution Substances 0.000 description 137
- 150000004706 metal oxides Chemical class 0.000 description 34
- 229910044991 metal oxide Inorganic materials 0.000 description 33
- 238000000137 annealing Methods 0.000 description 30
- 230000005684 electric field Effects 0.000 description 26
- 238000005259 measurement Methods 0.000 description 24
- 230000007547 defect Effects 0.000 description 22
- 230000015654 memory Effects 0.000 description 18
- 150000007942 carboxylates Chemical class 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 13
- 238000001035 drying Methods 0.000 description 13
- 238000005755 formation reaction Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- -1 Titanium bismuth niobium Chemical compound 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 9
- 150000001768 cations Chemical class 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 239000003446 ligand Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000009835 boiling Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 6
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000010835 comparative analysis Methods 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000004821 distillation Methods 0.000 description 6
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- SHZIWNPUGXLXDT-UHFFFAOYSA-N ethyl hexanoate Chemical compound CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- FZXRXKLUIMKDEL-UHFFFAOYSA-N 2-Methylpropyl propanoate Chemical compound CCC(=O)OCC(C)C FZXRXKLUIMKDEL-UHFFFAOYSA-N 0.000 description 4
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 230000006399 behavior Effects 0.000 description 4
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- 150000002148 esters Chemical class 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 4
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 4
- AQIXEPGDORPWBJ-UHFFFAOYSA-N pentan-3-ol Chemical compound CCC(O)CC AQIXEPGDORPWBJ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- 229940093475 2-ethoxyethanol Drugs 0.000 description 3
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- OEBXVKWKYKWDDA-UHFFFAOYSA-N [Ta].[Bi].[Sr] Chemical compound [Ta].[Bi].[Sr] OEBXVKWKYKWDDA-UHFFFAOYSA-N 0.000 description 3
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- 230000004888 barrier function Effects 0.000 description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
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- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
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- UHOPWFKONJYLCF-UHFFFAOYSA-N 2-(2-sulfanylethyl)isoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(CCS)C(=O)C2=C1 UHOPWFKONJYLCF-UHFFFAOYSA-N 0.000 description 2
- RXGUIWHIADMCFC-UHFFFAOYSA-N 2-Methylpropyl 2-methylpropionate Chemical compound CC(C)COC(=O)C(C)C RXGUIWHIADMCFC-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229920004880 RTP PEK Polymers 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
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- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 2
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- 238000006073 displacement reaction Methods 0.000 description 2
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- 238000010304 firing Methods 0.000 description 2
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- QNVRIHYSUZMSGM-LURJTMIESA-N 2-Hexanol Natural products CCCC[C@H](C)O QNVRIHYSUZMSGM-LURJTMIESA-N 0.000 description 1
- UPXXTSAGYPTXPT-UHFFFAOYSA-I 2-ethylhexanoate tantalum(5+) Chemical compound [Ta+5].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O UPXXTSAGYPTXPT-UHFFFAOYSA-I 0.000 description 1
- CYWDDBNPXTUVNN-UHFFFAOYSA-I 2-ethylhexanoate;niobium(5+) Chemical compound [Nb+5].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O CYWDDBNPXTUVNN-UHFFFAOYSA-I 0.000 description 1
- SYGNFMCWKSOMRU-UHFFFAOYSA-N 2-methylpropan-1-olate;tantalum(5+) Chemical compound [Ta+5].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-] SYGNFMCWKSOMRU-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.第1の電極と該第2の電極との間に挟持された積層化超格子材料(112)と電 気的に接触する該第1の電極(110)および該第2の電極(114)を有する、薄膜電子 素子(100)であって、 該素子は、 該材料が複数の層(116、124、128)を順に有しており、該順は、A−サイト金 属、B−サイト金属、およびその混合物からなる群より選択される金属の酸化物 から形成される、A/Bイオン性サブユニットセル(146)を有するA/B層(124) と;超格子生成イオン性サブユニットセルを有する超格子生成層(116)と;A− サイト金属およびB−サイト金属の両方を含有するペロブスカイト型AB層(128 )であって、該AB層は該A/B層の格子とは異なるペロブスカイト型酸素八面 体格子を有するペロブスカイト型AB層と、 を含んでいることを特徴とする、薄膜電子素子。 2.前記A/B層は、以下のA/B層実験式を有しており、 (Am-1BmOc)V, 上式において、Aは前記A/Bイオン性サブユニットセル中のA−サイト原子で あり、Bは該A/Bイオン性サブユニットセル中のB−サイト原子であり、Oは 酸素であり、mは少なくとも1の値を有する数字であり、cは(3m+1)、( 3m+0.5)および(3m)からなる群より選択される値であり、Sは3価の超 格子生成元素であり、Vは1+、1−、2−、および3−からなる群より選択さ れるA/B層電荷であり; 前記ペロブスカイト型AB層は、以下のペロブスカイト型AB層実験式を有し ており、 (A'n-1B'nO3n+1)V', 上式において、A'は該ペロブスカイト型ABイオン性サブユニットセル中のA −サイト原子であり、B'は該ペロブスカイト型ABイオン性サブユニットセル 中のB−サイト原子であり、Oは酸素であり、nは1を越える値を有する数字で あり、V'は1+、1−、2−、および3−からなる群より選択される第2式電 荷であり、A'、B'、およびnのうち少なくとも1つは、該A/B層実験式にお ける対応要素A、B、およびmとは異なり; 前記超格子生成層は、以下の前記超格子生成層実験式を有しており、 (S2O2)2+, 上式において、Sは3価の超格子生成元素である、請求項1に記載の素子。 3.前記A/B層実験式は、(c=3m+0.5)、(m=1)かつ(V=2−) である場合の材料を含み、前記AB層実験式は、(n=1)かつ(V=2−)で ある場合の材料を含む、請求項2に記載の素子。 4.前記材料は、ストロンチウムビスマスタンタレート、ストロンチウムニオビ ウムビスマスタンタレート、およびストロンチウムビスマスニオベートからなる 群より選択される、請求項2に記載の素子。 5.前記材料は、以下の実験繰り返し構造式を有しており、 G{[(L1δ1)(Σi=1 JMiαi)][(L2δ2)(Σi=1 JMiαi)]... [(Lkδk)(Σi=1 JMiαi)]}G..., 上式において、Gは3価金属を有する超格子生成層であり;LはA−サイト金属 、B−サイト金属、およびその混合物からなる群より選択される金属を含有する 層であり、異なる結晶格子を対応する整数下付添字1、2、およびkで表してお り;δは特定の格子で形成される所与のL層を見いだす相互排他的な確率であり ;αiは、対応するL層の平均的実験式における所与の金属Miの実験式配分で あり;Jは該対応するL層中のMi金属の合計数に等しい整数である、請求項1 に記載の素子。 6.前記材料は、L層の合計数に基づいたL1層のパーセンテージが23〜33 %である、請求項7に記載の素子。 7.前記材料は、約150KV/cm未満の2Ecかつプラチナおよびチタン下 部電極上にて約20℃の温度において決定された2Prが20μC/cm2を越え 、かつ、実質的に2Pr分極劣化なしに3Vにおいて少なくとも1010サイクル のスイッチング疲労耐性を与える、積層化超格子材料形成モイエティー(moiety) の化学量論的混合物を含んでいる、請求項1に記載の素子。 8.ペロブスカイト型A−サイトモイエティー、ペロブスカイト型B−サイトモ イエティー、および超格子生成モイエティーを含む複数のポリオキシアルキレー ト化金属モイエティーを提供する工程を包含する、電子素子を作成するための方 法であって、 該方法は、 該各金属モイエティーを、複数の層(116、124、128)を順に有する積層化超格 子材料(112)に対応する相対割合て組み合わせる工程であって、該順は、A−サ イト金属、B−サイト金属、およびその混合物からなる群より選択される金属の 酸化物から形成される、A/Bイオン性サブユニットセル(146)を有するA/B( 124)と;超格子生成イオン性サブユニットセルを有する超格子生成層(116)と; A−サイト金属およびB−サイト金属の両方を含有するペロブスカイト型AB層 (128)であって、該AB層は該A/B層の格子とは異なるペロブスカイト型酸素 八面体格子を有するペロブスカイト型AB層と、を含んでいる工程と、 該前駆体溶液を基板に塗布する工程と、 該基板上の該前駆体溶液を処理することにより、該A/B層、該超格子生成層 、および該ペロブスカイト型AB層を有する混合積層化超格子材料を形成する工 程と、 を特徴とする方法。 9.前記異なる前駆体溶液を、1ヶ月を越える時間の間、塗布可能準備状態で貯 蔵する工程を更に包含する、請求項8に記載の方法。 10.意図された使用環境における前記素子の動作温度を決定する工程を更に包 含し、前記組み合わせ工程は、該動作温度における該素子の分極を最適にするた めに該相対割合の金属を選択する工程を含む、請求項8に記載の方法。 11.薄膜強誘電容量素子の作成に使用する、 A−サイト金属部分、B−サイト金属部分、超格子生成金属部分、および溶媒 を含む実質的に均一な混合液を有する液状前駆体溶液であって、 該各金属部分は複数の層(124、116、128)を順に有する積層化超格子材料に対 応する相対割合で混合され、該順は、A/Bイオン性サブユニットセル(146)を 有するA/B層(124)と、超格子生成イオン性サブユニットセルを有する超格子 生成層(116)と、該A/Bイオン性サブユニットセルとは異なるペロブスカイト 型AB八面体イオン性サブユニットセル(142)を有するペロブスカイト型AB層( 128)との順である、請求項11に記載の溶液。 12.前記溶媒は、キシレン、n−オクタン、1−ブタノール、n−ブチルアセ テート、およびその混合物からなる群より選択される、請求項11に記載の溶液 。 13.前記金属部分の少なくとも1つは、以下の群より選択される分子式によっ て定義される物質を含んでいる、請求項11に記載の溶液: (R'-COO-)aM(-O-R)n,and (R'-COO-)aM(-O-M'(-O-C-R")b-1)n, 上式において、Mは外側原子価(a+n)を有する金属であり、M'は外側原子 価bを有する金属であり、MおよびM'は、タンタル、カルシウム、ビスマス、 鉛、イットリウム、スカンジウム、ランタン、アンチモン、クロム、タリウム、 ハフニウム、タングステン、ニオビウム、ジルコニウム、バナジウム、マンガン 、鉄、コバルト、ニッケル、マグネシウム、モリブデン、ストロンチウム、バリ ウム、チタン、および亜鉛からなる群より独立に選択され;R'およびR''は4 〜9個の炭素原子を有するアルキル基であり;Rは3〜8個の炭素原子を有する ア ルキル基である。 14.請求項11に記載の溶液であって、前記相対割合の金属は、以下のA/B 層実験式を有する前記A/B層を生じることのできるA/B層量を含む: (Am-1BmOc)V, 上式において、Aは前記A/Bイオン性サブユニットセル中のA−サイト原子で あり;Bは該A/Bイオン性サブユニットセル中のB−サイト原子であり;Oは 酸素であり;mは少なくとも1の値を有する数字であり;cは(3m+1)およ び(3m)からなる群より選択される値であり;Sは3価の超格子生成元素であ り;Vは1+、1−、2−、および3−からなる群より選択されるA/B層電荷 であり、 該相対割合の金属は更に、以下のAB実験式を有する前記AB層を生じること のできるAB層量を含む: (A'n-1B'nO3n+1)V', 上式において、A'は前記ペロブスカイト型ABイオン性サブユニットセル中の A−サイト原子であり;B'は該ペロブスカイト型ABイオン性サブユニットセ ル中のB−サイト原子であり;Oは酸素であり;nは1を越える値を有する数字 であり;V'は1+、1−、2−、および3−からなる群より選択される第2式 イオン電荷であり、A'、B'、およびnのうち少なくとも1つは、該A/B層実 験式における対応要素A、B、およびmとは異なり、 該相対割合の金属は、以下の超格子生成層実験式を生じることのできる超格子 生成層量を含む: (S2O2)2+, 上式において、Sは超格子生成元素である、 溶液。 15.前記相対割合の金属は、m=1に対応する前記A/B層量を含み、n=2 に対応する前記ペロブスカイト型AB層量を含む、請求項14に記載の溶液。 16.前記A/B層量対前記ペロブスカイト型AB層量の比が、前記BおよびB 'がTa5+のときは最大約3:10(層対層)であり、前記BおよびB'がNb5+ を含むときは最大約2:5である、請求項14に記載の溶液。 17.ペロブスカイト型A−サイト金属モイエティー、ペロブスカイト型B−サ イト金属モイエティー、および超格子生成金属モイエティーを含む複数のポリオ キシアルキレート化金属モイエティーを提供する工程を包含する、薄膜強誘電材 料の製造に使用する前駆体溶液を作成するための方法であって、 該方法は、 該各金属モイエティーを、複数の層(124、116、128)を順に有する積層化超格 子材料に対応する相対割合で組み合わせる工程であって、該順は、A−サイト金 属、B−サイト金属、およびその混合物からなる群より選択される金属の酸化物 から形成される、A/Bイオン性サブユニットセル(146)を有するA/B層(124) と、超格子生成イオン性サブユニットセルを有する超格子生成層(116)と、A− サイト金属およびB−サイト金属の両方を含有するペロブスカイト型AB層(128 )であって、該AB層は該A/B層の格子とは異なるペロブスカイト型酸素八面 体格子を有するペロブスカイト型AB層と、を含んている工程と; 該各金属モイエティーを溶媒中において実質的に均一に混合することによって 該溶液を提供する工程と、 を特徴とする方法。 18.前記提供工程は、十分な過剰量の、該金属モイエティーの少なくとも1つ を加えることにより、前記材料の形成中に予期される金属揮発損失を補償する工 程を含む、請求項17に記載の方法。 19.前記提供工程は、金属アルコキシドを金属アルコキシカルボキシレートと 反応させることにより、プレ前駆体溶液中における前記金属モイエティーの部分 間で、反応を生成する工程を含む、請求項17に記載の方法。 20.前記提供工程は更に、前記プレ前駆体溶液を蒸留することにより、水およ び前記反応の副産物を除去する工程を含む、請求項17に記載の方法。 21.請求項17に記載の方法であって、前記組み合わせる工程は、 以下のA/B層実験式に対応するA/B層金属部分を導入する工程を含む: (Am-1BmOc)V, 上式において、Aは前記A/Bイオン性サブユニットセル中のA−サイト原子で あり;Bは該A/Bイオン性サブユニットセル中のB−サイト原子であり;Oは 酸素であり;mは少なくとも1の値を有する数字であり;cは(3m+1)およ び(3m)からなる群より選択される値であり;Sは3価の超格子生成元素であ り;Vは1+、1−、2−、および3−からなる群より選択されるA/B層電荷 であり、 該組み合わせる工程は、以下のペロブスカイト型AB層実験式に対応するペロ ブスカイト型AB層金属部分を加える工程を含む: (A'n-1B'nO3n+1)V', 上式において、A'は前記ペロブスカイト型ABイオン性サブユニットセル中の A−サイト原子であり;B'は該ペロブスカイト型ABイオン性サブユニットセ ル中のB−サイト原子であり;Oは酸素であり、nは1を越える値を有する数字 であり;V'は1+、1−、2−、および3−からなる群より選択される第2式 イオン電荷であり、A'、B'、およびnのうち少なくとも1つは、該A/B層実 験式における対応要素A、B、およびmとは異なり; 該組み合わせる工程は、以下の実験式に対応する金属を含む超格子生成部分を 混合する工程を含む: (S2O2)2+, 上式において、Sは3価の超格子生成元素である、請求項17に記載の方法。 22.前記相対割合の金属は、m=1に対応する前記A/Bイオン性サブユニッ トセルの各層を生じるように割り当てられたA/B層部分および、n=2に対応 する前記ペロブスカイト型AB八面体イオン性サブユニットセルの各層を生じる ように割り当てられたペロブスカイト型AB層部分を含む、請求項21に記載の 方法。 23.前記組み合わせる工程は、前記金属モイエティーがビスマスモイエティー を含むとき、該ビスマスモイエティーを他の金属モイエティーに加えることによ り混合物を形成し、その後該混合物を約80℃未満の温度に維持する工程を含む 、請求項17に記載の方法。 24.前記溶液を、乾燥した不活性雰囲気下で貯蔵する工程を含む、請求項23 に記載の方法。
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PCT/US1996/003523 WO1996029728A1 (en) | 1995-03-17 | 1996-03-14 | Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same |
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- 1995-03-17 US US08/406,374 patent/US5955754A/en not_active Expired - Lifetime
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- 1996-03-14 EP EP96909700A patent/EP0815586B1/en not_active Expired - Lifetime
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- 1996-03-14 JP JP52850896A patent/JP3747325B2/ja not_active Expired - Lifetime
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- 1996-03-14 DE DE69629361T patent/DE69629361T2/de not_active Expired - Lifetime
- 1996-03-14 CA CA002214833A patent/CA2214833A1/en not_active Abandoned
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KR19980702979A (ko) | 1998-09-05 |
US5840110A (en) | 1998-11-24 |
CA2214833A1 (en) | 1996-09-26 |
DE69629361D1 (de) | 2003-09-11 |
WO1996029728A1 (en) | 1996-09-26 |
CN1127755C (zh) | 2003-11-12 |
JP3747325B2 (ja) | 2006-02-22 |
EP0815586A1 (en) | 1998-01-07 |
DE69629361T2 (de) | 2004-06-24 |
US5955754A (en) | 1999-09-21 |
US5803961A (en) | 1998-09-08 |
HK1009882A1 (en) | 1999-09-10 |
CN1179232A (zh) | 1998-04-15 |
KR100295698B1 (ko) | 2001-10-25 |
EP0815586B1 (en) | 2003-08-06 |
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