JPH1145904A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently harden adhesives in adhering steps of a semiconductor chip to hold leads esp. in preliminary hardening thereof to improve the adhesion and reduce the manufacturing process time of a semiconductor device i.e., the unit process time. SOLUTION: A process of adhering and fixing a semiconductor chip to hold leads 5a using a thermal/ultraviolet hardening adhesive 15 takes two steps preliminary and regular hardening steps to solve the slow speed in the mass production process. The prelim. hardening hardens a surface portion of the adhesive 15 to resist against shocks at carrying and followed by the regular hardening. The prelim. hardening irradiates an ultraviolet beam 16 spot to spot to accelerates hardening irradiated portions and radiates the beam 16 in many directions to more effectively harden esp. the adhesive 15 beneath the leads 5a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a LOC (lead-on-
The present invention relates to a method for manufacturing a semiconductor device having a (chip) structure, and more particularly to a method for manufacturing a semiconductor device capable of improving manufacturing efficiency in a manufacturing process.

[0002]

2. Description of the Related Art In recent years, as a semiconductor chip packaging technology mainly represented by a memory chip, etc.,
The inner lead portion of the lead frame extends over the main surface of the semiconductor chip, and the lead portion and the main surface of the semiconductor chip are bonded and fixed to hold the semiconductor chip.
C technology has been developed. As a conventional LOC type semiconductor device, there is a device in which a main surface of a semiconductor chip and a part of an inner lead portion are bonded and fixed via an insulating tape, but recently, a semiconductor chip and a lead are fixed with an adhesive. LOC type semiconductor devices have been developed.

Hereinafter, a method for manufacturing a conventional LOC type semiconductor device will be described with reference to the drawings. 11 to 13 are cross-sectional views illustrating a conventional method for manufacturing a semiconductor device.

First, a chip bonding step (die bonding step)
Will be described. As shown in FIG. 11A, the semiconductor chip 1 is placed on a stage 2 which can be vacuum-mounted. Here, the semiconductor chip is fixed by vacuum suction so as not to cause unnecessary movement. The stage 2 is provided with pins 2a for regulating the position of the lead frame.

As shown in FIG. 11B, a thermosetting adhesive 3 is applied to a predetermined position on the semiconductor chip 1, that is, a place where the semiconductor chip 1 is bonded to the holding lead portion of the lead frame by a nozzle 4.

[0006] Next, as shown in FIG.
The semiconductor chip 1 to which the lead frame 5 has been applied is aligned with the lead frame 5, and the holding lead portions 5a of the lead frame 5 and the semiconductor chip 1 are bonded. Note that lead frame 5
Is restricted by engaging a pin 2a provided on the stage 2 with a position regulating hole (not shown) on the outside thereof.

[0007] Then, as shown in FIG. 11 (d), the lead frame 5 holding the semiconductor chip 1 is set on a stage 6 such as a curing furnace, and a heating process is performed for a predetermined time to cure the adhesive 3. The heat curing time of the adhesive 3 is about 30 [sec].

Next, the wire bonding step will be described. As shown in FIG. 12A, the semiconductor chip 1 is fixed on the heater block 7 by vacuum suction with respect to the lead frame 5 holding the semiconductor chip 1. In the figure, the semiconductor chip 1 and the lead frame 5 are shown as being separated from each other, but the holding lead portion is bonded to the semiconductor chip. An inner lead portion 8 for making an electrical connection with the semiconductor chip 1 of the frame 5.

Then, as shown in FIG. 12B, the inner leads 8 and the lead frame 5 are pressed by the clampers 9a and 9b, and the inner leads 8 are brought into contact with the main surface of the semiconductor chip 1. Then, the thin metal wire 11 is connected to the inner lead portion 8 and the electrode pad 1a of the semiconductor chip 1 by the capillary 10 of the wire bonder.
Here, the purpose of bringing the inner lead portion 8 into contact with the main surface of the semiconductor chip 1 is to stably connect the thin metal wires 11.

Next, as shown in FIG. 12C, by removing the clamper, the inner lead portion 8 returns to the original state, and as shown in FIG. 1 are electrically connected by a thin metal wire 11.

Next, the resin sealing step will be described. FIG.
As shown in FIG. 3A, the lead frame 5 in which the semiconductor chip 1 and the holding lead portion 5a are adhered by the adhesive 3 is set in the molds 12a and 12b for sealing.

[0013] Then, as shown in FIG.
The sealing resin 14 is injected from the gate port 13 of 2b. FIG. 13C shows the state after the resin injection.

According to the above steps, the semiconductor chip 1 and the leads 5a are fixed with the adhesive 3 as shown in FIG. 13D, and the outer periphery is sealed with the sealing resin 14. Is manufactured.

[0014]

However, the conventional method for manufacturing a semiconductor device has the following problems. In other words, since the semiconductor chip and the holding lead portion of the lead frame are bonded by an adhesive and then the adhesive is cured by heating, a time-limiting process occurs in the adhesive curing step in the manufacturing process, and the mass production process Had a problem of being unsuitable.

The present invention solves the above-mentioned conventional problems. In a method of manufacturing a semiconductor device having a structure in which a semiconductor chip is held at a lead portion via an adhesive, a method for bonding a semiconductor chip to a holding lead portion is provided. Attention has been paid to providing a method of manufacturing a semiconductor device that can efficiently cure by temporary curing of an adhesive, improve the adhesive strength, and reduce the time of the manufacturing process of the semiconductor device, that is, shorten the tact time. Aim.

[0016]

According to the present invention, there is provided a method of manufacturing a semiconductor device having a structure in which a semiconductor chip is held by a first lead portion of a lead frame via an adhesive. In the manufacturing method, the step of bonding the first lead portion of the lead frame and the semiconductor chip with an adhesive and curing the adhesive includes first a first curing step of temporarily curing the adhesive, and then the adhesive And a second curing step of curing.

More specifically, a plurality of first lead portions used to support the semiconductor chip, a plurality of inner lead portions for electrically connecting the semiconductor chip, and an inner lead portion are connected. A step of preparing a lead frame having a plurality of outer lead parts; a step of aligning the first lead part and the semiconductor chip; and a step of applying an adhesive between the first lead part and the main surface of the semiconductor chip. Supplying and bonding the semiconductor chip to the first lead, a first curing step of curing the adhesive, a second curing step of further curing the adhesive after the first curing step, a semiconductor chip and an inner lead And a step of exposing the outer lead portion and sealing the outer periphery of the semiconductor chip with a sealing resin. When a thermosetting and ultraviolet-curable adhesive is used as the adhesive, the first curing step is a temporary curing step of performing effective curing in a short time by irradiating or heating with ultraviolet rays or a combination thereof. The second curing step is a step of fully curing the adhesive.

As described above, the first method for temporarily curing the adhesive is as follows.
Tact time can be shortened by combining the curing step and the second curing step for main curing.

In addition, the inventors may not be able to obtain sufficient adhesive strength when performing a multi-step curing in order to eliminate the rate-limiting step of curing the adhesive.
In multi-stage curing, when moving in each curing step, there is a new problem that the semiconductor chip and the lead may come off due to the impact of the movement. It also derives the means.
That is, in the temporary curing of the adhesive, the surface portion of the adhesive is cured so as to be resistant to the impact at the time of transport, and then is fully cured. In order to harden the heat / ultraviolet curable adhesive, ultraviolet irradiation and heating are not performed. In temporary curing, ultraviolet irradiation is performed in a spot manner to cure the irradiated portion. Effective curing means in the temporary curing step of the adhesive by irradiating ultraviolet rays from multiple directions in order to promote or to make the adhesive interposed in particular under the holding lead part more effective. Is a method for manufacturing a semiconductor device having:

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

FIGS. 1 to 4 are sectional views showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

First, a chip bonding step (die bonding step) of a method for manufacturing a semiconductor device having a structure in which a main surface of a semiconductor chip is bonded to a lead will be described.

As shown in FIG. 1A, the semiconductor chip 1
Is mounted on a stage 2 that can be vacuum-mounted. Here, the semiconductor chip is fixed by vacuum suction so as not to cause unnecessary movement. The stage 2 is provided with pins 2a for regulating the position of the lead frame.

Then, as shown in FIG. 1B, a heat / ultraviolet curable adhesive 15 is applied to a predetermined position on the semiconductor chip 1, that is, a place where the lead frame is bonded to the holding lead.
Is applied by the nozzle 4.

Next, as shown in FIG.
The semiconductor chip 1 to which the lead frame 5 has been applied is aligned with the lead frame 5, and the holding lead portions 5a of the lead frame 5 and the semiconductor chip 1 are bonded. Note that lead frame 5
Is restricted by engaging a pin 2a provided on the stage 2 with a position regulating hole (not shown) on the outside thereof. Also, here, in order to increase the adhesive strength,
An adhesive 15 is provided between the holding lead 5a and the semiconductor chip 1.
Are adhered so that the fillet 15a is formed. The fillet is a portion that protrudes from the adherend due to surface tension. The adhesive strength changes depending on the presence or absence of the fillet, and when the fillet is formed, the adhesive strength is improved.

As shown in FIG. 1D, the holding lead portion 5a of the lead frame 5 holding the semiconductor chip 1
By irradiating the vicinity with ultraviolet rays 16 for a certain period of time, the surface portion of the adhesive 15 is cured and brought into a temporarily cured state. Here, the adhesive 15 is not completely cured, and the surface of the adhesive 15 is exposed to ultraviolet rays 16 (UV:
365 [nm]). The irradiation time of the ultraviolet rays 16 to the adhesive 15 is 2 [sec].
It is about.

Then, as shown in FIG. 1 (e), the lead frame 5 holding the semiconductor chip 1 is set on a stage 6 such as a curing furnace, and is subjected to a heat treatment for a predetermined time to cure the adhesive 15. . Here, the adhesive 15 is completely cured. The heat curing time of the adhesive 15 is 3
It is about 0 [sec].

The adhesive 15 used in this embodiment is:
It is a heat / ultraviolet curable adhesive and is made of a resin containing acrylic oxygen. Adhesive 15
In order to prevent the adhesive 15 from being excessively protruded during the application of the adhesive or the bonding with the lead, the main surface is bonded with 600.
An adhesive having a viscosity of [poise] to 1500 [poise] is used.

As another structure, a chip bonding step (die bonding step) of a method of manufacturing a semiconductor device having a structure in which a side surface of a semiconductor chip and a lead are bonded will be described.

As shown in FIG. 2A, the semiconductor chip 1
Is mounted on a stage 2 that can be vacuum-mounted. Here, the semiconductor chip is fixed by vacuum suction so as not to cause unnecessary movement. The stage 2 is provided with pins 2a for regulating the position of the lead frame.

Next, as shown in FIG. 2B, the semiconductor chip 1 and the lead frame 5 are aligned, and the semiconductor chip 1 is aligned with the holding lead portion 5a of the lead frame 5. The lead frame 5 is regulated by engaging a pin 2a provided on the stage 2 with a position regulating hole (not shown) on the outside thereof.

Then, as shown in FIG. 2C, a heat / ultraviolet curable adhesive 15 is applied by a nozzle 4 to the space between the semiconductor chip 1 and the holding lead 5a. In this case, the adhesive 15 is applied so that the excess adhesive 15 does not protrude.

Then, as shown in FIG. 2D, the adhesive 15 between the side surface of the semiconductor chip 1 and the holding lead portion 5a is irradiated with ultraviolet rays 16 for a predetermined time, so that the surface of the adhesive 15 is The part is cured to a temporary cured state. Here, the adhesive 15 is not completely cured, and the surface of the adhesive 15 is irradiated with ultraviolet rays 16 (UV: 365) to such an extent that the adhesive 15 can be held.
[Nm]). The adhesive 15
The irradiation time of the ultraviolet rays 16 is about 2 [sec]. Here, a fillet 15a of the adhesive 15 is formed between the holding lead portion 5a and the semiconductor chip 1 in order to increase the bonding strength.

Then, as shown in FIG. 2E, the lead frame 5 holding the semiconductor chip 1 is set on a stage 6 such as a curing furnace, and is subjected to a heat treatment for a certain period of time.
The adhesive 15 is cured. Here, the adhesive 15 is completely cured. The heat curing time of the adhesive 15 is 30
[Sec].

The adhesive 15 used in the present embodiment is a heat / ultraviolet curable adhesive, and is made of a resin containing acrylic oxygen. In addition, in order to prevent the adhesive 15 from being excessively protruded or sagged when the adhesive 15 is applied or bonded to the lead, an adhesive having a viscosity of 50 [poise] to 350 [poise] is used for side surface bonding. Things.

In FIG. 1 and FIG. 2, the irradiation of the region of the adhesive 15 with ultraviolet rays is performed by holding the lead 5 a bonded with the adhesive 15 and the portion of the adhesive 15 or the adhesive 1.
The portion 5 is spot-irradiated and processed so that the adhesive 15 is cured in a short time. Adhesive 15
Since the fillet 15a is formed, the fillet 15a is exposed from the holding lead portion 5a, so that the curing by the irradiation of ultraviolet rays is most promoted and the adhesive strength is improved.

Next, the wire bonding step will be described. As shown in FIG. 3A, the semiconductor chip 1 is fixed on the heater block 7 by vacuum suction with respect to the lead frame 5 holding the semiconductor chip 1. In addition,
In the figure, the semiconductor chip 1 and the lead frame 5 are shown as being separated from each other. However, the holding lead portion is bonded to the semiconductor chip. Inner lead portion 8 for making an electrical connection with the semiconductor chip 1 of FIG.

Then, as shown in FIG. 3B, the inner leads 8 and the lead frame 5 are pressed by the clampers 9a and 9b, and the inner leads 8 are brought into contact with the main surface of the semiconductor chip 1. Then, the thin metal wire 11 is connected to the inner lead portion 8 and the electrode pad 1a of the semiconductor chip 1 by the capillary 10 of the wire bonder. Here, the purpose of bringing the inner lead portion 8 into contact with the main surface of the semiconductor chip 1 is to stably connect the thin metal wires 11.

Next, as shown in FIG. 3C, by removing the clamper, the inner lead portion 8 returns to the original state, and as shown in FIG.
And the semiconductor chip 1 are electrically connected by the thin metal wires 11.

Next, the resin sealing step will be described. FIG.
As shown in (a), the semiconductor chip 1 and the holding lead 5
The lead frame 5 to which a is adhered by the adhesive 15 is set in the molds 12a and 12b for sealing.

Then, as shown in FIG.
The sealing resin 14 is injected from the gate port 13 of b. FIG. 4C shows the state after the resin injection.

According to the above steps, the semiconductor chip 1 and the holding lead portion 5a as shown in FIG. 4D are fixed with the adhesive 15, and the outer periphery is sealed with the sealing resin 14.
A C-type semiconductor device is manufactured.

Next, another embodiment of the method of manufacturing a semiconductor device according to the present embodiment will be described, particularly with respect to the step of curing the adhesive after bonding the semiconductor chip and the lead. Figure 5
FIG. 9 is a cross-sectional view illustrating a curing step (temporary curing + main curing) of the adhesive after the semiconductor chip and the lead of the present embodiment are adhered.

First, as shown in FIG. 5, in FIG.
An adhesive 15 is applied to the main surface of the semiconductor chip 1 and a peripheral portion thereof, and the holding lead portion 5a is adhered thereto.
To temporarily cure the adhesive 15 on the surface portion of the adhesive 15, that is, the portion other than the lower portion of the holding lead portion 5 a (in the figure, the hardened portion of the adhesive 15 is hatched). In FIG. 5B, the heater plate 1
The adhesive 15 is subjected to a heat treatment by heating in a heating atmosphere such as 7 and an oven to completely cure the adhesive 15. In this step, two-stage curing of ultraviolet curing (temporary) and thermal curing (book) is performed.
In FIG. 5B, the heating in the main curing is performed in proximity bake on the heater plate 17 and the semiconductor chip 1.
The main curing is performed by placing the semiconductor chip 1 at an interval from the heater plate 1.
The semiconductor chip 1 may be placed on 7 and heated to be cured.

Next, as shown in FIG. 6, in FIG.
An adhesive 15 is applied to the main surface of the semiconductor chip 1 and a peripheral portion thereof, and the holding lead portion 5a is adhered thereto.
To temporarily cure the adhesive 15 on the surface portion of the adhesive 15, that is, the portion other than the lower portion of the holding lead portion 5 a (in the figure, the hardened portion of the adhesive 15 is hatched). In FIG. 6B, the adhesive 15 is completely cured by further irradiating ultraviolet rays 16. In this step, two-stage curing of ultraviolet curing (temporary) + ultraviolet curing (book) is performed.

Next, as shown in FIG. 7, in FIG.
An adhesive 15 is applied to the main surface of the semiconductor chip 1 and a peripheral portion thereof, the holding lead portion 5a is adhered, and the adhesive 15 is applied to the adhesive 15 by heating in a heating atmosphere such as a heater plate 17 and an oven. After performing a heat treatment, the adhesive 15
7 is temporarily cured (the hatched portion of the adhesive 15 is shown in the figure), that is, the portion of the adhesive 15 other than the lower portion of the holding lead portion 5a is temporarily cured.
In (b), heat treatment is performed on the adhesive 15 by heating in a heating atmosphere such as the heater plate 17 and an oven, so that the adhesive 15 is completely cured. In this step, two-stage curing of heat curing (temporary) and heat curing (book) is performed. The heating in the temporary curing promotes the temporary curing by directly placing the semiconductor chip 1 on the heater plate 17. In FIG. 7B, the heating in the main curing is performed by placing the semiconductor chip 1 at intervals between the heater plate 17 and the semiconductor chip 1 in a proximity bake manner.
Although the main curing is performed, the semiconductor chip 1 may be directly placed on the heater plate 17 and heated to be cured.

Next, as shown in FIG. 8, in FIG.
An adhesive 15 is applied to the main surface of the semiconductor chip 1 and a peripheral portion thereof, the holding lead portion 5a is adhered, and the adhesive 15 is applied to the adhesive 15 by heating in a heating atmosphere such as a heater plate 17 and an oven. After performing a heat treatment, the adhesive 15
8, that is, the adhesive 15 in a portion other than the lower portion of the holding lead portion 5a is temporarily cured (in the figure, the hardened portion of the adhesive 15 is hatched), and FIG.
In (b), in addition to heating in a heating atmosphere such as a heater plate 17 and an oven, ultraviolet rays 16 are irradiated,
The adhesive 15 is completely cured. In this step, two-stage curing of heat curing (temporary) + heating / ultraviolet curing (book) is performed. The heating in the temporary curing and the main curing promotes the temporary curing by directly placing the semiconductor chip 1 on the heater plate 17.

As described above, ultraviolet curing (temporary) + thermal curing (book),
UV curing (temporary) + UV curing (book), heat curing (temporary)
Although the two-stage curing of + heat curing (book), heat curing (temporary) + heating / ultraviolet curing (book) has been described, also in the temporary curing step, curing by heat + ultraviolet light is performed, and even in the main curing step, heat +
Curing by ultraviolet rays may be performed.

Next, another embodiment of the step of curing the adhesive after bonding the semiconductor chip and the lead with ultraviolet rays will be described. FIGS. 9 and 10 are cross-sectional views showing a state in which the semiconductor chip and the holding lead portion are bonded with an adhesive and are cured by irradiating ultraviolet rays.

As shown in FIG. 9, by irradiating the ultraviolet rays 16 from multiple directions, the ultraviolet rays 16 are also applied to the adhesive 15 below the holding lead portion 5a, and the curing of the adhesive 15 is accelerated. .

In FIG. 10, a material of a reflective material 18 having a high reflectivity is formed in a region on the semiconductor chip 1 where the adhesive 15 is to be provided, and ultraviolet rays 16 are irradiated from multiple directions, so that the holding lead 5a is formed. UV light 1 on the lower adhesive 15
6 is irradiated to accelerate the curing of the adhesive 15. As the reflective material 18, a metal film such as a nickel (Ni) film or the like having a high reflectivity, which is used in a semiconductor manufacturing process, is formed. In the irradiation of the ultraviolet light 16 from multiple directions, a means can be appropriately selected, such as using a diffusion irradiation type ultraviolet lamp, installing and irradiating the ultraviolet lamp in multiple directions, or irradiating while moving the ultraviolet lamp. .

In the present embodiment, in the step of bonding and fixing the semiconductor chip and the holding lead by using a heat / ultraviolet curable adhesive, mass production is performed by a two-step curing step of temporary curing and main curing. Eliminate the rate limiting in the process,
This improves the production efficiency. Then, in the temporary curing, the surface portion of the adhesive is cured so that it has resistance to impact during transport, and then is fully cured,
UV irradiation and heating are not performed simply to cure the heat / ultraviolet curable adhesive. In temporary curing, ultraviolet irradiation is performed in a spot manner to accelerate curing of the irradiated part. Or to irradiate ultraviolet rays from multiple directions in order to make the adhesive interposed in the lower part of the holding lead part more effective, and to reduce the semiconductor in the part where the adhesive intervenes in the lower part of the holding lead part. A material having a high reflectance is formed on the chip to increase the curing efficiency, and the adhesive under the holding lead portion is also cured by ultraviolet rays. Therefore, in a method of manufacturing a semiconductor device of a type in which a semiconductor chip and a holding lead are bonded and fixed via an adhesive, the method is a method of manufacturing a semiconductor device having effective curing means in a temporary curing step of the adhesive. .

[0053]

As described above, the method of manufacturing a semiconductor device according to the present invention is particularly advantageous in the step of bonding and fixing a semiconductor chip and a holding lead using a heat / ultraviolet curing adhesive. By the two-stage curing process of the main curing, the rate-limiting in the mass production process can be eliminated, and the production efficiency can be improved. Then, in the temporary curing of the adhesive, the surface portion of the adhesive is cured, so that it is resistant to the impact at the time of transport, and thereafter, is fully cured,
UV irradiation and heating are not performed simply to cure the heat / ultraviolet curable adhesive. In temporary curing, ultraviolet irradiation is performed in a spot manner to accelerate curing of the irradiated part. In addition, the semiconductor chip and the holding lead may be bonded to each other by, for example, irradiating ultraviolet rays from multiple directions in order to make the adhesive interposed in the lower portion of the holding lead portion more effective. This is a method for manufacturing a semiconductor device having a method of manufacturing a semiconductor device of a type of bonding and fixing through an intervening process, which has an effective curing means in a temporary curing step of an adhesive.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 2 is a sectional view showing the method for manufacturing the semiconductor device according to the embodiment of the present invention;

FIG. 3 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 4 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 5 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 6 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 7 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 8 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 9 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 10 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 11 is a sectional view showing a conventional method for manufacturing a semiconductor device.

FIG. 12 is a sectional view showing a conventional method for manufacturing a semiconductor device.

FIG. 13 is a sectional view showing a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Stage 3 Adhesive 4 Nozzle 5 Lead frame 6 Stage 7 Heater block 8 Inner lead part 9 Clamper 10 Capillary 11 Fine metal wire 12 Mold 13 Gate opening 14 Sealing resin 15 Adhesive 16 Ultraviolet ray 17 Heater plate 18 Reflective substance

Continued on the front page (72) Inventor Tadahisa Inui, 1006 Kadoma, Kazuma, Osaka Prefecture, Matsushita Electric Industrial Co., Ltd. Person Toru Nomura 1006 Kadoma Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (14)

[Claims] 1. A method of manufacturing a semiconductor device having a structure in which a semiconductor chip is held by a first lead portion of a lead frame via an adhesive, wherein the first lead portion of the lead frame and the semiconductor chip are bonded by an adhesive. And the step of curing the adhesive is a first step of temporarily curing the adhesive.
A method for manufacturing a semiconductor device, comprising: a curing step; and a second curing step of curing the adhesive. 2. A plurality of first lead portions used to support a semiconductor chip, a plurality of inner lead portions for making electrical connection with the semiconductor chip, and a plurality of first lead portions connected to the inner lead portion. A step of preparing a lead frame having an outer lead part; a step of aligning the first lead part and the semiconductor chip; and an step of applying an adhesive between the first lead part and the main surface of the semiconductor chip. Supplying and bonding the semiconductor chip to the first lead; a first curing step of curing the adhesive; a second curing step of curing the adhesive after the first curing step; A semiconductor comprising: a step of electrically connecting the inner lead portion; and a step of exposing the outer lead portion and sealing the outer periphery of the semiconductor chip with a sealing resin. Device manufacturing method. 3. A plurality of first lead portions used to support a semiconductor chip, a plurality of inner lead portions for making an electrical connection with the semiconductor chip, and a plurality of first lead portions connected to the inner lead portion. A step of bending the first lead part at a predetermined angle with respect to a lead frame having an outer lead part; a step of aligning the bent first lead part with the semiconductor chip; A step of supplying an adhesive between the first lead portion and the side surface of the semiconductor chip to adhere the semiconductor chip to the first lead, a first curing step of curing the adhesive, and after the first curing step A second curing step of curing the adhesive, a step of electrically connecting the semiconductor chip to the inner lead, and a step of exposing the outer lead to the semiconductor chip. And sealing the outer periphery with a sealing resin. 4. A plurality of first lead portions used to support a semiconductor chip, a plurality of inner lead portions for making electrical connection with the semiconductor chip, and a plurality of first lead portions connected to the inner lead portion. A step of preparing a lead frame having an outer lead part; a step of aligning the first lead part with the semiconductor chip; and a step of thermosetting between the first lead part and the main surface of the semiconductor chip. Supplying an ultraviolet curable adhesive to adhere the semiconductor chip to the first lead, and forming an adhesive layer and a fillet of the adhesive between the first lead portion and the semiconductor chip; Irradiating the adhesive with ultraviolet rays to cure a fillet portion of the adhesive, and temporarily curing the adhesive; and heating or irradiating ultraviolet rays or a combination thereof after the first curing step. A second curing step of fully curing the adhesive by bonding, a step of electrically connecting the semiconductor chip to the inner lead portion, and exposing the outer lead portion to seal an outer periphery of the semiconductor chip. A method of manufacturing a semiconductor device, comprising a step of sealing with a resin. 5. The method of manufacturing a semiconductor device according to claim 4, wherein the irradiation of the ultraviolet rays focuses on a portion of the adhesive and irradiates the adhesive in spots. 6. The method of manufacturing a semiconductor device according to claim 4, wherein the irradiation of the ultraviolet ray irradiates the adhesive portion with the ultraviolet ray from multiple directions. 7. The method for manufacturing a semiconductor device according to claim 4, wherein a material having a high reflectance is formed on a surface of the semiconductor chip. 8. The method for manufacturing a semiconductor device according to claim 1, wherein the adhesive is a thermosetting and ultraviolet-curable adhesive. 9. In the step of bonding the semiconductor chip and the first lead portion with an adhesive, 600 [poise] to 1 [poise].
3. The method for manufacturing a semiconductor device according to claim 1, wherein the bonding is performed with an adhesive having a viscosity of 500 [poise]. 10. A step of bonding a side surface of a semiconductor chip and a first lead portion with an adhesive, wherein forming a fillet of the adhesive in a region between a tip portion of the first lead portion and the semiconductor chip. Claims 1 to 3
The method for manufacturing a semiconductor device according to any one of the above. 11. The semiconductor device according to claim 1, wherein the first curing step performs light curing by irradiating ultraviolet rays, and the second curing step performs heat curing by heating. Manufacturing method. 12. The semiconductor according to claim 1, wherein the first curing step performs light curing by irradiation with ultraviolet light, and the second curing step performs light curing by irradiation with ultraviolet light. Device manufacturing method. 13. The semiconductor device according to claim 1, wherein the first curing step performs heat curing by heating, and the second curing step performs heat curing by heating. Production method. 14. The method according to claim 1, wherein the first curing step performs heat curing by heating, and the second curing step performs heat curing by heating and light curing by irradiation with ultraviolet rays.
The method for manufacturing a semiconductor device according to any one of the above.