JPH1145842A - 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法 - Google Patents

投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法

Info

Publication number
JPH1145842A
JPH1145842A JP9198154A JP19815497A JPH1145842A JP H1145842 A JPH1145842 A JP H1145842A JP 9198154 A JP9198154 A JP 9198154A JP 19815497 A JP19815497 A JP 19815497A JP H1145842 A JPH1145842 A JP H1145842A
Authority
JP
Japan
Prior art keywords
image
projection
optical system
projection optical
illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9198154A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1145842A5 (enExample
Inventor
Takechika Nishi
健爾 西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP9198154A priority Critical patent/JPH1145842A/ja
Priority to AU83573/98A priority patent/AU8357398A/en
Priority to PCT/JP1998/003305 priority patent/WO1999005709A1/ja
Priority to EP98933919A priority patent/EP1024522A4/en
Publication of JPH1145842A publication Critical patent/JPH1145842A/ja
Priority to US09/502,042 priority patent/US6522386B1/en
Priority to US10/321,597 priority patent/US20030128344A1/en
Publication of JPH1145842A5 publication Critical patent/JPH1145842A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP9198154A 1997-07-24 1997-07-24 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法 Withdrawn JPH1145842A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP9198154A JPH1145842A (ja) 1997-07-24 1997-07-24 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法
AU83573/98A AU8357398A (en) 1997-07-24 1998-07-24 Exposure method and aligner
PCT/JP1998/003305 WO1999005709A1 (en) 1997-07-24 1998-07-24 Exposure method and aligner
EP98933919A EP1024522A4 (en) 1997-07-24 1998-07-24 ALIGNMENT DEVICE AND EXPOSURE METHOD
US09/502,042 US6522386B1 (en) 1997-07-24 2000-02-11 Exposure apparatus having projection optical system with aberration correction element
US10/321,597 US20030128344A1 (en) 1997-07-24 2002-12-18 Exposure method, exposure apparatus, method for adjusting the exposure apparatus, and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9198154A JPH1145842A (ja) 1997-07-24 1997-07-24 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法

Publications (2)

Publication Number Publication Date
JPH1145842A true JPH1145842A (ja) 1999-02-16
JPH1145842A5 JPH1145842A5 (enExample) 2005-05-19

Family

ID=16386369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9198154A Withdrawn JPH1145842A (ja) 1997-07-24 1997-07-24 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法

Country Status (4)

Country Link
EP (1) EP1024522A4 (enExample)
JP (1) JPH1145842A (enExample)
AU (1) AU8357398A (enExample)
WO (1) WO1999005709A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002015987A (ja) * 2000-04-12 2002-01-18 Nikon Corp 露光装置、露光装置の製造方法及びマイクロデバイスの製造方法
US6710930B2 (en) 1999-12-01 2004-03-23 Nikon Corporation Illumination optical system and method of making exposure apparatus
US6738128B2 (en) 2002-04-02 2004-05-18 Canon Kabushiki Kaisha Exposure apparatus
US7016012B2 (en) 2002-12-05 2006-03-21 Canon Kabushiki Kaisha Exposure apparatus
US7154581B2 (en) 2002-01-08 2006-12-26 Canon Kabushiki Kaisha Scanning exposure apparatus, manufacturing method thereof, and device manufacturing method
JP2009540586A (ja) * 2006-06-16 2009-11-19 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィ投影露光装置の投影対物器械
JP2010535423A (ja) * 2007-08-03 2010-11-18 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィのための投影対物系、投影露光装置、投影露光方法、及び光学補正プレート
JP2014237282A (ja) * 2013-06-10 2014-12-18 キヤノン株式会社 液体吐出ヘッドの製造方法
US8921798B2 (en) 2012-08-10 2014-12-30 Hitachi High-Technologies Corporation Defect inspection apparatus and defect inspection method

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373552B1 (en) 1999-01-20 2002-04-16 Asm Lithography B.V. Optical correction plate, and its application in a lithographic projection apparatus
JP2002184667A (ja) 2000-12-14 2002-06-28 Nikon Corp 補正部材の製造方法、投影光学系の製造方法および露光装置の調整方法
JP3626448B2 (ja) 2001-11-28 2005-03-09 株式会社東芝 露光方法
JP3652329B2 (ja) * 2002-06-28 2005-05-25 キヤノン株式会社 走査露光装置、走査露光方法、デバイス製造方法およびデバイス
KR101117429B1 (ko) 2003-10-31 2012-04-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP5629050B2 (ja) 2004-06-10 2014-11-19 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置のための投影対物レンズ
EP1746463A2 (de) 2005-07-01 2007-01-24 Carl Zeiss SMT AG Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv
EP3540743A1 (en) * 2018-03-16 2019-09-18 Deutsches Elektronen-Synchrotron DESY Method for manufacturing of a pre-aligned x-ray optical correction plate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3374991B2 (ja) * 1993-06-14 2003-02-10 株式会社ニコン 投影光学系の調整方法、露光方法、及び露光装置
JPH088157A (ja) * 1994-06-16 1996-01-12 Nikon Corp 投影露光装置
JPH0766110A (ja) * 1993-08-31 1995-03-10 Toshiba Corp 補正用プリズム機器及びこれを用いた露光装置
JP3555233B2 (ja) * 1995-04-13 2004-08-18 株式会社ニコン 投影露光装置
US6333776B1 (en) * 1994-03-29 2001-12-25 Nikon Corporation Projection exposure apparatus
JPH0992601A (ja) * 1995-09-26 1997-04-04 Nikon Corp 投影露光装置
JPH08124831A (ja) * 1994-10-25 1996-05-17 Toshiba Corp 倍率補正装置及びこれを適用した露光装置
JPH1027743A (ja) * 1996-07-11 1998-01-27 Canon Inc 投影露光装置、デバイス製造方法及び収差補正光学系

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6710930B2 (en) 1999-12-01 2004-03-23 Nikon Corporation Illumination optical system and method of making exposure apparatus
JP2002015987A (ja) * 2000-04-12 2002-01-18 Nikon Corp 露光装置、露光装置の製造方法及びマイクロデバイスの製造方法
US7154581B2 (en) 2002-01-08 2006-12-26 Canon Kabushiki Kaisha Scanning exposure apparatus, manufacturing method thereof, and device manufacturing method
US6738128B2 (en) 2002-04-02 2004-05-18 Canon Kabushiki Kaisha Exposure apparatus
US7016012B2 (en) 2002-12-05 2006-03-21 Canon Kabushiki Kaisha Exposure apparatus
US8325426B2 (en) 2006-06-16 2012-12-04 Carl Zeiss Smt Gmbh Projection objective of a microlithographic projection exposure apparatus
JP2009540586A (ja) * 2006-06-16 2009-11-19 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィ投影露光装置の投影対物器械
JP2010535423A (ja) * 2007-08-03 2010-11-18 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィのための投影対物系、投影露光装置、投影露光方法、及び光学補正プレート
JP2014075610A (ja) * 2007-08-03 2014-04-24 Carl Zeiss Smt Gmbh マイクロリソグラフィのための投影対物系、投影露光装置、投影露光方法、及び光学補正プレート
JP2016042192A (ja) * 2007-08-03 2016-03-31 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影対物系、投影露光装置、投影露光方法、及び光学補正プレート
US8921798B2 (en) 2012-08-10 2014-12-30 Hitachi High-Technologies Corporation Defect inspection apparatus and defect inspection method
US9194795B2 (en) 2012-08-10 2015-11-24 Hitachi High-Technologies Corporation Defect inspection apparatus and defect inspection method
JP2014237282A (ja) * 2013-06-10 2014-12-18 キヤノン株式会社 液体吐出ヘッドの製造方法

Also Published As

Publication number Publication date
WO1999005709A1 (en) 1999-02-04
EP1024522A1 (en) 2000-08-02
EP1024522A4 (en) 2004-08-18
AU8357398A (en) 1999-02-16

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