JPH11330236A - 多層配線を有する電子装置及びその製造方法 - Google Patents
多層配線を有する電子装置及びその製造方法Info
- Publication number
- JPH11330236A JPH11330236A JP12889098A JP12889098A JPH11330236A JP H11330236 A JPH11330236 A JP H11330236A JP 12889098 A JP12889098 A JP 12889098A JP 12889098 A JP12889098 A JP 12889098A JP H11330236 A JPH11330236 A JP H11330236A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive material
- wiring
- material layer
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 95
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims description 159
- 239000010936 titanium Substances 0.000 claims description 88
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 81
- 238000000151 deposition Methods 0.000 claims description 50
- 239000010949 copper Substances 0.000 claims description 40
- 238000004544 sputter deposition Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 26
- 238000005229 chemical vapour deposition Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000003870 refractory metal Substances 0.000 claims description 5
- 229910018182 Al—Cu Inorganic materials 0.000 abstract description 65
- 230000008569 process Effects 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 230000004907 flux Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 549
- 125000004429 atom Chemical group 0.000 description 51
- 238000010438 heat treatment Methods 0.000 description 22
- 238000001312 dry etching Methods 0.000 description 17
- 238000000206 photolithography Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000005012 migration Effects 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12889098A JPH11330236A (ja) | 1998-05-12 | 1998-05-12 | 多層配線を有する電子装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12889098A JPH11330236A (ja) | 1998-05-12 | 1998-05-12 | 多層配線を有する電子装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11330236A true JPH11330236A (ja) | 1999-11-30 |
| JPH11330236A5 JPH11330236A5 (enrdf_load_html_response) | 2005-09-29 |
Family
ID=14995889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12889098A Withdrawn JPH11330236A (ja) | 1998-05-12 | 1998-05-12 | 多層配線を有する電子装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11330236A (enrdf_load_html_response) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002305269A (ja) * | 2001-04-09 | 2002-10-18 | Toppan Printing Co Ltd | 多層配線基板及びその製造方法 |
| US6492735B1 (en) | 1999-09-21 | 2002-12-10 | Nec Corporation | Semiconductor device with alloy film between barrier metal and interconnect |
| JP2008270509A (ja) * | 2007-04-20 | 2008-11-06 | Nec Electronics Corp | 半導体装置の製造方法 |
| US7521352B2 (en) | 2006-04-28 | 2009-04-21 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device |
| JP2011249483A (ja) * | 2010-05-25 | 2011-12-08 | Fujitsu Ltd | 配線回路基板及びその製造方法 |
| JP2014179545A (ja) * | 2013-03-15 | 2014-09-25 | Asahi Kasei Electronics Co Ltd | 半導体装置の製造方法および半導体装置 |
-
1998
- 1998-05-12 JP JP12889098A patent/JPH11330236A/ja not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6492735B1 (en) | 1999-09-21 | 2002-12-10 | Nec Corporation | Semiconductor device with alloy film between barrier metal and interconnect |
| US6607978B2 (en) | 1999-09-21 | 2003-08-19 | Nec Electronics Corporation | Method of making a semiconductor device with alloy film between barrier metal and interconnect |
| JP2002305269A (ja) * | 2001-04-09 | 2002-10-18 | Toppan Printing Co Ltd | 多層配線基板及びその製造方法 |
| US7521352B2 (en) | 2006-04-28 | 2009-04-21 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device |
| JP2008270509A (ja) * | 2007-04-20 | 2008-11-06 | Nec Electronics Corp | 半導体装置の製造方法 |
| JP2011249483A (ja) * | 2010-05-25 | 2011-12-08 | Fujitsu Ltd | 配線回路基板及びその製造方法 |
| JP2014179545A (ja) * | 2013-03-15 | 2014-09-25 | Asahi Kasei Electronics Co Ltd | 半導体装置の製造方法および半導体装置 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Effective date: 20050425 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A621 | Written request for application examination |
Effective date: 20050425 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20090106 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090217 |