JPH11265947A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPH11265947A
JPH11265947A JP10066898A JP6689898A JPH11265947A JP H11265947 A JPH11265947 A JP H11265947A JP 10066898 A JP10066898 A JP 10066898A JP 6689898 A JP6689898 A JP 6689898A JP H11265947 A JPH11265947 A JP H11265947A
Authority
JP
Japan
Prior art keywords
region
diffusion region
insulating film
ion implantation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10066898A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11265947A5 (https=
Inventor
Satoshi Takahashi
聡 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10066898A priority Critical patent/JPH11265947A/ja
Priority to US09/160,046 priority patent/US6507068B2/en
Publication of JPH11265947A publication Critical patent/JPH11265947A/ja
Publication of JPH11265947A5 publication Critical patent/JPH11265947A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP10066898A 1998-03-17 1998-03-17 半導体装置およびその製造方法 Pending JPH11265947A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10066898A JPH11265947A (ja) 1998-03-17 1998-03-17 半導体装置およびその製造方法
US09/160,046 US6507068B2 (en) 1998-03-17 1998-09-25 Flash memory device and a fabrication process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10066898A JPH11265947A (ja) 1998-03-17 1998-03-17 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005096274A Division JP2005229128A (ja) 2005-03-29 2005-03-29 半導体装置

Publications (2)

Publication Number Publication Date
JPH11265947A true JPH11265947A (ja) 1999-09-28
JPH11265947A5 JPH11265947A5 (https=) 2005-09-08

Family

ID=13329222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10066898A Pending JPH11265947A (ja) 1998-03-17 1998-03-17 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US6507068B2 (https=)
JP (1) JPH11265947A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064375B2 (en) 2002-10-29 2006-06-20 Kabushiki Kaisha Toshiba Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereof
US7621157B2 (en) * 2005-04-01 2009-11-24 Askoll Holding S.R.L. Washing-machine and similar household appliances with rotary drum

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101063690B1 (ko) * 2008-11-21 2011-09-14 주식회사 동부하이텍 반도체 소자 및 그 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5836508B2 (ja) * 1980-12-25 1983-08-09 富士通株式会社 半導体装置の製造方法
US5270240A (en) * 1991-07-10 1993-12-14 Micron Semiconductor, Inc. Four poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline silicon digit lines
US5482881A (en) * 1995-03-14 1996-01-09 Advanced Micro Devices, Inc. Method of making flash EEPROM memory with reduced column leakage current
JPH0982924A (ja) * 1995-09-14 1997-03-28 Toshiba Corp 半導体記憶装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064375B2 (en) 2002-10-29 2006-06-20 Kabushiki Kaisha Toshiba Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereof
US7621157B2 (en) * 2005-04-01 2009-11-24 Askoll Holding S.R.L. Washing-machine and similar household appliances with rotary drum

Also Published As

Publication number Publication date
US20010019149A1 (en) 2001-09-06
US6507068B2 (en) 2003-01-14

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