JPH11233899A5 - - Google Patents

Info

Publication number
JPH11233899A5
JPH11233899A5 JP1998345734A JP34573498A JPH11233899A5 JP H11233899 A5 JPH11233899 A5 JP H11233899A5 JP 1998345734 A JP1998345734 A JP 1998345734A JP 34573498 A JP34573498 A JP 34573498A JP H11233899 A5 JPH11233899 A5 JP H11233899A5
Authority
JP
Japan
Prior art keywords
mirror region
region
mounting substrate
vcsel
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998345734A
Other languages
English (en)
Japanese (ja)
Other versions
JP4359354B2 (ja
JPH11233899A (ja
Filing date
Publication date
Priority claimed from US08/993,006 external-priority patent/US6188711B1/en
Application filed filed Critical
Publication of JPH11233899A publication Critical patent/JPH11233899A/ja
Publication of JPH11233899A5 publication Critical patent/JPH11233899A5/ja
Application granted granted Critical
Publication of JP4359354B2 publication Critical patent/JP4359354B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP34573498A 1997-12-18 1998-12-04 Ｖｃｓｅｌアセンブリとその製造方法 Expired - Fee Related JP4359354B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/993,006 US6188711B1 (en) 1997-12-18 1997-12-18 Polarization-controlled VCSELs using externally applied uniaxial stress
US993,006 1997-12-18

Publications (3)

Publication Number Publication Date
JPH11233899A JPH11233899A (ja) 1999-08-27
JPH11233899A5 true JPH11233899A5 (OSRAM) 2006-03-23
JP4359354B2 JP4359354B2 (ja) 2009-11-04

Family

ID=25538997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34573498A Expired - Fee Related JP4359354B2 (ja) 1997-12-18 1998-12-04 Ｖｃｓｅｌアセンブリとその製造方法

Country Status (4)

Country Link
US (1) US6188711B1 (OSRAM)
EP (1) EP0924820B1 (OSRAM)
JP (1) JP4359354B2 (OSRAM)
DE (1) DE69805597T2 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
JP3482824B2 (ja) * 1997-07-29 2004-01-06 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
US7004644B1 (en) * 1999-06-29 2006-02-28 Finisar Corporation Hermetic chip-scale package for photonic devices
EP1104056A1 (en) * 1999-11-18 2001-05-30 Avalon Photonics Ltd A polarization controlled vertical-cavity surface-emitting laser
JP3944677B2 (ja) * 1999-11-30 2007-07-11 セイコーエプソン株式会社 面発光型半導体レーザの製造方法
IL145245A0 (en) 2001-09-03 2002-06-30 Jtc 2000 Dev Delaware Inc System and method including vector-matrix multiplication
US6785317B2 (en) * 2001-09-10 2004-08-31 Vrije Universiteit Brussels Enhanced polarization control and stabilization by macroscopic in-plane anisotropic strain in vertical-cavity surface-emitting lasers
GB2379797A (en) * 2001-09-15 2003-03-19 Zarlink Semiconductor Ab Surface Emitting Laser
DE10253908B4 (de) * 2002-09-24 2010-04-22 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP4687064B2 (ja) * 2004-10-22 2011-05-25 ソニー株式会社 面発光型半導体レーザ素子
JP5376104B2 (ja) * 2005-07-04 2013-12-25 ソニー株式会社 面発光型半導体レーザ
WO2013123241A1 (en) 2012-02-17 2013-08-22 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates
WO2014015337A2 (en) * 2012-07-20 2014-01-23 The Regents Of The University Of California Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
DE102012021169B4 (de) * 2012-10-29 2015-02-12 Dausinger & Giesen Gmbh Laserverstärkersystem mit angeklebter Festkörperscheibe
JP6786961B2 (ja) * 2016-08-29 2020-11-18 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
DK3791451T3 (da) * 2018-05-11 2025-03-03 Excelitas Tech Corp Polarisationsstyring af afstembar vcsel ved hjælp af ikke-ensartede chipbindinger
DE102021212985A1 (de) * 2021-11-18 2023-05-25 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Kamera und Kamera

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4474422A (en) 1979-11-13 1984-10-02 Canon Kabushiki Kaisha Optical scanning apparatus having an array of light sources
WO1992021069A1 (fr) 1991-05-14 1992-11-26 Seiko Epson Corporation Dispositif de formation d'image
JP2875929B2 (ja) 1992-10-09 1999-03-31 シャープ株式会社 半導体レーザ素子およびその製造方法
JPH0773139B2 (ja) 1993-01-26 1995-08-02 日本電気株式会社 面発光半導体レーザ
US5331654A (en) 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US5416044A (en) 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
US5345462A (en) 1993-03-29 1994-09-06 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity
JP3477744B2 (ja) 1993-06-23 2003-12-10 ソニー株式会社 発光装置及びこれを用いた立体視覚装置及びその視覚方法及びその駆動方法
US5412680A (en) 1994-03-18 1995-05-02 Photonics Research Incorporated Linear polarization of semiconductor laser
US5892784A (en) 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate
US5493577A (en) 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
JPH0964462A (ja) 1995-08-24 1997-03-07 Nec Corp 面発光レーザ装置およびその製造方法
GB9709949D0 (en) 1997-05-17 1997-07-09 Dowd Philip Vertical-cavity surface-emitting laser polarisation control
JP3482824B2 (ja) 1997-07-29 2004-01-06 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
US6002705A (en) * 1997-12-03 1999-12-14 Xerox Corporation Wavelength and polarization multiplexed vertical cavity surface emitting lasers
US5953362A (en) * 1997-12-15 1999-09-14 Pamulapati; Jagadeesh Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same

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