DE69805597T2 - Polarisationsgesteuerte VCSELs mittels von aussen angelegter uniaxialer Verspannung - Google Patents

Polarisationsgesteuerte VCSELs mittels von aussen angelegter uniaxialer Verspannung

Info

Publication number
DE69805597T2
DE69805597T2 DE69805597T DE69805597T DE69805597T2 DE 69805597 T2 DE69805597 T2 DE 69805597T2 DE 69805597 T DE69805597 T DE 69805597T DE 69805597 T DE69805597 T DE 69805597T DE 69805597 T2 DE69805597 T2 DE 69805597T2
Authority
DE
Germany
Prior art keywords
region
vcsel
mounting substrate
axis
mirror region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69805597T
Other languages
German (de)
English (en)
Other versions
DE69805597D1 (de
Inventor
Dubravko I. Babic
Scott W. Corzine
Michael R.T. Tan
Albert T. Yeun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE69805597D1 publication Critical patent/DE69805597D1/de
Publication of DE69805597T2 publication Critical patent/DE69805597T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69805597T 1997-12-18 1998-09-29 Polarisationsgesteuerte VCSELs mittels von aussen angelegter uniaxialer Verspannung Expired - Lifetime DE69805597T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/993,006 US6188711B1 (en) 1997-12-18 1997-12-18 Polarization-controlled VCSELs using externally applied uniaxial stress

Publications (2)

Publication Number Publication Date
DE69805597D1 DE69805597D1 (de) 2002-07-04
DE69805597T2 true DE69805597T2 (de) 2003-01-16

Family

ID=25538997

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69805597T Expired - Lifetime DE69805597T2 (de) 1997-12-18 1998-09-29 Polarisationsgesteuerte VCSELs mittels von aussen angelegter uniaxialer Verspannung

Country Status (4)

Country Link
US (1) US6188711B1 (OSRAM)
EP (1) EP0924820B1 (OSRAM)
JP (1) JP4359354B2 (OSRAM)
DE (1) DE69805597T2 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
JP3482824B2 (ja) * 1997-07-29 2004-01-06 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
US7004644B1 (en) * 1999-06-29 2006-02-28 Finisar Corporation Hermetic chip-scale package for photonic devices
EP1104056A1 (en) * 1999-11-18 2001-05-30 Avalon Photonics Ltd A polarization controlled vertical-cavity surface-emitting laser
JP3944677B2 (ja) * 1999-11-30 2007-07-11 セイコーエプソン株式会社 面発光型半導体レーザの製造方法
IL145245A0 (en) 2001-09-03 2002-06-30 Jtc 2000 Dev Delaware Inc System and method including vector-matrix multiplication
US6785317B2 (en) * 2001-09-10 2004-08-31 Vrije Universiteit Brussels Enhanced polarization control and stabilization by macroscopic in-plane anisotropic strain in vertical-cavity surface-emitting lasers
GB2379797A (en) * 2001-09-15 2003-03-19 Zarlink Semiconductor Ab Surface Emitting Laser
DE10253908B4 (de) * 2002-09-24 2010-04-22 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP4687064B2 (ja) * 2004-10-22 2011-05-25 ソニー株式会社 面発光型半導体レーザ素子
JP5376104B2 (ja) * 2005-07-04 2013-12-25 ソニー株式会社 面発光型半導体レーザ
WO2013123241A1 (en) 2012-02-17 2013-08-22 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates
WO2014015337A2 (en) * 2012-07-20 2014-01-23 The Regents Of The University Of California Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
DE102012021169B4 (de) * 2012-10-29 2015-02-12 Dausinger & Giesen Gmbh Laserverstärkersystem mit angeklebter Festkörperscheibe
JP6786961B2 (ja) * 2016-08-29 2020-11-18 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
DK3791451T3 (da) * 2018-05-11 2025-03-03 Excelitas Tech Corp Polarisationsstyring af afstembar vcsel ved hjælp af ikke-ensartede chipbindinger
DE102021212985A1 (de) * 2021-11-18 2023-05-25 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Kamera und Kamera

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4474422A (en) 1979-11-13 1984-10-02 Canon Kabushiki Kaisha Optical scanning apparatus having an array of light sources
WO1992021069A1 (fr) 1991-05-14 1992-11-26 Seiko Epson Corporation Dispositif de formation d'image
JP2875929B2 (ja) 1992-10-09 1999-03-31 シャープ株式会社 半導体レーザ素子およびその製造方法
JPH0773139B2 (ja) 1993-01-26 1995-08-02 日本電気株式会社 面発光半導体レーザ
US5331654A (en) 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US5416044A (en) 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
US5345462A (en) 1993-03-29 1994-09-06 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity
JP3477744B2 (ja) 1993-06-23 2003-12-10 ソニー株式会社 発光装置及びこれを用いた立体視覚装置及びその視覚方法及びその駆動方法
US5412680A (en) 1994-03-18 1995-05-02 Photonics Research Incorporated Linear polarization of semiconductor laser
US5892784A (en) 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate
US5493577A (en) 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
JPH0964462A (ja) 1995-08-24 1997-03-07 Nec Corp 面発光レーザ装置およびその製造方法
GB9709949D0 (en) 1997-05-17 1997-07-09 Dowd Philip Vertical-cavity surface-emitting laser polarisation control
JP3482824B2 (ja) 1997-07-29 2004-01-06 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
US6002705A (en) * 1997-12-03 1999-12-14 Xerox Corporation Wavelength and polarization multiplexed vertical cavity surface emitting lasers
US5953362A (en) * 1997-12-15 1999-09-14 Pamulapati; Jagadeesh Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same

Also Published As

Publication number Publication date
EP0924820A3 (en) 1999-07-14
EP0924820A2 (en) 1999-06-23
EP0924820B1 (en) 2002-05-29
JP4359354B2 (ja) 2009-11-04
JPH11233899A (ja) 1999-08-27
US6188711B1 (en) 2001-02-13
DE69805597D1 (de) 2002-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.,