JP4359354B2 - Vcselアセンブリとその製造方法 - Google Patents
Vcselアセンブリとその製造方法 Download PDFInfo
- Publication number
- JP4359354B2 JP4359354B2 JP34573498A JP34573498A JP4359354B2 JP 4359354 B2 JP4359354 B2 JP 4359354B2 JP 34573498 A JP34573498 A JP 34573498A JP 34573498 A JP34573498 A JP 34573498A JP 4359354 B2 JP4359354 B2 JP 4359354B2
- Authority
- JP
- Japan
- Prior art keywords
- vcsel
- mounting substrate
- region
- mirror region
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims description 68
- 239000010410 layer Substances 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000010287 polarization Effects 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/993,006 US6188711B1 (en) | 1997-12-18 | 1997-12-18 | Polarization-controlled VCSELs using externally applied uniaxial stress |
| US993,006 | 1997-12-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11233899A JPH11233899A (ja) | 1999-08-27 |
| JPH11233899A5 JPH11233899A5 (OSRAM) | 2006-03-23 |
| JP4359354B2 true JP4359354B2 (ja) | 2009-11-04 |
Family
ID=25538997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34573498A Expired - Fee Related JP4359354B2 (ja) | 1997-12-18 | 1998-12-04 | Vcselアセンブリとその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6188711B1 (OSRAM) |
| EP (1) | EP0924820B1 (OSRAM) |
| JP (1) | JP4359354B2 (OSRAM) |
| DE (1) | DE69805597T2 (OSRAM) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6304588B1 (en) * | 1997-02-07 | 2001-10-16 | Xerox Corporation | Method and structure for eliminating polarization instability in laterally-oxidized VCSELs |
| JP3482824B2 (ja) * | 1997-07-29 | 2004-01-06 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
| US7004644B1 (en) * | 1999-06-29 | 2006-02-28 | Finisar Corporation | Hermetic chip-scale package for photonic devices |
| EP1104056A1 (en) * | 1999-11-18 | 2001-05-30 | Avalon Photonics Ltd | A polarization controlled vertical-cavity surface-emitting laser |
| JP3944677B2 (ja) * | 1999-11-30 | 2007-07-11 | セイコーエプソン株式会社 | 面発光型半導体レーザの製造方法 |
| IL145245A0 (en) | 2001-09-03 | 2002-06-30 | Jtc 2000 Dev Delaware Inc | System and method including vector-matrix multiplication |
| US6785317B2 (en) * | 2001-09-10 | 2004-08-31 | Vrije Universiteit Brussels | Enhanced polarization control and stabilization by macroscopic in-plane anisotropic strain in vertical-cavity surface-emitting lasers |
| GB2379797A (en) * | 2001-09-15 | 2003-03-19 | Zarlink Semiconductor Ab | Surface Emitting Laser |
| DE10253908B4 (de) * | 2002-09-24 | 2010-04-22 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
| US7372886B2 (en) * | 2004-06-07 | 2008-05-13 | Avago Technologies Fiber Ip Pte Ltd | High thermal conductivity vertical cavity surface emitting laser (VCSEL) |
| JP4687064B2 (ja) * | 2004-10-22 | 2011-05-25 | ソニー株式会社 | 面発光型半導体レーザ素子 |
| JP5376104B2 (ja) * | 2005-07-04 | 2013-12-25 | ソニー株式会社 | 面発光型半導体レーザ |
| WO2013123241A1 (en) | 2012-02-17 | 2013-08-22 | The Regents Of The University Of California | Method for the reuse of gallium nitride epitaxial substrates |
| WO2014015337A2 (en) * | 2012-07-20 | 2014-01-23 | The Regents Of The University Of California | Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser |
| DE102012021169B4 (de) * | 2012-10-29 | 2015-02-12 | Dausinger & Giesen Gmbh | Laserverstärkersystem mit angeklebter Festkörperscheibe |
| JP6786961B2 (ja) * | 2016-08-29 | 2020-11-18 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
| DK3791451T3 (da) * | 2018-05-11 | 2025-03-03 | Excelitas Tech Corp | Polarisationsstyring af afstembar vcsel ved hjælp af ikke-ensartede chipbindinger |
| DE102021212985A1 (de) * | 2021-11-18 | 2023-05-25 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Kamera und Kamera |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4474422A (en) | 1979-11-13 | 1984-10-02 | Canon Kabushiki Kaisha | Optical scanning apparatus having an array of light sources |
| WO1992021069A1 (fr) | 1991-05-14 | 1992-11-26 | Seiko Epson Corporation | Dispositif de formation d'image |
| JP2875929B2 (ja) | 1992-10-09 | 1999-03-31 | シャープ株式会社 | 半導体レーザ素子およびその製造方法 |
| JPH0773139B2 (ja) | 1993-01-26 | 1995-08-02 | 日本電気株式会社 | 面発光半導体レーザ |
| US5331654A (en) | 1993-03-05 | 1994-07-19 | Photonics Research Incorporated | Polarized surface-emitting laser |
| US5416044A (en) | 1993-03-12 | 1995-05-16 | Matsushita Electric Industrial Co., Ltd. | Method for producing a surface-emitting laser |
| US5345462A (en) | 1993-03-29 | 1994-09-06 | At&T Bell Laboratories | Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity |
| JP3477744B2 (ja) | 1993-06-23 | 2003-12-10 | ソニー株式会社 | 発光装置及びこれを用いた立体視覚装置及びその視覚方法及びその駆動方法 |
| US5412680A (en) | 1994-03-18 | 1995-05-02 | Photonics Research Incorporated | Linear polarization of semiconductor laser |
| US5892784A (en) | 1994-10-27 | 1999-04-06 | Hewlett-Packard Company | N-drive p-common surface emitting laser fabricated on n+ substrate |
| US5493577A (en) | 1994-12-21 | 1996-02-20 | Sandia Corporation | Efficient semiconductor light-emitting device and method |
| JPH0964462A (ja) | 1995-08-24 | 1997-03-07 | Nec Corp | 面発光レーザ装置およびその製造方法 |
| GB9709949D0 (en) | 1997-05-17 | 1997-07-09 | Dowd Philip | Vertical-cavity surface-emitting laser polarisation control |
| JP3482824B2 (ja) | 1997-07-29 | 2004-01-06 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
| US6002705A (en) * | 1997-12-03 | 1999-12-14 | Xerox Corporation | Wavelength and polarization multiplexed vertical cavity surface emitting lasers |
| US5953362A (en) * | 1997-12-15 | 1999-09-14 | Pamulapati; Jagadeesh | Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same |
-
1997
- 1997-12-18 US US08/993,006 patent/US6188711B1/en not_active Expired - Lifetime
-
1998
- 1998-09-29 EP EP98118381A patent/EP0924820B1/en not_active Expired - Lifetime
- 1998-09-29 DE DE69805597T patent/DE69805597T2/de not_active Expired - Lifetime
- 1998-12-04 JP JP34573498A patent/JP4359354B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0924820A3 (en) | 1999-07-14 |
| DE69805597T2 (de) | 2003-01-16 |
| EP0924820A2 (en) | 1999-06-23 |
| EP0924820B1 (en) | 2002-05-29 |
| JPH11233899A (ja) | 1999-08-27 |
| US6188711B1 (en) | 2001-02-13 |
| DE69805597D1 (de) | 2002-07-04 |
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