WO2004027878A3 - Dispositif semiconducteur de puissance quasi-vertical sur substrat composite - Google Patents

Dispositif semiconducteur de puissance quasi-vertical sur substrat composite Download PDF

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Publication number
WO2004027878A3
WO2004027878A3 PCT/FR2003/050045 FR0350045W WO2004027878A3 WO 2004027878 A3 WO2004027878 A3 WO 2004027878A3 FR 0350045 W FR0350045 W FR 0350045W WO 2004027878 A3 WO2004027878 A3 WO 2004027878A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor material
support substrate
semiconductor device
power semiconductor
quasi
Prior art date
Application number
PCT/FR2003/050045
Other languages
English (en)
Other versions
WO2004027878A2 (fr
Inventor
Francois Templier
Cioccio Lea Di
Thierry Billon
Fabrice Letertre
Original Assignee
Commissariat Energie Atomique
Soitec Silicon On Insulator
Francois Templier
Cioccio Lea Di
Thierry Billon
Fabrice Letertre
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Soitec Silicon On Insulator, Francois Templier, Cioccio Lea Di, Thierry Billon, Fabrice Letertre filed Critical Commissariat Energie Atomique
Priority to US10/526,641 priority Critical patent/US20050258483A1/en
Priority to EP03780259A priority patent/EP1535346A2/fr
Priority to JP2004537241A priority patent/JP2005537679A/ja
Publication of WO2004027878A2 publication Critical patent/WO2004027878A2/fr
Publication of WO2004027878A3 publication Critical patent/WO2004027878A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un dispositif semiconducteur de puissance réalisé dans du matériau semiconducteur épitaxié sur une structure empilée (10) comprenant une couche de matériau semiconducteur (13) reportée sur une première face d'un substrat support (11) et solidaire du substrat support par l'intermédiaire d'une couche isolante (12), le substrat support comprenant des moyens de conduction électrique entre la première face et une deuxième face, la couche de matériau semiconducteur reportée (13) servant de support d'épitaxie pour le matériau semiconducteur épitaxié (14, 15) . Des moyens de connexion électrique (16, 17) du dispositif sont prévus, d'une part sur le matériau semiconducteur épitaxié, et d'autre part, sur la deuxième face du substrat support, une liaison électrique au travers de la couche électriquement isolante et les moyens de conduction électrique du substrat support reliant électriquement le matériau semiconducteur épitaxié (14, 15) aux moyens de connexion électrique (17) prévus sur la deuxième face du substrat support (11).
PCT/FR2003/050045 2002-09-03 2003-09-01 Dispositif semiconducteur de puissance quasi-vertical sur substrat composite WO2004027878A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/526,641 US20050258483A1 (en) 2002-09-03 2003-09-01 Quasi-vertical power semiconductor device on a composite substrate
EP03780259A EP1535346A2 (fr) 2002-09-03 2003-09-01 Dispositif semiconducteur de puissance quasi-vertical sur substrat composite
JP2004537241A JP2005537679A (ja) 2002-09-03 2003-09-01 複合基板上の準縦型パワー半導体デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR02/10883 2002-09-03
FR0210883A FR2844099B1 (fr) 2002-09-03 2002-09-03 Dispositif semiconducteur de puissance quasi-vertical sur substrat composite

Publications (2)

Publication Number Publication Date
WO2004027878A2 WO2004027878A2 (fr) 2004-04-01
WO2004027878A3 true WO2004027878A3 (fr) 2004-05-06

Family

ID=31503070

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/050045 WO2004027878A2 (fr) 2002-09-03 2003-09-01 Dispositif semiconducteur de puissance quasi-vertical sur substrat composite

Country Status (6)

Country Link
US (1) US20050258483A1 (fr)
EP (1) EP1535346A2 (fr)
JP (1) JP2005537679A (fr)
FR (1) FR2844099B1 (fr)
TW (1) TW200410312A (fr)
WO (1) WO2004027878A2 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
US7436039B2 (en) * 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
US8026568B2 (en) 2005-11-15 2011-09-27 Velox Semiconductor Corporation Second Schottky contact metal layer to improve GaN Schottky diode performance
EP1852895A1 (fr) * 2006-05-05 2007-11-07 Kinik Company Substrat à diamant et procédé de sa fabrication
US8138583B2 (en) 2007-02-16 2012-03-20 Cree, Inc. Diode having reduced on-resistance and associated method of manufacture
US7939853B2 (en) 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
JP2011077351A (ja) * 2009-09-30 2011-04-14 Sumitomo Electric Ind Ltd 発光素子
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
FR3017242B1 (fr) * 2014-02-05 2017-09-01 St Microelectronics Tours Sas Diode schottky verticale au nitrure de gallium
JP6257459B2 (ja) * 2014-06-23 2018-01-10 株式会社東芝 半導体装置及びその製造方法
US10600635B2 (en) * 2017-04-20 2020-03-24 Elyakim Kassel Method and apparatus for a semiconductor-on-higher thermal conductive multi-layer composite wafer
US10332876B2 (en) * 2017-09-14 2019-06-25 Infineon Technologies Austria Ag Method of forming compound semiconductor body
WO2019170631A1 (fr) * 2018-03-06 2019-09-12 Abb Schweiz Ag Dispositif à semi-conducteur de forte puissance à plaque de champ et structure de terminaison mésa auto-alignées et son procédé de fabrication
US11469333B1 (en) 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472A1 (fr) * 1991-09-18 1993-03-19 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5635412A (en) * 1994-05-04 1997-06-03 North Carolina State University Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
WO1997027629A1 (fr) * 1996-01-24 1997-07-31 Cree Research, Inc. Diode schottky a structure mesa dotee d'un anneau de garde
DE19801999A1 (de) * 1997-06-18 1998-12-24 Mitsubishi Electric Corp Halbleitereinrichtung und Herstellungsverfahren einer Halbleitereinrichtung
WO2000049661A1 (fr) * 1999-02-17 2000-08-24 Koninklijke Philips Electronics N.V. Dispositif a semi-conducteur a effet de champ a grille isolee
US6121661A (en) * 1996-12-11 2000-09-19 International Business Machines Corporation Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
US20010034116A1 (en) * 2000-03-22 2001-10-25 Lg Electronics Inc. Semiconductor device with schottky contact and method for forming the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831331B2 (en) * 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472A1 (fr) * 1991-09-18 1993-03-19 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5635412A (en) * 1994-05-04 1997-06-03 North Carolina State University Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
WO1997027629A1 (fr) * 1996-01-24 1997-07-31 Cree Research, Inc. Diode schottky a structure mesa dotee d'un anneau de garde
US6121661A (en) * 1996-12-11 2000-09-19 International Business Machines Corporation Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
DE19801999A1 (de) * 1997-06-18 1998-12-24 Mitsubishi Electric Corp Halbleitereinrichtung und Herstellungsverfahren einer Halbleitereinrichtung
WO2000049661A1 (fr) * 1999-02-17 2000-08-24 Koninklijke Philips Electronics N.V. Dispositif a semi-conducteur a effet de champ a grille isolee
US20010034116A1 (en) * 2000-03-22 2001-10-25 Lg Electronics Inc. Semiconductor device with schottky contact and method for forming the same

Also Published As

Publication number Publication date
JP2005537679A (ja) 2005-12-08
FR2844099A1 (fr) 2004-03-05
WO2004027878A2 (fr) 2004-04-01
US20050258483A1 (en) 2005-11-24
FR2844099B1 (fr) 2005-09-02
TW200410312A (en) 2004-06-16
EP1535346A2 (fr) 2005-06-01

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