JPH11196528A5 - - Google Patents

Info

Publication number
JPH11196528A5
JPH11196528A5 JP1998286066A JP28606698A JPH11196528A5 JP H11196528 A5 JPH11196528 A5 JP H11196528A5 JP 1998286066 A JP1998286066 A JP 1998286066A JP 28606698 A JP28606698 A JP 28606698A JP H11196528 A5 JPH11196528 A5 JP H11196528A5
Authority
JP
Japan
Prior art keywords
transistor
current electrode
coupled
electrode
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998286066A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11196528A (ja
JP3992855B2 (ja
Filing date
Publication date
Priority claimed from US08/939,764 external-priority patent/US5917336A/en
Application filed filed Critical
Publication of JPH11196528A publication Critical patent/JPH11196528A/ja
Publication of JPH11196528A5 publication Critical patent/JPH11196528A5/ja
Application granted granted Critical
Publication of JP3992855B2 publication Critical patent/JP3992855B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP28606698A 1997-09-29 1998-09-22 静電気放電保護のための回路 Expired - Fee Related JP3992855B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/939,764 US5917336A (en) 1997-09-29 1997-09-29 Circuit for electrostatic discharge (ESD) protection
US08/939,764 1997-09-29

Publications (3)

Publication Number Publication Date
JPH11196528A JPH11196528A (ja) 1999-07-21
JPH11196528A5 true JPH11196528A5 (enExample) 2005-11-10
JP3992855B2 JP3992855B2 (ja) 2007-10-17

Family

ID=25473694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28606698A Expired - Fee Related JP3992855B2 (ja) 1997-09-29 1998-09-22 静電気放電保護のための回路

Country Status (4)

Country Link
US (1) US5917336A (enExample)
JP (1) JP3992855B2 (enExample)
KR (1) KR100359395B1 (enExample)
TW (1) TW387139B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1173258A (ja) * 1997-08-28 1999-03-16 Toshiba Corp 低消費電力バス構造及びその制御方法、低消費電力バス構造の合成システム及びその合成方法、携帯情報機器
US6104168A (en) * 1998-07-17 2000-08-15 Lucent Technologies Inc. Low leakage low dropout transistor charging circuit
US6445039B1 (en) * 1998-11-12 2002-09-03 Broadcom Corporation System and method for ESD Protection
US8405152B2 (en) 1999-01-15 2013-03-26 Broadcom Corporation System and method for ESD protection
US7687858B2 (en) * 1999-01-15 2010-03-30 Broadcom Corporation System and method for ESD protection
WO2000042659A2 (en) * 1999-01-15 2000-07-20 Broadcom Corporation System and method for esd protection
US6600356B1 (en) * 1999-04-30 2003-07-29 Analog Devices, Inc. ESD protection circuit with controlled breakdown voltage
US6646840B1 (en) 2000-08-03 2003-11-11 Fairchild Semiconductor Corporation Internally triggered electrostatic device clamp with stand-off voltage
US6671153B1 (en) 2000-09-11 2003-12-30 Taiwan Semiconductor Manufacturing Company Low-leakage diode string for use in the power-rail ESD clamp circuits
KR100390155B1 (ko) * 2000-12-30 2003-07-04 주식회사 하이닉스반도체 Ｅｓｄ 보호회로
US6757147B1 (en) * 2002-05-03 2004-06-29 Pericom Semiconductor Corp. Pin-to-pin ESD-protection structure having cross-pin activation
US20040057172A1 (en) * 2002-09-25 2004-03-25 Maoyou Sun Circuit for protection against electrostatic discharge
JP2004222119A (ja) * 2003-01-17 2004-08-05 Renesas Technology Corp 半導体集積回路
DE10342305A1 (de) * 2003-09-12 2005-04-14 Infineon Technologies Ag ESD-Schutzvorrichtung
US7061737B2 (en) * 2004-04-05 2006-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for ESD protection on high voltage I/O circuits triggered by a diode string
US7439592B2 (en) * 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications
US7505238B2 (en) * 2005-01-07 2009-03-17 Agnes Neves Woo ESD configuration for low parasitic capacitance I/O
KR100688531B1 (ko) * 2005-02-14 2007-03-02 삼성전자주식회사 정전기 전압에 대해서도 안정적인 고전압 내성을 갖는 입출력 회로
US20060274465A1 (en) * 2005-06-01 2006-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge (ESD) protection circuits using metal-insulator-metal (MIM) capacitors
US7982499B2 (en) * 2006-07-25 2011-07-19 Atmel Corporation Capacitive node isolation for electrostatic discharge circuit
CN100581021C (zh) * 2007-07-02 2010-01-13 奕力科技股份有限公司 静电保护电路装置
US20090122451A1 (en) * 2007-11-08 2009-05-14 Meng-Yong Lin Esd protection circuit device
US20110249369A1 (en) * 2010-04-13 2011-10-13 Rueger Timothy T Apparatus for protection of electronic circuitry and associated methods
US8514533B2 (en) * 2010-06-24 2013-08-20 Intel Corporation Method, apparatus, and system for protecting supply nodes from electrostatic discharge
US8520347B2 (en) 2011-07-29 2013-08-27 Silicon Laboratories Inc. Circuit for ESD protection including dynamically terminated diode strings comprised of bipolar devices
US8630072B2 (en) 2011-07-29 2014-01-14 Silicon Laboratories Inc. Circuits including a diode string comprised of bipolar stages having an adjustable pseudo beta for ESD protection
DE102019121271A1 (de) * 2018-08-30 2020-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. ESD-Schutzschaltung, Halbleitersystem, das diese aufweist, und Verfahren zum Betreiben derselben

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965840B2 (ja) * 1993-12-02 1999-10-18 株式会社東芝 トランジスタ回路
US5530612A (en) * 1994-03-28 1996-06-25 Intel Corporation Electrostatic discharge protection circuits using biased and terminated PNP transistor chains
US5565790A (en) * 1995-02-13 1996-10-15 Taiwan Semiconductor Manufacturing Company Ltd ESD protection circuit with field transistor clamp and resistor in the gate circuit of a clamp triggering FET

Similar Documents

Publication Publication Date Title
JPH11196528A5 (enExample)
TWI282161B (en) Electrostatic discharge protection circuitry and method of operation
JP3992855B2 (ja) 静電気放電保護のための回路
JP3504736B2 (ja) Ｅｓｄ保護回路
JP2905227B2 (ja) 電源バッテリの極性の反転に対して自己保護されている集積回路
DE3850807D1 (de) Schutzsystem für CMOS-integrierte Schaltungen.
TW430822B (en) Protection of electrical devices with voltage variable materials
JPH10340998A5 (enExample)
JP3590706B2 (ja) 半導体装置の保護素子
JP2000286387A5 (enExample)
JP3337493B2 (ja) 過電圧保護半導体スイッチ
KR920001732A (ko) 반도체 기억장치
JP2644342B2 (ja) 入力保護回路を備えた半導体装置
HK79493A (en) Integrated circuit of the complementary technique having a substrate bias generator
US20030048588A1 (en) Output buffer and I/O protection circuit for CMOS technology
US20040021998A1 (en) Electrostatic discharge protection device comprising several thyristors
US20040104437A1 (en) Arrangement and method for ESD protection
EP0094145A2 (en) High gain thyristor switching circuit
US6061218A (en) Overvoltage protection device and method for increasing shunt current
JP2010080472A (ja) 半導体装置
JPH0846132A (ja) 保護回路
KR970030780A (ko) 반도체 집적 회로 장치
CN118399556A (zh) 充电保护电路和车辆
EP0789398A3 (en) Semiconductor device having power MOS transistor including parasitic transistor
KR970030781A (ko) 반도체장치의 입력보호회로