JP3992855B2 - 静電気放電保護のための回路 - Google Patents

静電気放電保護のための回路 Download PDF

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Publication number
JP3992855B2
JP3992855B2 JP28606698A JP28606698A JP3992855B2 JP 3992855 B2 JP3992855 B2 JP 3992855B2 JP 28606698 A JP28606698 A JP 28606698A JP 28606698 A JP28606698 A JP 28606698A JP 3992855 B2 JP3992855 B2 JP 3992855B2
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Japan
Prior art keywords
transistor
electrode
circuit
coupled
current electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28606698A
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English (en)
Japanese (ja)
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JPH11196528A5 (enExample
JPH11196528A (ja
Inventor
ジェレミー・シー・スミス
ステファン・ジー・ジャミソン
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NXP USA Inc
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NXP USA Inc
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Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JPH11196528A publication Critical patent/JPH11196528A/ja
Publication of JPH11196528A5 publication Critical patent/JPH11196528A5/ja
Application granted granted Critical
Publication of JP3992855B2 publication Critical patent/JP3992855B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Elimination Of Static Electricity (AREA)
JP28606698A 1997-09-29 1998-09-22 静電気放電保護のための回路 Expired - Fee Related JP3992855B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/939,764 US5917336A (en) 1997-09-29 1997-09-29 Circuit for electrostatic discharge (ESD) protection
US08/939,764 1997-09-29

Publications (3)

Publication Number Publication Date
JPH11196528A JPH11196528A (ja) 1999-07-21
JPH11196528A5 JPH11196528A5 (enExample) 2005-11-10
JP3992855B2 true JP3992855B2 (ja) 2007-10-17

Family

ID=25473694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28606698A Expired - Fee Related JP3992855B2 (ja) 1997-09-29 1998-09-22 静電気放電保護のための回路

Country Status (4)

Country Link
US (1) US5917336A (enExample)
JP (1) JP3992855B2 (enExample)
KR (1) KR100359395B1 (enExample)
TW (1) TW387139B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1173258A (ja) * 1997-08-28 1999-03-16 Toshiba Corp 低消費電力バス構造及びその制御方法、低消費電力バス構造の合成システム及びその合成方法、携帯情報機器
US6104168A (en) * 1998-07-17 2000-08-15 Lucent Technologies Inc. Low leakage low dropout transistor charging circuit
US6445039B1 (en) * 1998-11-12 2002-09-03 Broadcom Corporation System and method for ESD Protection
US8405152B2 (en) 1999-01-15 2013-03-26 Broadcom Corporation System and method for ESD protection
US7687858B2 (en) * 1999-01-15 2010-03-30 Broadcom Corporation System and method for ESD protection
WO2000042659A2 (en) * 1999-01-15 2000-07-20 Broadcom Corporation System and method for esd protection
US6600356B1 (en) * 1999-04-30 2003-07-29 Analog Devices, Inc. ESD protection circuit with controlled breakdown voltage
US6646840B1 (en) 2000-08-03 2003-11-11 Fairchild Semiconductor Corporation Internally triggered electrostatic device clamp with stand-off voltage
US6671153B1 (en) 2000-09-11 2003-12-30 Taiwan Semiconductor Manufacturing Company Low-leakage diode string for use in the power-rail ESD clamp circuits
KR100390155B1 (ko) * 2000-12-30 2003-07-04 주식회사 하이닉스반도체 Ｅｓｄ 보호회로
US6757147B1 (en) * 2002-05-03 2004-06-29 Pericom Semiconductor Corp. Pin-to-pin ESD-protection structure having cross-pin activation
US20040057172A1 (en) * 2002-09-25 2004-03-25 Maoyou Sun Circuit for protection against electrostatic discharge
JP2004222119A (ja) * 2003-01-17 2004-08-05 Renesas Technology Corp 半導体集積回路
DE10342305A1 (de) * 2003-09-12 2005-04-14 Infineon Technologies Ag ESD-Schutzvorrichtung
US7061737B2 (en) * 2004-04-05 2006-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for ESD protection on high voltage I/O circuits triggered by a diode string
US7439592B2 (en) * 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications
US7505238B2 (en) * 2005-01-07 2009-03-17 Agnes Neves Woo ESD configuration for low parasitic capacitance I/O
KR100688531B1 (ko) * 2005-02-14 2007-03-02 삼성전자주식회사 정전기 전압에 대해서도 안정적인 고전압 내성을 갖는 입출력 회로
US20060274465A1 (en) * 2005-06-01 2006-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge (ESD) protection circuits using metal-insulator-metal (MIM) capacitors
US7982499B2 (en) * 2006-07-25 2011-07-19 Atmel Corporation Capacitive node isolation for electrostatic discharge circuit
CN100581021C (zh) * 2007-07-02 2010-01-13 奕力科技股份有限公司 静电保护电路装置
US20090122451A1 (en) * 2007-11-08 2009-05-14 Meng-Yong Lin Esd protection circuit device
US20110249369A1 (en) * 2010-04-13 2011-10-13 Rueger Timothy T Apparatus for protection of electronic circuitry and associated methods
US8514533B2 (en) * 2010-06-24 2013-08-20 Intel Corporation Method, apparatus, and system for protecting supply nodes from electrostatic discharge
US8520347B2 (en) 2011-07-29 2013-08-27 Silicon Laboratories Inc. Circuit for ESD protection including dynamically terminated diode strings comprised of bipolar devices
US8630072B2 (en) 2011-07-29 2014-01-14 Silicon Laboratories Inc. Circuits including a diode string comprised of bipolar stages having an adjustable pseudo beta for ESD protection
DE102019121271A1 (de) * 2018-08-30 2020-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. ESD-Schutzschaltung, Halbleitersystem, das diese aufweist, und Verfahren zum Betreiben derselben

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965840B2 (ja) * 1993-12-02 1999-10-18 株式会社東芝 トランジスタ回路
US5530612A (en) * 1994-03-28 1996-06-25 Intel Corporation Electrostatic discharge protection circuits using biased and terminated PNP transistor chains
US5565790A (en) * 1995-02-13 1996-10-15 Taiwan Semiconductor Manufacturing Company Ltd ESD protection circuit with field transistor clamp and resistor in the gate circuit of a clamp triggering FET

Also Published As

Publication number Publication date
KR100359395B1 (ko) 2003-01-24
TW387139B (en) 2000-04-11
US5917336A (en) 1999-06-29
JPH11196528A (ja) 1999-07-21
KR19990030186A (ko) 1999-04-26

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