JPH1117219A5 - - Google Patents

Info

Publication number
JPH1117219A5
JPH1117219A5 JP1998167732A JP16773298A JPH1117219A5 JP H1117219 A5 JPH1117219 A5 JP H1117219A5 JP 1998167732 A JP1998167732 A JP 1998167732A JP 16773298 A JP16773298 A JP 16773298A JP H1117219 A5 JPH1117219 A5 JP H1117219A5
Authority
JP
Japan
Prior art keywords
type
hole injection
layer
injection layer
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998167732A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1117219A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JPH1117219A publication Critical patent/JPH1117219A/ja
Publication of JPH1117219A5 publication Critical patent/JPH1117219A5/ja
Pending legal-status Critical Current

Links

JP16773298A 1997-06-06 1998-06-01 Ｄｈ構造半導体発光素子 Pending JPH1117219A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87057097A 1997-06-06 1997-06-06
US870,570 1997-06-06

Publications (2)

Publication Number Publication Date
JPH1117219A JPH1117219A (ja) 1999-01-22
JPH1117219A5 true JPH1117219A5 (enExample) 2006-11-02

Family

ID=25355686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16773298A Pending JPH1117219A (ja) 1997-06-06 1998-06-01 Ｄｈ構造半導体発光素子

Country Status (3)

Country Link
EP (1) EP0886326A3 (enExample)
JP (1) JPH1117219A (enExample)
KR (1) KR19990006633A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3698402B2 (ja) 1998-11-30 2005-09-21 シャープ株式会社 発光ダイオード
AU4557300A (en) 1999-04-27 2000-11-10 Karandashov, Sergey Radiation source
JP2001274456A (ja) 2000-01-18 2001-10-05 Sharp Corp 発光ダイオード
US6835957B2 (en) * 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
DE102007003282B4 (de) * 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
KR100855340B1 (ko) * 2007-05-11 2008-09-04 (주)더리즈 발광 다이오드 소자의 제조 방법
KR101976455B1 (ko) * 2012-10-19 2019-05-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP6595801B2 (ja) 2014-05-30 2019-10-23 エルジー イノテック カンパニー リミテッド 発光素子
WO2017023535A1 (en) 2015-07-31 2017-02-09 Sxaymiq Technologies Llc Light emitting diode with displaced p-type doping
DE102017123542A1 (de) * 2017-10-10 2019-04-11 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
GB202315794D0 (en) * 2023-10-16 2023-11-29 Univ Surrey A Semiconductor Optical Device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208888A (ja) * 1983-05-13 1984-11-27 Nec Corp 化合物半導体発光素子
JPS63155683A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd 半導体発光装置
EP0540799A1 (en) * 1991-11-04 1993-05-12 International Business Machines Corporation Improved AlGaInP diodes emitting visible light
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers

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