JPH08250810A5 - - Google Patents

Info

Publication number
JPH08250810A5
JPH08250810A5 JP1996052135A JP5213596A JPH08250810A5 JP H08250810 A5 JPH08250810 A5 JP H08250810A5 JP 1996052135 A JP1996052135 A JP 1996052135A JP 5213596 A JP5213596 A JP 5213596A JP H08250810 A5 JPH08250810 A5 JP H08250810A5
Authority
JP
Japan
Prior art keywords
semiconductor
region
superlattice
semiconductor device
energy level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996052135A
Other languages
English (en)
Japanese (ja)
Other versions
JP3909884B2 (ja
JPH08250810A (ja
Filing date
Publication date
Priority claimed from GB9504666A external-priority patent/GB2298735A/en
Application filed filed Critical
Publication of JPH08250810A publication Critical patent/JPH08250810A/ja
Publication of JPH08250810A5 publication Critical patent/JPH08250810A5/ja
Application granted granted Critical
Publication of JP3909884B2 publication Critical patent/JP3909884B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP05213596A 1995-03-08 1996-03-08 半導体レーザ素子 Expired - Fee Related JP3909884B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9504666.0 1995-03-08
GB9504666A GB2298735A (en) 1995-03-08 1995-03-08 Semiconductor device having a miniband

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004190448A Division JP4067104B2 (ja) 1995-03-08 2004-06-28 ミニバンドを有する半導体素子
JP2006348527A Division JP4153966B2 (ja) 1995-03-08 2006-12-25 半導体発光素子

Publications (3)

Publication Number Publication Date
JPH08250810A JPH08250810A (ja) 1996-09-27
JPH08250810A5 true JPH08250810A5 (enExample) 2004-11-04
JP3909884B2 JP3909884B2 (ja) 2007-04-25

Family

ID=10770858

Family Applications (4)

Application Number Title Priority Date Filing Date
JP05213596A Expired - Fee Related JP3909884B2 (ja) 1995-03-08 1996-03-08 半導体レーザ素子
JP2004190448A Expired - Fee Related JP4067104B2 (ja) 1995-03-08 2004-06-28 ミニバンドを有する半導体素子
JP2006348527A Expired - Fee Related JP4153966B2 (ja) 1995-03-08 2006-12-25 半導体発光素子
JP2007232324A Expired - Fee Related JP4685845B2 (ja) 1995-03-08 2007-09-07 半導体発光素子

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2004190448A Expired - Fee Related JP4067104B2 (ja) 1995-03-08 2004-06-28 ミニバンドを有する半導体素子
JP2006348527A Expired - Fee Related JP4153966B2 (ja) 1995-03-08 2006-12-25 半導体発光素子
JP2007232324A Expired - Fee Related JP4685845B2 (ja) 1995-03-08 2007-09-07 半導体発光素子

Country Status (5)

Country Link
US (1) US5747827A (enExample)
EP (2) EP1213771A3 (enExample)
JP (4) JP3909884B2 (enExample)
DE (1) DE69636110T2 (enExample)
GB (1) GB2298735A (enExample)

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JP3478090B2 (ja) * 1997-05-26 2003-12-10 日亜化学工業株式会社 窒化物半導体素子
WO1998031055A1 (en) * 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6677619B1 (en) 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JPH1146038A (ja) * 1997-05-29 1999-02-16 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
US7365369B2 (en) * 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
US6459096B1 (en) * 1998-01-14 2002-10-01 Manijeh Razeghi Multi quantum well grinsch detector
KR100589622B1 (ko) 1998-03-12 2006-09-27 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
DE19824222A1 (de) * 1998-05-29 1999-12-02 Lite On Electronics Inc Leuchtdiode mit lichtdurchlässiger Fensterschicht
JP4629178B2 (ja) * 1998-10-06 2011-02-09 日亜化学工業株式会社 窒化物半導体素子
GB9913950D0 (en) 1999-06-15 1999-08-18 Arima Optoelectronics Corp Unipolar light emitting devices based on iii-nitride semiconductor superlattices
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP4854829B2 (ja) * 1999-11-22 2012-01-18 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4547765B2 (ja) * 2000-03-30 2010-09-22 三菱電機株式会社 光変調器及び光変調器付半導体レーザ装置、並びに光通信装置
US6891187B2 (en) * 2001-08-17 2005-05-10 Lucent Technologies Inc. Optical devices with heavily doped multiple quantum wells
US6711195B2 (en) * 2002-02-28 2004-03-23 Agilent Technologies, Inc. Long-wavelength photonic device with GaAsSb quantum-well layer
US7042921B2 (en) 2003-07-11 2006-05-09 Emcore Corporation Complex coupled single mode laser with dual active region
NO20041523L (no) * 2003-09-19 2005-03-21 Sumitomo Electric Industries Lysemitterende halvlederelement
GB2410847A (en) 2004-02-05 2005-08-10 Dyson Ltd Control of motor winding energisation according to rotor angle
GB2410848A (en) 2004-02-05 2005-08-10 Dyson Ltd Voltage compensation in switched reluctance motor
US7098471B2 (en) * 2004-06-14 2006-08-29 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Semiconductor quantum well devices and methods of making the same
KR100670531B1 (ko) 2004-08-26 2007-01-16 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100718129B1 (ko) * 2005-06-03 2007-05-14 삼성전자주식회사 Ⅲ-Ⅴ족 ＧａＮ계 화합물 반도체 소자
JP4920221B2 (ja) * 2005-09-05 2012-04-18 学校法人上智学院 ＩｎＰ基板を有する光半導体装置
DE102007044439B4 (de) * 2007-09-18 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit Quantentopfstruktur
KR100887050B1 (ko) 2007-12-06 2009-03-04 삼성전기주식회사 질화물 반도체 소자
TWI427824B (zh) * 2008-03-14 2014-02-21 旭化成電子材料元件股份有限公司 紅外線發光元件
KR101018088B1 (ko) * 2008-11-07 2011-02-25 삼성엘이디 주식회사 질화물 반도체 소자
JP4681684B1 (ja) * 2009-08-24 2011-05-11 Ｄｏｗａエレクトロニクス株式会社 窒化物半導体素子およびその製造方法
TWI557936B (zh) 2010-04-30 2016-11-11 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
US8723189B1 (en) * 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
CN103413877B (zh) * 2013-08-16 2016-01-20 湘能华磊光电股份有限公司 外延结构量子阱应力释放层的生长方法及其外延结构
JP2015207584A (ja) * 2014-04-17 2015-11-19 浜松ホトニクス株式会社 半導体レーザ
JP2017069299A (ja) 2015-09-29 2017-04-06 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
EP3954722A1 (en) * 2020-07-30 2022-02-16 Evonik Operations GmbH Process and composition for the production of flexible polyurethane foam

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JPS6028268A (ja) * 1983-07-26 1985-02-13 Agency Of Ind Science & Technol 半導体装置
US4866488A (en) * 1985-03-29 1989-09-12 Texas Instruments Incorporated Ballistic transport filter and device
US4731789A (en) * 1985-05-13 1988-03-15 Xerox Corporation Clad superlattice semiconductor laser
JPH0634425B2 (ja) * 1986-07-25 1994-05-02 三菱電機株式会社 半導体レ−ザ
US4882734A (en) * 1988-03-09 1989-11-21 Xerox Corporation Quantum well heterostructure lasers with low current density threshold and higher TO values
JPH01241192A (ja) * 1988-03-23 1989-09-26 Fujitsu Ltd 半導体装置
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
JP2653471B2 (ja) * 1988-05-24 1997-09-17 日本電信電話株式会社 半導体装置
JPH01298786A (ja) * 1988-05-26 1989-12-01 Sharp Corp 半導体レーザ装置及びその製造方法
JPH08111541A (ja) * 1989-12-08 1996-04-30 Hitachi Ltd 半導体装置
JPH03257887A (ja) * 1990-03-07 1991-11-18 Fuji Xerox Co Ltd 半導体レーザ装置
US5040186A (en) * 1990-03-13 1991-08-13 At&T Bell Laboratories InP-based quantum-well laser
EP0555402A1 (en) * 1990-10-31 1993-08-18 Martin Marietta Corporation Miniband transport quantum well infrared detector
JP3398966B2 (ja) * 1991-02-21 2003-04-21 ソニー株式会社 半導体発光素子
SG77568A1 (en) * 1992-02-19 2001-01-16 Sony Corp Semiconductor laser
JP3245937B2 (ja) * 1992-03-25 2002-01-15 ソニー株式会社 半導体発光素子
IL106130A (en) * 1992-06-30 1996-10-19 Martin Marietta Corp Semiconductor miniband transport quantum well detector and a method for detecting electromagnetic radiation
JP3198678B2 (ja) * 1992-10-29 2001-08-13 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
JP2536714B2 (ja) * 1993-03-03 1996-09-18 日本電気株式会社 光変調器集積型多重量子井戸構造半導体レ―ザ素子
JP3243111B2 (ja) * 1993-03-15 2002-01-07 株式会社東芝 化合物半導体素子
JPH0715085A (ja) * 1993-06-25 1995-01-17 Furukawa Electric Co Ltd:The 半導体レーザ素子
MY111898A (en) * 1993-07-02 2001-02-28 Sony Corp Semiconductor laser
JP3116675B2 (ja) * 1993-07-28 2000-12-11 ソニー株式会社 半導体レーザー

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