JPH1117219A - Ｄｈ構造半導体発光素子 - Google Patents

Ｄｈ構造半導体発光素子

Info

Publication number
JPH1117219A
JPH1117219A JP16773298A JP16773298A JPH1117219A JP H1117219 A JPH1117219 A JP H1117219A JP 16773298 A JP16773298 A JP 16773298A JP 16773298 A JP16773298 A JP 16773298A JP H1117219 A JPH1117219 A JP H1117219A
Authority
JP
Japan
Prior art keywords
type
layer
light emitting
emitting device
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16773298A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1117219A5 (enExample
Inventor
Stephen A Stockman
スティーブン・エー・ストックマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JPH1117219A publication Critical patent/JPH1117219A/ja
Publication of JPH1117219A5 publication Critical patent/JPH1117219A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
JP16773298A 1997-06-06 1998-06-01 Ｄｈ構造半導体発光素子 Pending JPH1117219A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87057097A 1997-06-06 1997-06-06
US870,570 1997-06-06

Publications (2)

Publication Number Publication Date
JPH1117219A true JPH1117219A (ja) 1999-01-22
JPH1117219A5 JPH1117219A5 (enExample) 2006-11-02

Family

ID=25355686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16773298A Pending JPH1117219A (ja) 1997-06-06 1998-06-01 Ｄｈ構造半導体発光素子

Country Status (3)

Country Link
EP (1) EP0886326A3 (enExample)
JP (1) JPH1117219A (enExample)
KR (1) KR19990006633A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100855340B1 (ko) * 2007-05-11 2008-09-04 (주)더리즈 발광 다이오드 소자의 제조 방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3698402B2 (ja) 1998-11-30 2005-09-21 シャープ株式会社 発光ダイオード
AU4557300A (en) 1999-04-27 2000-11-10 Karandashov, Sergey Radiation source
JP2001274456A (ja) 2000-01-18 2001-10-05 Sharp Corp 発光ダイオード
US6835957B2 (en) * 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
DE102007003282B4 (de) * 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
KR101976455B1 (ko) * 2012-10-19 2019-05-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP6595801B2 (ja) 2014-05-30 2019-10-23 エルジー イノテック カンパニー リミテッド 発光素子
WO2017023535A1 (en) 2015-07-31 2017-02-09 Sxaymiq Technologies Llc Light emitting diode with displaced p-type doping
DE102017123542A1 (de) * 2017-10-10 2019-04-11 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
GB202315794D0 (en) * 2023-10-16 2023-11-29 Univ Surrey A Semiconductor Optical Device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208888A (ja) * 1983-05-13 1984-11-27 Nec Corp 化合物半導体発光素子
JPS63155683A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd 半導体発光装置
EP0540799A1 (en) * 1991-11-04 1993-05-12 International Business Machines Corporation Improved AlGaInP diodes emitting visible light
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100855340B1 (ko) * 2007-05-11 2008-09-04 (주)더리즈 발광 다이오드 소자의 제조 방법

Also Published As

Publication number Publication date
EP0886326A3 (en) 1999-11-24
KR19990006633A (ko) 1999-01-25
EP0886326A2 (en) 1998-12-23

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