JPH11166866A5 - - Google Patents

Info

Publication number
JPH11166866A5
JPH11166866A5 JP1998225252A JP22525298A JPH11166866A5 JP H11166866 A5 JPH11166866 A5 JP H11166866A5 JP 1998225252 A JP1998225252 A JP 1998225252A JP 22525298 A JP22525298 A JP 22525298A JP H11166866 A5 JPH11166866 A5 JP H11166866A5
Authority
JP
Japan
Prior art keywords
semiconductor substrate
layer
forming
membrane
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998225252A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11166866A (ja
JP4271751B2 (ja
Filing date
Publication date
Priority claimed from EP97401796A external-priority patent/EP0893827B1/en
Application filed filed Critical
Publication of JPH11166866A publication Critical patent/JPH11166866A/ja
Publication of JPH11166866A5 publication Critical patent/JPH11166866A5/ja
Application granted granted Critical
Publication of JP4271751B2 publication Critical patent/JP4271751B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP22525298A 1997-07-25 1998-07-24 電子装置および電子装置のためのメンブレンを形成する方法 Expired - Fee Related JP4271751B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP97401796A EP0893827B1 (en) 1997-07-25 1997-07-25 Electronic device and method for forming a membrane for an electronic device
EP97401796.4 1997-07-25
US09/120,755 US6022754A (en) 1997-07-25 1998-07-22 Electronic device and method for forming a membrane for an electronic device

Publications (3)

Publication Number Publication Date
JPH11166866A JPH11166866A (ja) 1999-06-22
JPH11166866A5 true JPH11166866A5 (enExample) 2005-10-27
JP4271751B2 JP4271751B2 (ja) 2009-06-03

Family

ID=26147864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22525298A Expired - Fee Related JP4271751B2 (ja) 1997-07-25 1998-07-24 電子装置および電子装置のためのメンブレンを形成する方法

Country Status (4)

Country Link
US (1) US6022754A (enExample)
EP (1) EP0893827B1 (enExample)
JP (1) JP4271751B2 (enExample)
CN (1) CN1213081A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19817311B4 (de) * 1998-04-18 2007-03-22 Robert Bosch Gmbh Herstellungsverfahren für mikromechanisches Bauelement
US6387724B1 (en) * 1999-02-26 2002-05-14 Dynamics Research Corporation Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface
JP4513161B2 (ja) * 2000-03-31 2010-07-28 東亞合成株式会社 ガスセンサの製造方法及びガスセンサ
US6468897B1 (en) * 2001-05-23 2002-10-22 Macronix International Co., Ltd. Method of forming damascene structure
EP2092833B1 (en) 2006-12-14 2012-10-17 ITO EN, Ltd. Process for producing tea drink
CN102354659B (zh) * 2011-11-02 2016-05-11 上海华虹宏力半导体制造有限公司 掩膜成核消除方法以及选择性外延生长方法
US9354197B2 (en) * 2013-04-25 2016-05-31 Wisenstech Ltd. Micromachined oxygen sensor and method of making the same
KR101616959B1 (ko) * 2013-07-02 2016-04-29 전자부품연구원 Fet 이온센서 및 이를 이용한 시스템
KR102142885B1 (ko) * 2013-10-14 2020-08-10 한국전자통신연구원 어레이형 광검출기를 제조하는 방법
CN103606565B (zh) * 2013-11-27 2016-05-11 苏州科技学院 压力传感器敏感元件的制造工艺
EP3465189B1 (en) * 2016-05-27 2024-05-08 Carrier Corporation Gas detection device and method of manufacturing the same
FR3079616B1 (fr) * 2018-03-30 2021-02-12 Soitec Silicon On Insulator Micro-capteur pour detecter des especes chimiques et procede de fabrication associe
CN110797255B (zh) * 2019-10-14 2022-10-28 长江存储科技有限责任公司 薄膜堆叠结构、三维存储器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706493A (en) * 1985-12-13 1987-11-17 General Motors Corporation Semiconductor gas sensor having thermally isolated site
FR2615287B1 (fr) * 1987-05-12 1989-10-06 Suisse Electronique Microtech Micro-capteur a technologie integree pour la detection de la presence de certains gaz
JP2582343B2 (ja) * 1993-12-04 1997-02-19 エルジー電子株式会社 低消費電力型薄膜ガスセンサ及びその製造方法
US5635628A (en) * 1995-05-19 1997-06-03 Siemens Aktiengesellschaft Method for detecting methane in a gas mixture

Similar Documents

Publication Publication Date Title
JPH11166866A5 (enExample)
JPH10154801A5 (enExample)
JP2005235858A5 (enExample)
JPS55163860A (en) Manufacture of semiconductor device
EP1267402A3 (en) Semiconductor device and method of production of same
JP2000353803A5 (enExample)
JP4271751B2 (ja) 電子装置および電子装置のためのメンブレンを形成する方法
JP2004536453A5 (enExample)
JPS62112323A (ja) 半導体面に接触を形成する方法
JPH11261031A5 (enExample)
EP0717438A3 (en) Method for forming side contact of semiconductor device
JPH11121457A (ja) 半導体装置の製造方法
KR100504177B1 (ko) 반도체 가스 센서 및 그 제조 방법
WO2007020538A3 (en) Integrated device having a semiconductor device and a temperature sensing element and corresponding manufacturing method
TW468271B (en) Thin film resistor used in a semiconductor chip and its manufacturing method
KR950003221B1 (ko) 반도체장치 제조방법
JPH01208831A (ja) 半導体装置の製造方法
KR0147195B1 (ko) 반도체 소자의 금속배선층 형성방법
JPH05175428A (ja) 集積回路装置
KR100578259B1 (ko) 전자장치및전자장치용막형성방법
JPH1051005A5 (enExample)
KR100200307B1 (ko) 반도체 소자의 콘택 형성방법
KR920013663A (ko) 반도체 장치의 전극 제조방법
JPH0442924A (ja) 半導体装置の製造方法
KR20000044930A (ko) 반도체 소자의 캐패시터 제조 방법