CN1213081A - 电子器件及为电子器件形成膜的方法 - Google Patents
电子器件及为电子器件形成膜的方法 Download PDFInfo
- Publication number
- CN1213081A CN1213081A CN98116373A CN98116373A CN1213081A CN 1213081 A CN1213081 A CN 1213081A CN 98116373 A CN98116373 A CN 98116373A CN 98116373 A CN98116373 A CN 98116373A CN 1213081 A CN1213081 A CN 1213081A
- Authority
- CN
- China
- Prior art keywords
- semiconductor substrate
- film
- substrate
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 20
- 239000012528 membrane Substances 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 238000002360 preparation method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 18
- 238000005260 corrosion Methods 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 15
- 239000000126 substance Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 206010070834 Sensitisation Diseases 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
Landscapes
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Electrochemistry (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP97401796A EP0893827B1 (en) | 1997-07-25 | 1997-07-25 | Electronic device and method for forming a membrane for an electronic device |
| EP97401796.4 | 1997-07-25 | ||
| US09/120,755 US6022754A (en) | 1997-07-25 | 1998-07-22 | Electronic device and method for forming a membrane for an electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1213081A true CN1213081A (zh) | 1999-04-07 |
Family
ID=26147864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98116373A Pending CN1213081A (zh) | 1997-07-25 | 1998-07-24 | 电子器件及为电子器件形成膜的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6022754A (enExample) |
| EP (1) | EP0893827B1 (enExample) |
| JP (1) | JP4271751B2 (enExample) |
| CN (1) | CN1213081A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354659A (zh) * | 2011-11-02 | 2012-02-15 | 上海宏力半导体制造有限公司 | 掩膜成核消除方法以及选择性外延生长方法 |
| CN110797255A (zh) * | 2019-10-14 | 2020-02-14 | 长江存储科技有限责任公司 | 薄膜堆叠结构、三维存储器及其制备方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19817311B4 (de) * | 1998-04-18 | 2007-03-22 | Robert Bosch Gmbh | Herstellungsverfahren für mikromechanisches Bauelement |
| US6387724B1 (en) * | 1999-02-26 | 2002-05-14 | Dynamics Research Corporation | Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface |
| JP4513161B2 (ja) * | 2000-03-31 | 2010-07-28 | 東亞合成株式会社 | ガスセンサの製造方法及びガスセンサ |
| US6468897B1 (en) * | 2001-05-23 | 2002-10-22 | Macronix International Co., Ltd. | Method of forming damascene structure |
| EP2092833B1 (en) | 2006-12-14 | 2012-10-17 | ITO EN, Ltd. | Process for producing tea drink |
| US9354197B2 (en) * | 2013-04-25 | 2016-05-31 | Wisenstech Ltd. | Micromachined oxygen sensor and method of making the same |
| KR101616959B1 (ko) * | 2013-07-02 | 2016-04-29 | 전자부품연구원 | Fet 이온센서 및 이를 이용한 시스템 |
| KR102142885B1 (ko) * | 2013-10-14 | 2020-08-10 | 한국전자통신연구원 | 어레이형 광검출기를 제조하는 방법 |
| CN103606565B (zh) * | 2013-11-27 | 2016-05-11 | 苏州科技学院 | 压力传感器敏感元件的制造工艺 |
| ES2983914T3 (es) * | 2016-05-27 | 2024-10-28 | Carrier Corp | Dispositivo de detección de gas y método de fabricación del mismo |
| FR3079616B1 (fr) * | 2018-03-30 | 2021-02-12 | Soitec Silicon On Insulator | Micro-capteur pour detecter des especes chimiques et procede de fabrication associe |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4706493A (en) * | 1985-12-13 | 1987-11-17 | General Motors Corporation | Semiconductor gas sensor having thermally isolated site |
| FR2615287B1 (fr) * | 1987-05-12 | 1989-10-06 | Suisse Electronique Microtech | Micro-capteur a technologie integree pour la detection de la presence de certains gaz |
| JP2582343B2 (ja) * | 1993-12-04 | 1997-02-19 | エルジー電子株式会社 | 低消費電力型薄膜ガスセンサ及びその製造方法 |
| US5635628A (en) * | 1995-05-19 | 1997-06-03 | Siemens Aktiengesellschaft | Method for detecting methane in a gas mixture |
-
1997
- 1997-07-25 EP EP97401796A patent/EP0893827B1/en not_active Expired - Lifetime
-
1998
- 1998-07-22 US US09/120,755 patent/US6022754A/en not_active Expired - Lifetime
- 1998-07-24 CN CN98116373A patent/CN1213081A/zh active Pending
- 1998-07-24 JP JP22525298A patent/JP4271751B2/ja not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354659A (zh) * | 2011-11-02 | 2012-02-15 | 上海宏力半导体制造有限公司 | 掩膜成核消除方法以及选择性外延生长方法 |
| CN102354659B (zh) * | 2011-11-02 | 2016-05-11 | 上海华虹宏力半导体制造有限公司 | 掩膜成核消除方法以及选择性外延生长方法 |
| CN110797255A (zh) * | 2019-10-14 | 2020-02-14 | 长江存储科技有限责任公司 | 薄膜堆叠结构、三维存储器及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4271751B2 (ja) | 2009-06-03 |
| US6022754A (en) | 2000-02-08 |
| JPH11166866A (ja) | 1999-06-22 |
| EP0893827A1 (en) | 1999-01-27 |
| EP0893827B1 (en) | 2004-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned | ||
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |