CN102354659A - 掩膜成核消除方法以及选择性外延生长方法 - Google Patents
掩膜成核消除方法以及选择性外延生长方法 Download PDFInfo
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- CN102354659A CN102354659A CN2011103419757A CN201110341975A CN102354659A CN 102354659 A CN102354659 A CN 102354659A CN 2011103419757 A CN2011103419757 A CN 2011103419757A CN 201110341975 A CN201110341975 A CN 201110341975A CN 102354659 A CN102354659 A CN 102354659A
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- epitaxial growth
- selective epitaxial
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- Crystals, And After-Treatments Of Crystals (AREA)
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Description
化学键 | 键能(kJ/mol) |
Si-Si | 222 |
Si-N | 355 |
Si-O | 452 |
Claims (8)
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CN201110341975.7A CN102354659B (zh) | 2011-11-02 | 2011-11-02 | 掩膜成核消除方法以及选择性外延生长方法 |
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CN201110341975.7A CN102354659B (zh) | 2011-11-02 | 2011-11-02 | 掩膜成核消除方法以及选择性外延生长方法 |
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CN102354659A true CN102354659A (zh) | 2012-02-15 |
CN102354659B CN102354659B (zh) | 2016-05-11 |
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Citations (12)
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EP0388733A1 (en) * | 1989-03-09 | 1990-09-26 | Fujitsu Limited | Method of fabricating semiconductor devices |
CN1213081A (zh) * | 1997-07-25 | 1999-04-07 | 摩托罗拉半导体公司 | 电子器件及为电子器件形成膜的方法 |
US6001541A (en) * | 1998-03-27 | 1999-12-14 | Micron Technology, Inc. | Method of forming contact openings and contacts |
CN1258094A (zh) * | 1998-11-26 | 2000-06-28 | 索尼株式会社 | 氮化物半导体的生长方法、半导体器件及其制造方法 |
CN1490844A (zh) * | 2002-10-16 | 2004-04-21 | 中国科学院半导体研究所 | 氮化镓及其化合物半导体的横向外延生长方法 |
US20040266151A1 (en) * | 2003-06-30 | 2004-12-30 | Kwan-Yong Lim | Method for fabricating gate-electrode of semiconductor device with use of hard mask |
US6846359B2 (en) * | 2002-10-25 | 2005-01-25 | The Board Of Trustees Of The University Of Illinois | Epitaxial CoSi2 on MOS devices |
WO2005088687A1 (ja) * | 2004-03-11 | 2005-09-22 | Nec Corporation | 窒化ガリウム系半導体基板の作製方法 |
CN1934671A (zh) * | 2004-03-29 | 2007-03-21 | 住友电气工业株式会社 | 碳系材料突起的形成方法及碳系材料突起 |
CN101303860A (zh) * | 2007-02-05 | 2008-11-12 | Sae磁学(香港)有限公司 | 被保护的磁读写头或磁记录介质及其形成方法 |
CN101661900A (zh) * | 2008-08-26 | 2010-03-03 | 株式会社瑞萨科技 | 半导体器件及其制造方法 |
WO2010061617A1 (ja) * | 2008-11-28 | 2010-06-03 | 国立大学法人山口大学 | 半導体発光素子及びその製造方法 |
-
2011
- 2011-11-02 CN CN201110341975.7A patent/CN102354659B/zh active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0388733A1 (en) * | 1989-03-09 | 1990-09-26 | Fujitsu Limited | Method of fabricating semiconductor devices |
CN1213081A (zh) * | 1997-07-25 | 1999-04-07 | 摩托罗拉半导体公司 | 电子器件及为电子器件形成膜的方法 |
US6001541A (en) * | 1998-03-27 | 1999-12-14 | Micron Technology, Inc. | Method of forming contact openings and contacts |
CN1258094A (zh) * | 1998-11-26 | 2000-06-28 | 索尼株式会社 | 氮化物半导体的生长方法、半导体器件及其制造方法 |
CN1490844A (zh) * | 2002-10-16 | 2004-04-21 | 中国科学院半导体研究所 | 氮化镓及其化合物半导体的横向外延生长方法 |
US6846359B2 (en) * | 2002-10-25 | 2005-01-25 | The Board Of Trustees Of The University Of Illinois | Epitaxial CoSi2 on MOS devices |
US20040266151A1 (en) * | 2003-06-30 | 2004-12-30 | Kwan-Yong Lim | Method for fabricating gate-electrode of semiconductor device with use of hard mask |
WO2005088687A1 (ja) * | 2004-03-11 | 2005-09-22 | Nec Corporation | 窒化ガリウム系半導体基板の作製方法 |
CN1934671A (zh) * | 2004-03-29 | 2007-03-21 | 住友电气工业株式会社 | 碳系材料突起的形成方法及碳系材料突起 |
CN101303860A (zh) * | 2007-02-05 | 2008-11-12 | Sae磁学(香港)有限公司 | 被保护的磁读写头或磁记录介质及其形成方法 |
CN101661900A (zh) * | 2008-08-26 | 2010-03-03 | 株式会社瑞萨科技 | 半导体器件及其制造方法 |
WO2010061617A1 (ja) * | 2008-11-28 | 2010-06-03 | 国立大学法人山口大学 | 半導体発光素子及びその製造方法 |
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CN102354659B (zh) | 2016-05-11 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140506 |
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Effective date of registration: 20140506 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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