JPH11100273A - 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 - Google Patents
窒化珪素質焼結体、その製造方法及びそれを用いた回路基板Info
- Publication number
- JPH11100273A JPH11100273A JP9261560A JP26156097A JPH11100273A JP H11100273 A JPH11100273 A JP H11100273A JP 9261560 A JP9261560 A JP 9261560A JP 26156097 A JP26156097 A JP 26156097A JP H11100273 A JPH11100273 A JP H11100273A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- sintered body
- sio
- phase
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 148
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 148
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002245 particle Substances 0.000 claims abstract description 45
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 29
- 150000002602 lanthanoids Chemical group 0.000 claims abstract description 22
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 17
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 17
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 47
- 239000000843 powder Substances 0.000 claims description 29
- 229910052727 yttrium Inorganic materials 0.000 claims description 19
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 17
- 238000010304 firing Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- 238000002441 X-ray diffraction Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000013001 point bending Methods 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 229910007277 Si3 N4 Inorganic materials 0.000 abstract 3
- 239000012071 phase Substances 0.000 description 57
- 238000005245 sintering Methods 0.000 description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 15
- 239000007791 liquid phase Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000007547 defect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000002994 raw material Substances 0.000 description 13
- 239000006104 solid solution Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000011158 quantitative evaluation Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 238000009694 cold isostatic pressing Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- LPLMZAJYUPAYQZ-UHFFFAOYSA-N diazanium;difluoride Chemical compound [NH4+].[NH4+].[F-].[F-] LPLMZAJYUPAYQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- -1 r and Hf Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000007582 slurry-cast process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9261560A JPH11100273A (ja) | 1997-09-26 | 1997-09-26 | 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9261560A JPH11100273A (ja) | 1997-09-26 | 1997-09-26 | 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11100273A true JPH11100273A (ja) | 1999-04-13 |
| JPH11100273A5 JPH11100273A5 (enExample) | 2004-11-11 |
Family
ID=17363606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9261560A Pending JPH11100273A (ja) | 1997-09-26 | 1997-09-26 | 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11100273A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009012994A (ja) * | 2007-07-02 | 2009-01-22 | National Institute Of Advanced Industrial & Technology | 高周波用低損失誘電体材料、その製造方法及び部材 |
| WO2016117553A1 (ja) * | 2015-01-23 | 2016-07-28 | 株式会社東芝 | 高熱伝導性窒化珪素焼結体、それを用いた窒化珪素基板および窒化珪素回路基板並びに半導体装置 |
| JPWO2020203683A1 (enExample) * | 2019-03-29 | 2020-10-08 | ||
| WO2024095834A1 (ja) * | 2022-11-02 | 2024-05-10 | 株式会社トクヤマ | 窒化ケイ素焼結体 |
-
1997
- 1997-09-26 JP JP9261560A patent/JPH11100273A/ja active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009012994A (ja) * | 2007-07-02 | 2009-01-22 | National Institute Of Advanced Industrial & Technology | 高周波用低損失誘電体材料、その製造方法及び部材 |
| WO2016117553A1 (ja) * | 2015-01-23 | 2016-07-28 | 株式会社東芝 | 高熱伝導性窒化珪素焼結体、それを用いた窒化珪素基板および窒化珪素回路基板並びに半導体装置 |
| JPWO2016117553A1 (ja) * | 2015-01-23 | 2017-11-02 | 株式会社東芝 | 高熱伝導性窒化珪素焼結体、それを用いた窒化珪素基板および窒化珪素回路基板並びに半導体装置 |
| EP3248956A4 (en) * | 2015-01-23 | 2018-08-22 | Kabushiki Kaisha Toshiba, Inc. | Silicon nitride sintered compact having high thermal conductivity, silicon nitride substrate and silicon nitride circuit substrate using same, and semiconductor device |
| US10308560B2 (en) | 2015-01-23 | 2019-06-04 | Kabushiki Kaisha Toshiba | High thermal conductive silicon nitride sintered body, and silicon nitride substrate and silicon nitride circuit board and semiconductor apparatus using the same |
| JPWO2020203683A1 (enExample) * | 2019-03-29 | 2020-10-08 | ||
| WO2020203683A1 (ja) * | 2019-03-29 | 2020-10-08 | デンカ株式会社 | 窒化ケイ素焼結体及びその製造方法、並びに積層体及びパワーモジュール |
| WO2024095834A1 (ja) * | 2022-11-02 | 2024-05-10 | 株式会社トクヤマ | 窒化ケイ素焼結体 |
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