JPH11100273A5 - - Google Patents

Info

Publication number
JPH11100273A5
JPH11100273A5 JP1997261560A JP26156097A JPH11100273A5 JP H11100273 A5 JPH11100273 A5 JP H11100273A5 JP 1997261560 A JP1997261560 A JP 1997261560A JP 26156097 A JP26156097 A JP 26156097A JP H11100273 A5 JPH11100273 A5 JP H11100273A5
Authority
JP
Japan
Prior art keywords
valves
reliability
heat dissipation
silicon nitride
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997261560A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11100273A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9261560A priority Critical patent/JPH11100273A/ja
Priority claimed from JP9261560A external-priority patent/JPH11100273A/ja
Publication of JPH11100273A publication Critical patent/JPH11100273A/ja
Publication of JPH11100273A5 publication Critical patent/JPH11100273A5/ja
Pending legal-status Critical Current

Links

JP9261560A 1997-09-26 1997-09-26 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 Pending JPH11100273A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9261560A JPH11100273A (ja) 1997-09-26 1997-09-26 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9261560A JPH11100273A (ja) 1997-09-26 1997-09-26 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板

Publications (2)

Publication Number Publication Date
JPH11100273A JPH11100273A (ja) 1999-04-13
JPH11100273A5 true JPH11100273A5 (enExample) 2004-11-11

Family

ID=17363606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9261560A Pending JPH11100273A (ja) 1997-09-26 1997-09-26 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板

Country Status (1)

Country Link
JP (1) JPH11100273A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4831581B2 (ja) * 2007-07-02 2011-12-07 独立行政法人産業技術総合研究所 高周波用低損失誘電体材料、その製造方法及び部材
US10308560B2 (en) 2015-01-23 2019-06-04 Kabushiki Kaisha Toshiba High thermal conductive silicon nitride sintered body, and silicon nitride substrate and silicon nitride circuit board and semiconductor apparatus using the same
CN113614910A (zh) * 2019-03-29 2021-11-05 电化株式会社 氮化硅烧结体及其制造方法、以及层叠体及电力模组
EP4613725A1 (en) * 2022-11-02 2025-09-10 Tokuyama Corporation Sintered silicon nitride object

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