JPH1051005A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法Info
- Publication number
- JPH1051005A JPH1051005A JP21931496A JP21931496A JPH1051005A JP H1051005 A JPH1051005 A JP H1051005A JP 21931496 A JP21931496 A JP 21931496A JP 21931496 A JP21931496 A JP 21931496A JP H1051005 A JPH1051005 A JP H1051005A
- Authority
- JP
- Japan
- Prior art keywords
- film
- active layer
- oxide film
- thermal oxide
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000003647 oxidation Effects 0.000 claims abstract description 21
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 21
- 238000000059 patterning Methods 0.000 claims abstract description 21
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 238000011109 contamination Methods 0.000 abstract description 20
- 239000011521 glass Substances 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 170
- 239000010410 layer Substances 0.000 description 56
- 239000011159 matrix material Substances 0.000 description 24
- 239000011229 interlayer Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000012535 impurity Substances 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000010407 anodic oxide Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- IUOOGQJPAJDLFV-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;ethane-1,2-diol Chemical compound OCCO.OC(=O)C(O)C(O)C(O)=O IUOOGQJPAJDLFV-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21931496A JPH1051005A (ja) | 1996-08-01 | 1996-08-01 | 半導体装置およびその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21931496A JPH1051005A (ja) | 1996-08-01 | 1996-08-01 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1051005A true JPH1051005A (ja) | 1998-02-20 |
| JPH1051005A5 JPH1051005A5 (enrdf_load_stackoverflow) | 2004-08-12 |
Family
ID=16733551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21931496A Withdrawn JPH1051005A (ja) | 1996-08-01 | 1996-08-01 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1051005A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5998838A (en) * | 1997-03-03 | 1999-12-07 | Nec Corporation | Thin film transistor |
| US6946330B2 (en) | 2001-10-11 | 2005-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Designing method and manufacturing method for semiconductor display device |
| US7371623B2 (en) | 1998-07-16 | 2008-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it |
-
1996
- 1996-08-01 JP JP21931496A patent/JPH1051005A/ja not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5998838A (en) * | 1997-03-03 | 1999-12-07 | Nec Corporation | Thin film transistor |
| US6258638B1 (en) | 1997-03-03 | 2001-07-10 | Nec Corporation | Method of manufacturing thin film transistor |
| US6444508B1 (en) | 1997-03-03 | 2002-09-03 | Nec Corporation | Method of manufacturing thin film transistor |
| US6703267B2 (en) | 1997-03-03 | 2004-03-09 | Nec Corporation | Method of manufacturing thin film transistor |
| US7371623B2 (en) | 1998-07-16 | 2008-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it |
| US6946330B2 (en) | 2001-10-11 | 2005-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Designing method and manufacturing method for semiconductor display device |
| US7498206B2 (en) | 2001-10-11 | 2009-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Order receiving process for manufacturing a semiconductor display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4027465B2 (ja) | アクティブマトリクス型表示装置およびその製造方法 | |
| JP3634061B2 (ja) | 液晶表示装置 | |
| US6396147B1 (en) | Semiconductor device with metal-oxide conductors | |
| JP4084080B2 (ja) | 薄膜トランジスタ基板の製造方法 | |
| US20040232423A1 (en) | Semiconductor integrated circuit and fabrication method thereof | |
| US7754541B2 (en) | Display device and method of producing the same | |
| JP2001007342A (ja) | 半導体装置およびその作製方法 | |
| JP2000058841A (ja) | 半導体装置及びその作製方法 | |
| JP2003241687A (ja) | 薄膜トランジスタ装置及びその製造方法 | |
| JPH11112002A (ja) | 半導体装置およびその製造方法 | |
| JP2002057339A (ja) | 薄膜半導体装置 | |
| JP4234363B2 (ja) | 薄膜トランジスタ装置及びその製造方法、並びにそれを備えた薄膜トランジスタ基板及び表示装置 | |
| JP3005918B2 (ja) | アクティブマトリクスパネル | |
| KR100737910B1 (ko) | 폴리실리콘형 박막트랜지스터 제조방법 | |
| JPH1079514A (ja) | アクティブマトリクス基板の製造方法 | |
| JP3105408B2 (ja) | 液晶表示素子 | |
| JP5221082B2 (ja) | Ｔｆｔ基板 | |
| JPH1051005A (ja) | 半導体装置およびその作製方法 | |
| JP4514862B2 (ja) | 半導体装置の作製方法 | |
| JPH1187721A (ja) | 薄膜トランジスタおよびこれを備えた液晶表示装置並びにｔｆｔアレイ基板の製造方法 | |
| JP2009210681A (ja) | 表示装置及びその製造方法 | |
| JP4190612B2 (ja) | 半導体装置の作製方法 | |
| JP2002164543A (ja) | 半導体装置、電気光学装置およびそれらの製造方法 | |
| JPH11163353A (ja) | ポリシリコン薄膜トランジスタ及びそれを用いたアクティブマトリクス型液晶表示装置 | |
| JPH10142624A (ja) | 電気光学装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040408 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050802 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050916 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051018 |
|
| A521 | Written amendment |
Effective date: 20051110 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A02 | Decision of refusal |
Effective date: 20060221 Free format text: JAPANESE INTERMEDIATE CODE: A02 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060309 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20060525 |
|
| A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20060623 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090202 |