JPH10321498A - 投影露光装置及び該装置を使用した露光方法 - Google Patents

投影露光装置及び該装置を使用した露光方法

Info

Publication number
JPH10321498A
JPH10321498A JP9125204A JP12520497A JPH10321498A JP H10321498 A JPH10321498 A JP H10321498A JP 9125204 A JP9125204 A JP 9125204A JP 12520497 A JP12520497 A JP 12520497A JP H10321498 A JPH10321498 A JP H10321498A
Authority
JP
Japan
Prior art keywords
projection
magnification
optical system
reticle
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP9125204A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10321498A5 (enExample
Inventor
Takechika Nishi
健爾 西
Masahiro Nei
正洋 根井
Kyoichi Suwa
恭一 諏訪
Shigeru Hirukawa
茂 蛭川
Shigeo Murakami
成郎 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP9125204A priority Critical patent/JPH10321498A/ja
Publication of JPH10321498A publication Critical patent/JPH10321498A/ja
Publication of JPH10321498A5 publication Critical patent/JPH10321498A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP9125204A 1997-05-15 1997-05-15 投影露光装置及び該装置を使用した露光方法 Abandoned JPH10321498A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9125204A JPH10321498A (ja) 1997-05-15 1997-05-15 投影露光装置及び該装置を使用した露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9125204A JPH10321498A (ja) 1997-05-15 1997-05-15 投影露光装置及び該装置を使用した露光方法

Publications (2)

Publication Number Publication Date
JPH10321498A true JPH10321498A (ja) 1998-12-04
JPH10321498A5 JPH10321498A5 (enExample) 2005-08-04

Family

ID=14904487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9125204A Abandoned JPH10321498A (ja) 1997-05-15 1997-05-15 投影露光装置及び該装置を使用した露光方法

Country Status (1)

Country Link
JP (1) JPH10321498A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243725A (ja) * 2004-02-24 2005-09-08 Tadahiro Omi スキャン型露光装置
WO2007026390A1 (ja) * 2005-08-30 2007-03-08 Tadahiro Ohmi スキャン型露光装置
JP2010109220A (ja) * 2008-10-31 2010-05-13 Nikon Corp マスクレス露光装置およびマスクレス露光方法
KR20170024004A (ko) * 2014-06-23 2017-03-06 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243725A (ja) * 2004-02-24 2005-09-08 Tadahiro Omi スキャン型露光装置
WO2007026390A1 (ja) * 2005-08-30 2007-03-08 Tadahiro Ohmi スキャン型露光装置
JP2010109220A (ja) * 2008-10-31 2010-05-13 Nikon Corp マスクレス露光装置およびマスクレス露光方法
KR20170024004A (ko) * 2014-06-23 2017-03-06 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 방법
JP2017520797A (ja) * 2014-06-23 2017-07-27 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびリソグラフィ方法
US10139735B2 (en) 2014-06-23 2018-11-27 Asml Netherlands B.V. Lithographic apparatus and method

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