JPH10242318A - Package for housing electronic components - Google Patents

Package for housing electronic components

Info

Publication number
JPH10242318A
JPH10242318A JP9043679A JP4367997A JPH10242318A JP H10242318 A JPH10242318 A JP H10242318A JP 9043679 A JP9043679 A JP 9043679A JP 4367997 A JP4367997 A JP 4367997A JP H10242318 A JPH10242318 A JP H10242318A
Authority
JP
Japan
Prior art keywords
outer peripheral
flange member
flange
package
insulating base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9043679A
Other languages
Japanese (ja)
Other versions
JP3393784B2 (en
Inventor
Kenji Iryo
健次 井料
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP04367997A priority Critical patent/JP3393784B2/en
Publication of JPH10242318A publication Critical patent/JPH10242318A/en
Application granted granted Critical
Publication of JP3393784B2 publication Critical patent/JP3393784B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Semiconductor Lasers (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a compact and high-air-tightness package for housing electronic components which never causes a flange to peel off or an insulation base to crack at welding even when the outline size of the flange is small. SOLUTION: The package comprises an insulation base 1 having a mount 1a for an electronic component 4 at the top face, a flange 9 which is fixed to the base 1 and has a periphery protrudent to the outside of the base 1, and a metal cap 2 having a flange 2a having approximately the same size as the flange 9 and welded to the periphery 9a of the flange 9. In this case, the periphery 9a is made thicker than other regions. This well relieves the thermal stress in welding, ensures a mechanical strength enough to avoid breaking the air- tightness of the package.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は光半導体素子や圧電
振動子等の電子部品を収容するための電子部品収納用パ
ッケージに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating electronic components such as optical semiconductor elements and piezoelectric vibrators.

【0002】[0002]

【従来の技術】従来、光半導体素子や圧電振動子等の電
子部品を収容するための電子部品収納用パッケージは、
図2に断面図で示すように、酸化アルミニウム質焼結体
や窒化アルミニウム質焼結体・ムライト質焼結体・炭化
珪素質焼結体・ガラスセラミックス質焼結体等の電気絶
縁材料から成り、その上面中央部に電子部品を搭載する
ための搭載部11aおよびこの搭載部11a上面から下面に
かけて導出するメタライズ配線層12を有する略円板状ま
たは角板状の絶縁基体11と、この絶縁基体11の下面に導
出したメタライズ配線層12に銀ろう等のろう材を介して
取着された外部リード端子13と、絶縁基体11の上面外周
縁に銀ろう等のろう材を介して取着され、絶縁基体11の
外周縁から水平方向に全周にわたって絶縁基体11の外側
に突出する外周部14aを有する平板環状のフランジ部材
14と、下端部にフランジ部材14と略同じ外周寸法の鍔部
15aを有する金属キャップ15とから構成されており、絶
縁基体11の搭載部11a底面に光半導体素子等の電子部品
16をろう材・ガラス・樹脂等の接着剤を介して接着固定
するとともに電子部品16の電極をボンディングワイヤ17
を介してメタライズ配線層12に電気的に接続し、しかる
後、絶縁基体11に取着されたフランジ部材14の外周部14
aに金属キャップ15の鍔部15aを溶接し、絶縁基体11と
金属キャップ15とから主に成る容器内部に電子部品16を
気密に封止することによって製品としての電子装置とな
る。
2. Description of the Related Art Conventionally, electronic component housing packages for housing electronic components such as optical semiconductor elements and piezoelectric vibrators are known.
As shown in the cross-sectional view of FIG. 2, it is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, and a glass ceramic sintered body. A substantially disk-shaped or square-plate-shaped insulating base 11 having a mounting portion 11a for mounting an electronic component at the center of the upper surface thereof and a metallized wiring layer 12 extending from the upper surface to the lower surface of the mounting portion 11a; External lead terminals 13 attached to the metallized wiring layer 12 led out to the lower surface of the insulating substrate 11 via a brazing material such as silver brazing, and attached to the outer peripheral edge of the upper surface of the insulating base 11 via a brazing material such as silver brazing. A flat annular flange member having an outer peripheral portion 14a protruding outside the insulating base 11 over the entire periphery in the horizontal direction from the outer peripheral edge of the insulating base 11
14 and a flange portion having substantially the same outer peripheral dimensions as the flange member 14 at the lower end portion
And a metal cap 15 having an upper surface 15a.
16 is bonded and fixed via an adhesive such as brazing material, glass, resin, etc., and the electrodes of the electronic component 16 are bonded to bonding wires 17.
And electrically connected to the metallized wiring layer 12 through the outer peripheral portion 14 of the flange member 14 attached to the insulating base 11.
By welding a flange portion 15a of the metal cap 15 to a, and hermetically sealing the electronic component 16 inside a container mainly composed of the insulating base 11 and the metal cap 15, an electronic device as a product is obtained.

【0003】また、絶縁基体11に取着されたフランジ部
材14と金属キャップ15との溶接は、フランジ部材14の外
周部14aと金属キャップ15の鍔部15aの外周部とを互い
に圧接しながらフランジ部材14と金属キャップ15との間
に大電流を印加し、これによってフランジ部材14と金属
キャップ15との接触部においてジュール熱を発生させ、
このジュール熱によりフランジ部材14の外周部14aと金
属キャップ15の鍔部15aとの接触部近傍を溶融させるこ
とによって行なわれる。
[0003] In addition, the flange member 14 attached to the insulating base 11 and the metal cap 15 are welded by pressing the outer peripheral portion 14a of the flange member 14 and the outer peripheral portion of the flange portion 15a of the metal cap 15 with each other. A large current is applied between the member 14 and the metal cap 15, thereby generating Joule heat at a contact portion between the flange member 14 and the metal cap 15,
This Joule heat is used to melt the vicinity of the contact portion between the outer peripheral portion 14a of the flange member 14 and the flange portion 15a of the metal cap 15.

【0004】なお、この従来の電子部品収納用パッケー
ジにおいては、パッケージの取扱いの際等にフランジ部
材14の外周部14aに外力が印加された場合でもその外力
によって外周部14aが容易に変形してフランジ部材14と
金属キャップ15との良好な溶接が不可能となるのを防止
するために、フランジ部材14の厚みを通常約0.2 mm以
上の厚いものとしている。
In this conventional package for storing electronic components, even when an external force is applied to the outer peripheral portion 14a of the flange member 14 when the package is handled, the outer peripheral portion 14a is easily deformed by the external force. In order to prevent the good welding of the flange member 14 and the metal cap 15 from being impossible, the thickness of the flange member 14 is usually set to be about 0.2 mm or more.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、この従
来の電子部品収納用パッケージにおいては、フランジ部
材14の厚みが約0.2 mm以上と厚いことから、電子装置
の小型化を図るためにフランジ部材の外周寸法を小さい
ものとした場合、その結果として外周部14aが絶縁基体
11から突出する突出幅が約0.5 mm未満の狭いものとな
るとフランジ部材14の外周部14aが撓みにくいものとな
るため、フランジ部材14に金属キャップ15を溶接する際
の熱によりフランジ部材14に大きな熱応力が印加される
と、その応力の大部分がフランジ部材14に吸収されるこ
となく絶縁基体11とフランジ部材14との接合部に印加さ
れることとなり、フランジ部材14が絶縁基体11から剥が
れたり絶縁基体11にクラックが発生したりして、容器の
気密が破れてしまうという欠点を誘発していた。
However, in this conventional package for housing electronic parts, the thickness of the flange member 14 is as large as about 0.2 mm or more. When the size is reduced, the outer peripheral portion 14a is
If the protrusion width protruding from the flange 11 is less than about 0.5 mm, the outer peripheral portion 14a of the flange member 14 is difficult to bend. When the thermal stress is applied, most of the stress is applied to the joint between the insulating base 11 and the flange member 14 without being absorbed by the flange member 14, and the flange member 14 is peeled from the insulating base 11. Or the cracks occur in the insulating base 11, causing a drawback that the airtightness of the container is broken.

【0006】本発明は上記事情に鑑みて案出されたもの
であり、その目的は、フランジ部材の外周寸法を小さい
ものとした場合でも溶接の際にフランジ部材の剥がれや
絶縁基体のクラックが発生することがない、小型で気密
性に優れた電子部品収納用パッケージを提供することに
ある。
The present invention has been made in view of the above circumstances, and an object of the present invention is to cause peeling of a flange member and cracking of an insulating base during welding even when the outer peripheral dimension of the flange member is reduced. It is an object of the present invention to provide a small and highly airtight electronic component storage package that does not need to be mounted.

【0007】[0007]

【課題を解決するための手段】本発明の電子部品収納用
パッケージは、上面に電子部品が搭載される搭載部を有
する絶縁基体と、この絶縁基体の外周縁に取着され、外
周部が絶縁基体の外側に突出する平板環状のフランジ部
材と、このフランジ部材と略同じ外周寸法の鍔部を下端
に有し、この鍔部が溶接によりフランジ部材に接合され
る金属キャップとから成る電子部品収納用パッケージに
おいて、前記フランジ部材は、外周側の厚みがその他の
領域の厚みより厚いことを特徴とするものである。
According to the present invention, there is provided an electronic component storage package having an insulating base having a mounting portion on which an electronic component is mounted on an upper surface, and an outer peripheral portion attached to an outer peripheral edge of the insulating base. An electronic component housing comprising: a flat annular flange member protruding outside the base; and a metal cap having at its lower end a flange portion having substantially the same outer peripheral dimension as the flange member, the flange portion being joined to the flange member by welding. The thickness of the outer peripheral side of the flange member is larger than the thickness of other regions.

【0008】本発明の電子部品収納用パッケージによれ
ば、金属キャップが溶接されるフランジ部材は、その厚
みが外周部の外周側でその他の領域の厚みより厚いこと
から、溶接時の熱による熱応力がフランジ部材に作用し
たとしてもその応力はフランジ部材の外周部の内側の厚
みの薄い部分が撓むことにより良好に吸収緩和されると
ともに、外周部の外周側の厚みが厚いことからフランジ
部材の機械的強度が保たれる。従って、溶接の際のフラ
ンジ部材の剥がれや絶縁基体のクラックが発生すること
がない小型で気密性に優れた電子部品収納用パッケージ
となる。
According to the electronic component housing package of the present invention, since the thickness of the flange member to which the metal cap is welded is greater on the outer peripheral side of the outer peripheral portion than on the other regions, the heat generated by the heat during welding is obtained. Even if stress acts on the flange member, the stress is favorably absorbed and reduced by bending the thin portion inside the outer peripheral portion of the flange member, and the flange member is thickened on the outer peripheral side of the outer peripheral portion. Mechanical strength is maintained. Therefore, a small and airtight electronic component storage package free of peeling of the flange member and cracking of the insulating base during welding can be obtained.

【0009】[0009]

【発明の実施の形態】次に本発明を添付の図面を基に説
明する。図1は本発明の電子部品収納用パッケージを光
半導体素子を収容するための電子部品収納用パッケージ
に適用した場合の実施の形態の一例を示す断面図であ
る。同図において1は絶縁基体、2は金属キャップであ
り、主にこの絶縁基体1と金属キャップ2とで内部に電
子部品(光半導体素子)4を気密に収容する容器3が構
成される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the accompanying drawings. FIG. 1 is a sectional view showing an example of an embodiment in which the electronic component housing package of the present invention is applied to an electronic component housing package for housing an optical semiconductor element. In FIG. 1, reference numeral 1 denotes an insulating base, and 2 denotes a metal cap. The insulating base 1 and the metal cap 2 mainly constitute a container 3 in which an electronic component (optical semiconductor element) 4 is hermetically accommodated.

【0010】絶縁基体1にはその上面中央部に光半導体
素子4を搭載するための搭載部1aが設けてあり、この
搭載部1a上面には光半導体素子4が導電性のろう材や
樹脂・ガラス等の接着剤を介して接着固定される。
A mounting portion 1a for mounting the optical semiconductor element 4 is provided at the center of the upper surface of the insulating base 1. On the upper surface of the mounting portion 1a, the optical semiconductor element 4 is provided with a conductive brazing material or resin. It is bonded and fixed via an adhesive such as glass.

【0011】絶縁基体1は、酸化アルミニウム質焼結体
・窒化アルミニウム質焼結体・ムライト質焼結体・炭化
珪素質焼結体・ガラスセラミック焼結体等の電気絶縁材
料から成る略円板体または角板体であり、例えば酸化ア
ルミニウム質焼結体から成る場合は、酸化アルミニウム
・酸化珪素・酸化カルシウム・酸化マグネシウム等の原
料粉末に適当なバインダや溶剤を添加混合して泥漿状と
なすとともにこれを従来周知のドクターブレード法等を
採用してシート状となすことによって複数枚のセラミッ
クグリーンシートを得、しかる後、これらセラミックグ
リーンシートの各々に適当な打ち抜き加工を施すととも
にこれらを上下に積層し、高温(約1600℃)で焼成する
ことによって製作される。
The insulating substrate 1 is a substantially disc made of an electrically insulating material such as a sintered body of aluminum oxide, a sintered body of aluminum nitride, a sintered body of mullite, a sintered body of silicon carbide, and a sintered body of glass ceramic. When it is made of, for example, an aluminum oxide sintered body, an appropriate binder or a solvent is added to and mixed with a raw material powder of aluminum oxide, silicon oxide, calcium oxide, magnesium oxide, etc. to form a slurry. Along with this, a plurality of ceramic green sheets are obtained by adopting a conventionally known doctor blade method or the like into a sheet shape, and thereafter, each of these ceramic green sheets is subjected to an appropriate punching process and these are vertically It is manufactured by laminating and firing at a high temperature (about 1600 ° C.).

【0012】また絶縁基体1には搭載部1a上面から下
面にかけて複数個のメタライズ配線5が被着形成されて
おり、このメタライズ配線5の搭載部1a上面の部位に
は光半導体素子4の底面および電極が導電性の接着剤お
よびボンディングワイヤ6を介して電気的に接続され、
他方、絶縁基体1の下面に導出された部位には外部電気
回路基板に接続されるピン状の外部リード端子7が銀ろ
う等のろう材を介して取着されている。
A plurality of metallized wirings 5 are formed on the insulating substrate 1 from the upper surface to the lower surface of the mounting portion 1a. The electrodes are electrically connected via a conductive adhesive and a bonding wire 6,
On the other hand, a pin-shaped external lead terminal 7 connected to an external electric circuit board is attached to a portion led out to the lower surface of the insulating base 1 via a brazing material such as silver brazing.

【0013】メタライズ配線5はタングステンやモリブ
デン・モリブデン−マンガン・銅・銀・銀−パラジウム
等の金属粉末焼結体から成り、例えばタングステンから
成る場合は、タングステン粉末に適当な有機バインダや
溶剤を添加混合して得た金属ペーストを絶縁基体1とな
るセラミックグリーンシートに予め従来周知のスクリー
ン印刷法により所定パターンに印刷塗布し、これをセラ
ミックグリーンシートと同時に焼成することによって絶
縁基体1の搭載部1a上面から下面にかけて被着形成さ
れる。
The metallized wiring 5 is made of a metal powder sintered body such as tungsten or molybdenum / molybdenum-manganese / copper / silver / silver / palladium. The metal paste obtained by mixing is preliminarily printed and applied in a predetermined pattern on a ceramic green sheet serving as the insulating substrate 1 by a conventionally known screen printing method, and is fired simultaneously with the ceramic green sheet to thereby mount the mounting portion 1a of the insulating substrate 1. It is formed from the upper surface to the lower surface.

【0014】なお、メタライズ配線5には通常、メタラ
イズ配線5が酸化腐食するのを有効に防止するとともに
メタライズ配線5と導電性接着剤およびボンディングワ
イヤ6との接続性を良好なものとするために、その露出
表面にニッケルめっき層と金めっき層とが順次被着され
ている。
The metallized wiring 5 is usually used to effectively prevent the metallized wiring 5 from being oxidized and corroded, and to improve the connectivity between the metallized wiring 5 and the conductive adhesive and the bonding wire 6. On the exposed surface, a nickel plating layer and a gold plating layer are sequentially applied.

【0015】絶縁基体1は、またその上面の外周縁に環
状のメタライズ金属層8が被着形成されており、このメ
タライズ金属層8にフランジ部材9が銀ろう等のろう材
を介して取着されている。
The insulating base 1 has an annular metallized metal layer 8 formed on the outer peripheral edge of the upper surface thereof, and a flange member 9 is attached to the metallized metal layer 8 via a brazing material such as silver solder. Have been.

【0016】この環状のメタライズ金属層8はタングス
テンやモリブデン・モリブデン−マンガン・銅・銀・銀
−パラジウム等の金属粉末焼結体から成り、絶縁基体1
にフランジ部材9を接合させるための下地金属として作
用する。例えばタングステンから成る場合は、タングス
テン粉末に適当なバインダや溶剤を添加混合して得た金
属ペーストを絶縁基体1となるセラミックグリーンシー
ト上に所定パターンに印刷し、これをセラミックグリー
ンシートと同時に焼成することによって絶縁基体1の上
面の外周縁に環状に被着される。
The annular metallized metal layer 8 is made of a sintered metal powder such as tungsten or molybdenum / molybdenum-manganese / copper / silver / silver / palladium.
Acts as a base metal for bonding the flange member 9 to the base member. For example, when it is made of tungsten, a metal paste obtained by adding and mixing an appropriate binder and a solvent to tungsten powder is printed in a predetermined pattern on a ceramic green sheet serving as the insulating substrate 1, and is fired simultaneously with the ceramic green sheet. Thus, the insulating substrate 1 is annularly attached to the outer peripheral edge of the upper surface.

【0017】なお、この環状のメタライズ金属層8は必
要に応じてメタライズ配線層5の一部に電気的に接続さ
れており、通常、その表面にはニッケルめっき層や金め
っき層等のろう材との濡れ性に優れ且つ耐食性に優れる
めっき金属層が被着されている。
The annular metallized metal layer 8 is electrically connected to a part of the metallized wiring layer 5 if necessary, and its surface is usually provided with a brazing material such as a nickel plating layer or a gold plating layer. A plated metal layer having excellent wettability and excellent corrosion resistance.

【0018】また、メタライズ金属層8にろう付取着さ
れたフランジ部材9は、鉄−ニッケル合金や鉄−ニッケ
ル−コバルト合金等の金属から成り、絶縁基体1の外周
縁から水平方向に全周にわたり絶縁基体の外側に突出す
る外周部9aを有する平板環状体であり、更に外周部9
aの内周側でその厚みが例えば0.1 mm程度と薄く、ま
た外周部9aの外周側でその厚みが例えば0.2 mm程度
と厚いものとなっている。
The flange member 9 brazed to the metallized metal layer 8 is made of a metal such as an iron-nickel alloy or an iron-nickel-cobalt alloy. Is a flat plate-shaped annular body having an outer peripheral portion 9a protruding outside the insulating base over the outer peripheral portion 9a.
The thickness on the inner peripheral side of a is as small as about 0.1 mm, and the thickness on the outer peripheral side of the outer peripheral portion 9a is as large as about 0.2 mm, for example.

【0019】このフランジ部材9は金属キャップ2を絶
縁基体1に接合させるための接合金具として作用し、そ
の外周部9aには金属キャップ2が溶接により接合され
る。
The flange member 9 functions as a joint for joining the metal cap 2 to the insulating base 1. The metal cap 2 is joined to the outer peripheral portion 9a by welding.

【0020】ここで、フランジ部材9はその厚みが外周
部9aの内周側で薄いことから、外周部9aに金属キャ
ップ2を溶接する際に溶接の熱による熱応力が外周部9
aに作用したとしてもその応力は外周部9aの厚みが薄
い内周側が撓むことにより良好に吸収緩和され、その結
果、フランジ部材9が絶縁基体1から剥がれたり絶縁基
体1にクラックが発生することが有効に防止される。
Here, since the thickness of the flange member 9 is thin on the inner peripheral side of the outer peripheral portion 9a, when the metal cap 2 is welded to the outer peripheral portion 9a, thermal stress caused by welding heat is applied to the outer peripheral portion 9a.
Even if the stress acts on the insulating substrate 1, the stress is favorably absorbed and relaxed by bending the inner peripheral side where the outer peripheral portion 9 a is thin, and as a result, the flange member 9 is peeled from the insulating substrate 1 or a crack is generated in the insulating substrate 1. Is effectively prevented.

【0021】フランジ部材9は、その外周部9aの内周
側で厚みの薄い部分の幅がその部分の厚みに対して2.5
倍未満となると、外周部9aの内周側が撓みにくいもの
となって、外周部9aに金属キャップ2を溶接する際に
溶接の熱による応力を撓むことにより良好に吸収緩和す
ることが困難となる傾向にある。従って、フランジ部材
9は、その外周部9aの内周側で厚みの薄い部分の幅が
その部分の厚みに対して2.5 倍以上の幅であることが好
ましい。
The width of the thin portion on the inner peripheral side of the outer peripheral portion 9a of the flange member 9 is 2.5 times the thickness of the portion.
If it is less than twice, the inner peripheral side of the outer peripheral portion 9a is less likely to bend, and it is difficult to satisfactorily absorb and relax by bending the stress due to welding heat when welding the metal cap 2 to the outer peripheral portion 9a. Tend to be. Therefore, it is preferable that the width of the thin portion of the flange member 9 on the inner peripheral side of the outer peripheral portion 9a is 2.5 times or more the thickness of the portion.

【0022】また、フランジ部材9は、その厚みが外周
部9aの外周側で厚いことから、この厚みの厚い外周側
で外周部9aの機械的強度が保たれ、その結果、パッケ
ージの取り扱いの際等にフランジ部材9の外周部9aに
外力が印加されてもその外力により外周部9aが容易に
変形することはなく、従って、フランジ部材9と金属キ
ャップ2とを溶接により接合する際にフランジ部材9と
金属キャップ2とを良好に溶接させることが可能とな
る。
Further, since the flange member 9 has a large thickness on the outer peripheral side of the outer peripheral portion 9a, the mechanical strength of the outer peripheral portion 9a is maintained on the outer peripheral side where the thickness is large. As a result, when the package is handled, Even when an external force is applied to the outer peripheral portion 9a of the flange member 9, the outer peripheral portion 9a is not easily deformed by the external force. Therefore, when the flange member 9 and the metal cap 2 are joined by welding, the flange member 9 9 and the metal cap 2 can be satisfactorily welded.

【0023】フランジ部材9は、その外周部9aの外周
側で厚みの厚い部分の厚みが0.2 mm未満では、外周部
9aに外力が印加された際に外周部9aが容易に変形し
易い傾向にある。従ってフランジ部材9は、その外周部
9aの外周側で厚みの厚い部分の厚みが0.2 mm以上で
あることが好ましい。
If the thickness of the thick portion on the outer peripheral side of the outer peripheral portion 9a is less than 0.2 mm, the outer peripheral portion 9a tends to be easily deformed when an external force is applied to the outer peripheral portion 9a. is there. Therefore, it is preferable that the thickness of the flange member 9 on the outer peripheral side of the outer peripheral portion 9a is 0.2 mm or more.

【0024】なお、フランジ部材9の絶縁基体1への取
着は、例えば絶縁基体1の上面に被着させたメタライズ
金属層8上に銀ろう等のろう材箔を環状に形成したろう
材プリフォームとフランジ部材9とを順次載置し、しか
る後、このろう材プリフォームを加熱溶融させることに
よってメタライズ金属層8上に取着され、絶縁基体1の
外周縁に取着される。
The flange member 9 is attached to the insulating base 1 by, for example, forming a brazing material such as silver brazing on the metallized metal layer 8 attached to the upper surface of the insulating base 1 in an annular shape. The reform and the flange member 9 are sequentially placed, and thereafter, the brazing filler metal preform is attached by heating and melting to the metallized metal layer 8 and attached to the outer peripheral edge of the insulating base 1.

【0025】フランジ部材9に溶接される金属キャップ
2は、例えば鉄−ニッケル合金や鉄−ニッケル−コバル
ト合金等の金属から成り、下端部にこのフランジ部材9
と略同じ外周寸法の鍔部2aを、上端部にガラス等の透
光性材料から成る窓部材2bを有するシルクハット形状
の容器部材であり、内部に光半導体素子4を収容するた
めの空所が形成されており、絶縁基体1に取着されたフ
ランジ部材9に鍔部2aが溶接されることにより、絶縁
基体1と金属キャップ2とから主に成る容器3内部に光
半導体素子4が気密に封止され、また窓部材9bを透し
て光半導体素子4と外部との光信号の授受を行なうこと
が可能となる。
The metal cap 2 to be welded to the flange member 9 is made of a metal such as an iron-nickel alloy or an iron-nickel-cobalt alloy.
A silk hat-shaped container member having a flange portion 2a having substantially the same outer peripheral dimension as that of the above and a window member 2b made of a translucent material such as glass at an upper end portion, and a space for accommodating the optical semiconductor element 4 therein. Is formed, and the flange portion 2a is welded to the flange member 9 attached to the insulating base 1, so that the optical semiconductor element 4 is hermetically sealed inside the container 3 mainly composed of the insulating base 1 and the metal cap 2. The optical signal can be transmitted and received between the optical semiconductor element 4 and the outside through the window member 9b.

【0026】なお、金属キャップ2のフランジ部材9へ
の溶接は、フランジ部材9の外周部9aの外周部と金属
キャップ2の鍔部2aの外周部とを互いに圧接しなが
ら、フランジ部材9と金属キャップ2との間に大電流を
印加し、これによってフランジ部材9と金属キャップ2
との接触部においてジュール熱を発生させ、このジュー
ル発熱によりフランジ部材9および金属キャップ2の接
触部近傍を溶融させることによって行なわれる。
The welding of the metal cap 2 to the flange member 9 is performed by pressing the outer peripheral portion 9a of the flange member 9 and the outer peripheral portion of the flange portion 2a of the metal cap 2 against each other while pressing the outer peripheral portion 9a of the flange member 9 against the metal. A large current is applied between the flange member 9 and the metal cap 2.
This is performed by generating Joule heat at the contact portion with the flange member 9 and melting the vicinity of the contact portion between the flange member 9 and the metal cap 2 by the Joule heat.

【0027】かくして本発明の電子部品収納用パッケー
ジによれば、絶縁基体1の搭載部1a上面に光半導体素
子4を接着剤を介して接着固定するとともに光半導体素
子4の各電極をボンディングワイヤ6を介してメタライ
ズ配線層5に電気的に接続し、しかる後、絶縁基体1に
取着させたフランジ部材9に金属キャップ2を溶接し、
絶縁基体1と金属キャップ2とから成る容器3内部に光
半導体素子4を気密に封止することによって製品として
の電子装置となる。
Thus, according to the electronic component housing package of the present invention, the optical semiconductor element 4 is bonded and fixed to the upper surface of the mounting portion 1a of the insulating base 1 with an adhesive, and each electrode of the optical semiconductor element 4 is connected to the bonding wire 6. Is electrically connected to the metallized wiring layer 5 through the metal cap 2, and then the metal cap 2 is welded to the flange member 9 attached to the insulating base 1,
An electronic device as a product is obtained by hermetically sealing the optical semiconductor element 4 inside the container 3 including the insulating base 1 and the metal cap 2.

【0028】なお、本発明は上述の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
であれば種々の変更は可能である。例えば、上述の実施
の形態の例では光半導体素子を収容する電子部品収納用
パッケージを例に説明したが、本発明の電子部品収納用
パッケージは圧電振動子等の他の電子部品を収容する電
子部品収納用パッケージに適用され得ることは言うまで
もない。
The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention. For example, in the example of the above-described embodiment, an electronic component housing package for housing an optical semiconductor element has been described as an example. However, the electronic component housing package of the present invention is an electronic housing for housing other electronic components such as a piezoelectric vibrator. It goes without saying that the present invention can be applied to a component storage package.

【0029】[0029]

【発明の効果】本発明の電子部品収納用パッケージによ
れば、絶縁基体の外周縁に取着され金属キャップが溶接
される平板環状のフランジ部材の厚みが外周部の外周側
で厚いことから、電子装置の小型化を図るためにフラン
ジ部材の外周寸法を小さいものとした結果、外周部が絶
縁基体から突出する突出幅が狭いものとなったとして
も、この外周部に金属キャップを溶接する際に溶接の熱
により発生する熱応力はフランジ部材の外周部の厚みが
薄い内周側が撓むことにより良好に吸収緩和され、その
結果、フランジ部材が絶縁基体から剥がれたり絶縁基体
にクラックが発生することが有効に防止される。更に、
フランジ部材はその厚みが外周部の外周側で厚いことか
ら、この厚みの厚い外周側で外周部の機械的強度が保た
れる結果、パッケージの取扱いの際等にフランジ部材の
外周部に外力が印加されてもその外力により外周部が容
易に変形することはない。従って、フランジ部材と金属
キャップとを溶接により接合する際、フランジ部材と金
属キャップとを良好に溶接させることが可能となり、小
型で気密性に優れる電子部品収納用パッケージが実現で
きる。
According to the electronic component housing package of the present invention, the thickness of the flat annular flange member attached to the outer peripheral edge of the insulating base and to which the metal cap is welded is large on the outer peripheral side of the outer peripheral portion. As a result of reducing the outer diameter of the flange member in order to reduce the size of the electronic device, even when the outer width of the outer peripheral portion is narrower than that of the insulating base, a metal cap is welded to the outer peripheral portion. The thermal stress generated by the heat of welding is favorably absorbed and mitigated by bending the inner peripheral side where the outer peripheral portion of the flange member has a small thickness, and as a result, the flange member peels off from the insulating base or cracks occur in the insulating base. Is effectively prevented. Furthermore,
Since the thickness of the flange member is large at the outer peripheral side of the outer peripheral portion, the mechanical strength of the outer peripheral portion is maintained at the thicker outer peripheral side. As a result, external force is applied to the outer peripheral portion of the flange member when handling a package or the like. Even if the external force is applied, the outer peripheral portion is not easily deformed. Therefore, when the flange member and the metal cap are joined by welding, the flange member and the metal cap can be satisfactorily welded, and a compact and highly airtight electronic component housing package can be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電子部品収納用パッケージを光半導体
素子を収容する電子部品収納用パッケージに適用した場
合の実施の形態の一例を示す断面図である。
FIG. 1 is a cross-sectional view showing an example of an embodiment in which an electronic component housing package of the present invention is applied to an electronic component housing package for housing an optical semiconductor element.

【図2】従来の電子部品収納用パッケージを示す断面図
である。
FIG. 2 is a cross-sectional view showing a conventional electronic component storage package.

【符号の説明】[Explanation of symbols]

1・・・・絶縁基体 2・・・・金属キャップ 2a・・・鍔部 3・・・・容器 4・・・・光半導体素子(電子部品) 9・・・・フランジ部材 9a・・・外周部 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Metal cap 2a ... Flange 3 ... Container 4 ... Optical semiconductor element (electronic component) 9 ... Flange member 9a ... Outer periphery Department

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 上面に電子部品が搭載される搭載部を有
する絶縁基体と、該絶縁基体の外周縁に取着され、外周
部が絶縁基体の外側に突出する平板環状のフランジ部材
と、該フランジ部材と略同じ外周寸法の鍔部を下端に有
し、該鍔部が溶接によりフランジ部材に接合される金属
キャップとから成る電子部品収納用パッケージにおい
て、前記フランジ部材は、外周側の厚みがその他の領域
の厚みより厚いことを特徴とする電子部品収納用パッケ
ージ。
An insulating base having a mounting portion on which an electronic component is mounted on an upper surface; a flat annular flange member attached to an outer peripheral edge of the insulating base and having an outer peripheral portion protruding outside the insulating base; An electronic component storage package comprising, at the lower end, a flange having substantially the same outer peripheral dimension as the flange member, and the flange is joined to the flange member by welding, wherein the flange member has a thickness on the outer peripheral side. An electronic component storage package characterized by being thicker than other regions.
JP04367997A 1997-02-27 1997-02-27 Electronic component storage package Expired - Fee Related JP3393784B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04367997A JP3393784B2 (en) 1997-02-27 1997-02-27 Electronic component storage package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04367997A JP3393784B2 (en) 1997-02-27 1997-02-27 Electronic component storage package

Publications (2)

Publication Number Publication Date
JPH10242318A true JPH10242318A (en) 1998-09-11
JP3393784B2 JP3393784B2 (en) 2003-04-07

Family

ID=12670533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04367997A Expired - Fee Related JP3393784B2 (en) 1997-02-27 1997-02-27 Electronic component storage package

Country Status (1)

Country Link
JP (1) JP3393784B2 (en)

Also Published As

Publication number Publication date
JP3393784B2 (en) 2003-04-07

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