JPH10209392A5 - - Google Patents

Info

Publication number
JPH10209392A5
JPH10209392A5 JP1997009480A JP948097A JPH10209392A5 JP H10209392 A5 JPH10209392 A5 JP H10209392A5 JP 1997009480 A JP1997009480 A JP 1997009480A JP 948097 A JP948097 A JP 948097A JP H10209392 A5 JPH10209392 A5 JP H10209392A5
Authority
JP
Japan
Prior art keywords
layer
thin film
metal
insulating layer
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997009480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10209392A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9009480A priority Critical patent/JPH10209392A/ja
Priority claimed from JP9009480A external-priority patent/JPH10209392A/ja
Publication of JPH10209392A publication Critical patent/JPH10209392A/ja
Priority to US09/524,285 priority patent/US6355492B1/en
Publication of JPH10209392A5 publication Critical patent/JPH10209392A5/ja
Pending legal-status Critical Current

Links

JP9009480A 1997-01-22 1997-01-22 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法 Pending JPH10209392A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9009480A JPH10209392A (ja) 1997-01-22 1997-01-22 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法
US09/524,285 US6355492B1 (en) 1997-01-22 2000-03-13 Process for the manufacturing of oxide electrodes for ferroelectric capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9009480A JPH10209392A (ja) 1997-01-22 1997-01-22 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法

Publications (2)

Publication Number Publication Date
JPH10209392A JPH10209392A (ja) 1998-08-07
JPH10209392A5 true JPH10209392A5 (https=) 2004-08-26

Family

ID=11721423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9009480A Pending JPH10209392A (ja) 1997-01-22 1997-01-22 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法

Country Status (2)

Country Link
US (1) US6355492B1 (https=)
JP (1) JPH10209392A (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545856B1 (en) * 1998-11-30 2003-04-08 Interuniversitair Microelectronica Centrum (Imec) Method of fabrication of a ferro-electric capacitor and method of growing a PZT layer on a substrate
KR100333669B1 (ko) * 1999-06-28 2002-04-24 박종섭 레드니오비움지르코니움타이타니트 용액 형성 방법 및 그를 이용한 강유전체 캐패시터 제조 방법
JP3545279B2 (ja) * 1999-10-26 2004-07-21 富士通株式会社 強誘電体キャパシタ、その製造方法、および半導体装置
US6475854B2 (en) * 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
US7253076B1 (en) * 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
KR100612561B1 (ko) * 2000-06-19 2006-08-11 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP2002100740A (ja) 2000-09-21 2002-04-05 Oki Electric Ind Co Ltd 半導体記憶素子及びその製造方法
US7378719B2 (en) * 2000-12-20 2008-05-27 Micron Technology, Inc. Low leakage MIM capacitor
US7105444B2 (en) 2001-07-19 2006-09-12 Samsung Electronics Co., Ltd. Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
US20030036242A1 (en) * 2001-08-16 2003-02-20 Haining Yang Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
AU2003234817A1 (en) * 2002-05-17 2003-12-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device and its manufacturing method
KR100487528B1 (ko) 2002-06-26 2005-05-03 삼성전자주식회사 피로 현상을 억제하기 위한 금속산화막을 갖는 강유전체캐패시터 및 그 제조방법
JP4593204B2 (ja) * 2004-08-24 2010-12-08 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリの製造方法
JP2009105137A (ja) * 2007-10-22 2009-05-14 Fujitsu Ltd 半導体装置の製造方法
US8445913B2 (en) 2007-10-30 2013-05-21 Spansion Llc Metal-insulator-metal (MIM) device and method of formation thereof
KR20240106530A (ko) * 2022-12-29 2024-07-08 매그나칩 반도체 유한회사 반도체 소자 및 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982309A (en) * 1989-07-17 1991-01-01 National Semiconductor Corporation Electrodes for electrical ceramic oxide devices
US5003428A (en) * 1989-07-17 1991-03-26 National Semiconductor Corporation Electrodes for ceramic oxide capacitors
EP0557937A1 (en) * 1992-02-25 1993-09-01 Ramtron International Corporation Ozone gas processing for ferroelectric memory circuits
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
JP3363301B2 (ja) * 1995-03-08 2003-01-08 シャープ株式会社 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ
US5708302A (en) * 1995-04-26 1998-01-13 Symetrix Corporation Bottom electrode structure for dielectric capacitors
JPH09102591A (ja) * 1995-07-28 1997-04-15 Toshiba Corp 半導体装置及びその製造方法
US5695815A (en) * 1996-05-29 1997-12-09 Micron Technology, Inc. Metal carboxylate complexes for formation of metal-containing films on semiconductor devices
JP3587004B2 (ja) * 1996-11-05 2004-11-10 ソニー株式会社 半導体メモリセルのキャパシタ構造及びその作製方法
US5807774A (en) * 1996-12-06 1998-09-15 Sharp Kabushiki Kaisha Simple method of fabricating ferroelectric capacitors

Similar Documents

Publication Publication Date Title
JP4535076B2 (ja) 強誘電体キャパシタとその製造方法
US5831299A (en) Thin ferroelectric film element having a multi-layered thin ferroelectric film and method for manufacturing the same
JP3587004B2 (ja) 半導体メモリセルのキャパシタ構造及びその作製方法
JPH10209392A5 (https=)
US7605007B2 (en) Semiconductor device and method of manufacturing the same
JP2003174146A (ja) 強誘電体キャパシタおよびその製造方法
JP2877618B2 (ja) 強誘電体膜の形成方法
JP2001007299A (ja) 多層状電極の鉛ゲルマネート強誘電体構造およびその堆積方法
US6355492B1 (en) Process for the manufacturing of oxide electrodes for ferroelectric capacitor
EP0781736A2 (en) Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film
JP4859840B2 (ja) 強誘電体メモリ装置およびその製造方法、半導体装置の製造方法
JP2002151656A (ja) 半導体装置及びその製造方法
JP4164700B2 (ja) 強誘電体メモリおよびその製造方法
JP2007088147A (ja) 半導体装置およびその製造方法
TW475223B (en) Method for the production of a micro-electronic structure
JP2002094023A (ja) 強誘電体膜の形成方法と強誘電体容量素子の製造方法
JPH09102587A (ja) 強誘電体薄膜素子
JPH11261028A (ja) 薄膜キャパシタ
JP5061902B2 (ja) 強誘電体メモリ装置およびその製造方法、半導体装置の製造方法
Lee et al. Integration of Ferroelectric Random Access Memory Devices with Ir/IrO2/Pb (Zr x Ti1-x) O3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb (Zr x Ti1-x) O3
JP4928098B2 (ja) 強誘電体キャパシタの製造方法
JPH09321234A (ja) 強誘電体薄膜素子の製造方法、強誘電体薄膜素子、及び強誘電体メモリ素子
JP3819003B2 (ja) 容量素子及びその製造方法
JPH1192922A (ja) 誘電体膜形成用スパッタリングターゲット、その製造方法および強誘電体メモリの製造方法
JPH11274419A (ja) 薄膜キャパシタ