JPH10209392A - 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法 - Google Patents

半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法

Info

Publication number
JPH10209392A
JPH10209392A JP9009480A JP948097A JPH10209392A JP H10209392 A JPH10209392 A JP H10209392A JP 9009480 A JP9009480 A JP 9009480A JP 948097 A JP948097 A JP 948097A JP H10209392 A JPH10209392 A JP H10209392A
Authority
JP
Japan
Prior art keywords
capacitor
layer
memory cell
semiconductor memory
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9009480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10209392A5 (https=
Inventor
Naohiro Tanaka
均洋 田中
Miho Ami
美保 網
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9009480A priority Critical patent/JPH10209392A/ja
Publication of JPH10209392A publication Critical patent/JPH10209392A/ja
Priority to US09/524,285 priority patent/US6355492B1/en
Publication of JPH10209392A5 publication Critical patent/JPH10209392A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9009480A 1997-01-22 1997-01-22 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法 Pending JPH10209392A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9009480A JPH10209392A (ja) 1997-01-22 1997-01-22 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法
US09/524,285 US6355492B1 (en) 1997-01-22 2000-03-13 Process for the manufacturing of oxide electrodes for ferroelectric capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9009480A JPH10209392A (ja) 1997-01-22 1997-01-22 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法

Publications (2)

Publication Number Publication Date
JPH10209392A true JPH10209392A (ja) 1998-08-07
JPH10209392A5 JPH10209392A5 (https=) 2004-08-26

Family

ID=11721423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9009480A Pending JPH10209392A (ja) 1997-01-22 1997-01-22 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法

Country Status (2)

Country Link
US (1) US6355492B1 (https=)
JP (1) JPH10209392A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036030A (ja) * 1999-06-28 2001-02-09 Hyundai Electronics Ind Co Ltd 半導体デバイス及びその製造方法
JP2002531943A (ja) * 1998-11-30 2002-09-24 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法
US6579753B2 (en) 2000-09-21 2003-06-17 Oki Electric Industry Co., Ltd. Method of fabricating a semiconductor storage device having a transistor unit and a ferroelectric capacitor
JP2006066414A (ja) * 2004-08-24 2006-03-09 Oki Electric Ind Co Ltd 強誘電体メモリの製造方法
JP2009105137A (ja) * 2007-10-22 2009-05-14 Fujitsu Ltd 半導体装置の製造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3545279B2 (ja) * 1999-10-26 2004-07-21 富士通株式会社 強誘電体キャパシタ、その製造方法、および半導体装置
US6475854B2 (en) * 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
US7253076B1 (en) * 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
KR100612561B1 (ko) * 2000-06-19 2006-08-11 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US7378719B2 (en) * 2000-12-20 2008-05-27 Micron Technology, Inc. Low leakage MIM capacitor
US7105444B2 (en) 2001-07-19 2006-09-12 Samsung Electronics Co., Ltd. Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
US20030036242A1 (en) * 2001-08-16 2003-02-20 Haining Yang Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
AU2003234817A1 (en) * 2002-05-17 2003-12-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device and its manufacturing method
KR100487528B1 (ko) 2002-06-26 2005-05-03 삼성전자주식회사 피로 현상을 억제하기 위한 금속산화막을 갖는 강유전체캐패시터 및 그 제조방법
US8445913B2 (en) 2007-10-30 2013-05-21 Spansion Llc Metal-insulator-metal (MIM) device and method of formation thereof
KR20240106530A (ko) * 2022-12-29 2024-07-08 매그나칩 반도체 유한회사 반도체 소자 및 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982309A (en) * 1989-07-17 1991-01-01 National Semiconductor Corporation Electrodes for electrical ceramic oxide devices
US5003428A (en) * 1989-07-17 1991-03-26 National Semiconductor Corporation Electrodes for ceramic oxide capacitors
EP0557937A1 (en) * 1992-02-25 1993-09-01 Ramtron International Corporation Ozone gas processing for ferroelectric memory circuits
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
JP3363301B2 (ja) * 1995-03-08 2003-01-08 シャープ株式会社 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ
US5708302A (en) * 1995-04-26 1998-01-13 Symetrix Corporation Bottom electrode structure for dielectric capacitors
JPH09102591A (ja) * 1995-07-28 1997-04-15 Toshiba Corp 半導体装置及びその製造方法
US5695815A (en) * 1996-05-29 1997-12-09 Micron Technology, Inc. Metal carboxylate complexes for formation of metal-containing films on semiconductor devices
JP3587004B2 (ja) * 1996-11-05 2004-11-10 ソニー株式会社 半導体メモリセルのキャパシタ構造及びその作製方法
US5807774A (en) * 1996-12-06 1998-09-15 Sharp Kabushiki Kaisha Simple method of fabricating ferroelectric capacitors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002531943A (ja) * 1998-11-30 2002-09-24 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法
JP4772188B2 (ja) * 1998-11-30 2011-09-14 アイメック 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法
JP2001036030A (ja) * 1999-06-28 2001-02-09 Hyundai Electronics Ind Co Ltd 半導体デバイス及びその製造方法
US6579753B2 (en) 2000-09-21 2003-06-17 Oki Electric Industry Co., Ltd. Method of fabricating a semiconductor storage device having a transistor unit and a ferroelectric capacitor
JP2006066414A (ja) * 2004-08-24 2006-03-09 Oki Electric Ind Co Ltd 強誘電体メモリの製造方法
JP2009105137A (ja) * 2007-10-22 2009-05-14 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
US6355492B1 (en) 2002-03-12

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