JPH10209008A5 - - Google Patents

Info

Publication number
JPH10209008A5
JPH10209008A5 JP1997008443A JP844397A JPH10209008A5 JP H10209008 A5 JPH10209008 A5 JP H10209008A5 JP 1997008443 A JP1997008443 A JP 1997008443A JP 844397 A JP844397 A JP 844397A JP H10209008 A5 JPH10209008 A5 JP H10209008A5
Authority
JP
Japan
Prior art keywords
mask
charged particle
particle beam
beam exposure
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997008443A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10209008A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP844397A priority Critical patent/JPH10209008A/ja
Priority claimed from JP844397A external-priority patent/JPH10209008A/ja
Publication of JPH10209008A publication Critical patent/JPH10209008A/ja
Publication of JPH10209008A5 publication Critical patent/JPH10209008A5/ja
Pending legal-status Critical Current

Links

JP844397A 1997-01-21 1997-01-21 荷電ビーム露光方法およびマスク Pending JPH10209008A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP844397A JPH10209008A (ja) 1997-01-21 1997-01-21 荷電ビーム露光方法およびマスク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP844397A JPH10209008A (ja) 1997-01-21 1997-01-21 荷電ビーム露光方法およびマスク

Publications (2)

Publication Number Publication Date
JPH10209008A JPH10209008A (ja) 1998-08-07
JPH10209008A5 true JPH10209008A5 (enExample) 2004-12-24

Family

ID=11693278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP844397A Pending JPH10209008A (ja) 1997-01-21 1997-01-21 荷電ビーム露光方法およびマスク

Country Status (1)

Country Link
JP (1) JPH10209008A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246298A (ja) * 2001-02-20 2002-08-30 Nikon Corp 荷電粒子線露光装置の結像性能の評価方法及び荷電粒子線露光装置
AU2003261317A1 (en) * 2002-08-01 2004-02-23 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
JP4819307B2 (ja) * 2003-10-15 2011-11-24 大日本印刷株式会社 荷電粒子線用転写マスクとその製造方法
JP4665679B2 (ja) * 2005-09-12 2011-04-06 凸版印刷株式会社 フォトマスク及びその歪み検出装置及び半導体集積回路の製造方法

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