JPH10189888A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH10189888A
JPH10189888A JP9280066A JP28006697A JPH10189888A JP H10189888 A JPH10189888 A JP H10189888A JP 9280066 A JP9280066 A JP 9280066A JP 28006697 A JP28006697 A JP 28006697A JP H10189888 A JPH10189888 A JP H10189888A
Authority
JP
Japan
Prior art keywords
film
semiconductor
insulating film
semiconductor device
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9280066A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10189888A5 (OSRAM
Inventor
Kiyoyuki Morita
清之 森田
Tadashi Morimoto
廉 森本
Koichiro Yuki
康一郎 幸
Sei Araki
聖 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9280066A priority Critical patent/JPH10189888A/ja
Publication of JPH10189888A publication Critical patent/JPH10189888A/ja
Publication of JPH10189888A5 publication Critical patent/JPH10189888A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP9280066A 1996-10-22 1997-10-14 半導体装置及びその製造方法 Pending JPH10189888A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9280066A JPH10189888A (ja) 1996-10-22 1997-10-14 半導体装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP27909196 1996-10-22
JP8-279091 1996-10-22
JP9280066A JPH10189888A (ja) 1996-10-22 1997-10-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH10189888A true JPH10189888A (ja) 1998-07-21
JPH10189888A5 JPH10189888A5 (OSRAM) 2006-06-22

Family

ID=26553172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9280066A Pending JPH10189888A (ja) 1996-10-22 1997-10-14 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPH10189888A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006083112A1 (en) * 2005-02-02 2006-08-10 Jung-Beom Choi Spin qubit-based quantum computing logic gate
JP2007189008A (ja) * 2006-01-12 2007-07-26 Elpida Memory Inc 半導体記憶装置およびその製造方法
WO2010150407A1 (ja) * 2009-06-26 2010-12-29 株式会社 東芝 半導体装置
US7923810B2 (en) 2007-10-18 2011-04-12 Samsung Electronics Co., Ltd. Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006083112A1 (en) * 2005-02-02 2006-08-10 Jung-Beom Choi Spin qubit-based quantum computing logic gate
JP2007189008A (ja) * 2006-01-12 2007-07-26 Elpida Memory Inc 半導体記憶装置およびその製造方法
US7923810B2 (en) 2007-10-18 2011-04-12 Samsung Electronics Co., Ltd. Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same
WO2010150407A1 (ja) * 2009-06-26 2010-12-29 株式会社 東芝 半導体装置

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