JPH10173169A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH10173169A
JPH10173169A JP8335709A JP33570996A JPH10173169A JP H10173169 A JPH10173169 A JP H10173169A JP 8335709 A JP8335709 A JP 8335709A JP 33570996 A JP33570996 A JP 33570996A JP H10173169 A JPH10173169 A JP H10173169A
Authority
JP
Japan
Prior art keywords
film
oxide film
metal oxide
conductive metal
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8335709A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10173169A5 (https=
Inventor
Kazuaki Nakajima
一明 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP8335709A priority Critical patent/JPH10173169A/ja
Priority to US08/988,554 priority patent/US6214724B1/en
Publication of JPH10173169A publication Critical patent/JPH10173169A/ja
Publication of JPH10173169A5 publication Critical patent/JPH10173169A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/669—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP8335709A 1996-12-16 1996-12-16 半導体装置及びその製造方法 Pending JPH10173169A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8335709A JPH10173169A (ja) 1996-12-16 1996-12-16 半導体装置及びその製造方法
US08/988,554 US6214724B1 (en) 1996-12-16 1997-12-11 Semiconductor device and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8335709A JPH10173169A (ja) 1996-12-16 1996-12-16 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH10173169A true JPH10173169A (ja) 1998-06-26
JPH10173169A5 JPH10173169A5 (https=) 2004-11-25

Family

ID=18291610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8335709A Pending JPH10173169A (ja) 1996-12-16 1996-12-16 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US6214724B1 (https=)
JP (1) JPH10173169A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010059854A (ko) * 1999-12-30 2001-07-06 박종섭 반도체장치 및 그 제조방법
JP2007103549A (ja) * 2005-10-03 2007-04-19 Fujitsu Ltd 半導体装置およびその製造方法
KR100743618B1 (ko) * 2000-12-29 2007-07-27 주식회사 하이닉스반도체 반도체 소자의 게이트 및 그 제조방법
JP2008529274A (ja) * 2005-01-26 2008-07-31 フリースケール セミコンダクター インコーポレイテッド Ｃｍｏｓプロセス用金属ゲート・トランジスタ及びその製造方法
WO2011043116A1 (ja) * 2009-10-05 2011-04-14 住友電気工業株式会社 半導体装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP2002260951A (ja) * 2000-12-28 2002-09-13 Denso Corp 積層型誘電素子及びその製造方法，並びに電極用ペースト材料
US6762090B2 (en) * 2001-09-13 2004-07-13 Hynix Semiconductor Inc. Method for fabricating a capacitor
US7019351B2 (en) * 2003-03-12 2006-03-28 Micron Technology, Inc. Transistor devices, and methods of forming transistor devices and circuit devices
US7297602B2 (en) * 2003-09-09 2007-11-20 Sharp Laboratories Of America, Inc. Conductive metal oxide gate ferroelectric memory transistor
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
KR102420689B1 (ko) 2010-02-26 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20140269046A1 (en) * 2013-03-15 2014-09-18 Micron Technology, Inc. Apparatuses and methods for use in selecting or isolating memory cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358892A (en) * 1993-02-11 1994-10-25 Micron Semiconductor, Inc. Etch stop useful in avoiding substrate pitting with poly buffered locos
US5472904A (en) * 1994-03-02 1995-12-05 Micron Technology, Inc. Thermal trench isolation
KR0135691B1 (ko) * 1994-07-20 1998-04-22 김주용 트랜지스터 및 그 제조방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010059854A (ko) * 1999-12-30 2001-07-06 박종섭 반도체장치 및 그 제조방법
KR100743618B1 (ko) * 2000-12-29 2007-07-27 주식회사 하이닉스반도체 반도체 소자의 게이트 및 그 제조방법
JP2008529274A (ja) * 2005-01-26 2008-07-31 フリースケール セミコンダクター インコーポレイテッド Ｃｍｏｓプロセス用金属ゲート・トランジスタ及びその製造方法
JP2007103549A (ja) * 2005-10-03 2007-04-19 Fujitsu Ltd 半導体装置およびその製造方法
WO2011043116A1 (ja) * 2009-10-05 2011-04-14 住友電気工業株式会社 半導体装置
US8963163B2 (en) 2009-10-05 2015-02-24 Sumitomo Electric Industries, Ltd. Semiconductor device

Also Published As

Publication number Publication date
US6214724B1 (en) 2001-04-10

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