JPH10112507A5 - - Google Patents

Info

Publication number
JPH10112507A5
JPH10112507A5 JP1997004266A JP426697A JPH10112507A5 JP H10112507 A5 JPH10112507 A5 JP H10112507A5 JP 1997004266 A JP1997004266 A JP 1997004266A JP 426697 A JP426697 A JP 426697A JP H10112507 A5 JPH10112507 A5 JP H10112507A5
Authority
JP
Japan
Prior art keywords
opening
oxide film
silicon oxide
silicon nitride
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997004266A
Other languages
English (en)
Japanese (ja)
Other versions
JP3695029B2 (ja
JPH10112507A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP00426697A priority Critical patent/JP3695029B2/ja
Priority claimed from JP00426697A external-priority patent/JP3695029B2/ja
Priority to NL1006758A priority patent/NL1006758C2/nl
Priority to US08/909,813 priority patent/US5858850A/en
Priority to KR1019970038520A priority patent/KR19980018636A/ko
Publication of JPH10112507A publication Critical patent/JPH10112507A/ja
Publication of JPH10112507A5 publication Critical patent/JPH10112507A5/ja
Application granted granted Critical
Publication of JP3695029B2 publication Critical patent/JP3695029B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP00426697A 1996-08-14 1997-01-14 半導体装置の製造方法 Expired - Fee Related JP3695029B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP00426697A JP3695029B2 (ja) 1996-08-14 1997-01-14 半導体装置の製造方法
NL1006758A NL1006758C2 (nl) 1996-08-14 1997-08-11 Werkwijze voor fabricage van een halfgeleiderinrichting.
US08/909,813 US5858850A (en) 1996-08-14 1997-08-12 Process of fabricating integrated heterojunction bipolar device and MIS capacitor
KR1019970038520A KR19980018636A (ko) 1996-08-14 1997-08-13 반도체 장치 제조 공정

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-214437 1996-08-14
JP21443796 1996-08-14
JP00426697A JP3695029B2 (ja) 1996-08-14 1997-01-14 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH10112507A JPH10112507A (ja) 1998-04-28
JPH10112507A5 true JPH10112507A5 (enExample) 2004-09-09
JP3695029B2 JP3695029B2 (ja) 2005-09-14

Family

ID=26338012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00426697A Expired - Fee Related JP3695029B2 (ja) 1996-08-14 1997-01-14 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US5858850A (enExample)
JP (1) JP3695029B2 (enExample)
KR (1) KR19980018636A (enExample)
NL (1) NL1006758C2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1080490B1 (en) * 1999-03-10 2007-12-26 Nxp B.V. Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor
FR2792775B1 (fr) * 1999-04-20 2001-11-23 France Telecom Dispositif de circuit integre comprenant une inductance a haut coefficient de qualite
TW557569B (en) * 2000-01-24 2003-10-11 Sony Corp Semiconductor device and manufacturing method thereof
JP2001217317A (ja) * 2000-02-07 2001-08-10 Sony Corp 半導体装置およびその製造方法
JP2003031674A (ja) * 2001-07-12 2003-01-31 Sony Corp 半導体装置及びその製造方法
GB0126895D0 (en) * 2001-11-08 2002-01-02 Denselight Semiconductors Pte Fabrication of a heterojunction bipolar transistor with intergrated mim capaci or
US7521733B2 (en) * 2002-05-14 2009-04-21 Infineon Technologies Ag Method for manufacturing an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor
JP2010245318A (ja) * 2009-04-07 2010-10-28 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20130284666A1 (en) 2011-01-11 2013-10-31 Leon Gradon Pleated filter and a method for manufacturing of pleated filters

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330431A (ja) * 1989-06-28 1991-02-08 Fujitsu Ltd バイポーラ半導体装置およびその製造方法
JP2940306B2 (ja) * 1992-06-24 1999-08-25 松下電器産業株式会社 ヘテロ接合バイポーラトランジスタ集積回路装置およびその製造方法
JP2762851B2 (ja) * 1992-07-27 1998-06-04 日本電気株式会社 半導体装置の製造方法
US5407841A (en) * 1992-10-30 1995-04-18 Hughes Aircraft Company CBiCMOS fabrication method using sacrificial gate poly
KR940018967A (ko) * 1993-01-30 1994-08-19 오가 노리오 반도체장치 및 그 제조방법
JPH08172139A (ja) * 1994-12-19 1996-07-02 Sony Corp 半導体装置製造方法
FR2757683B1 (fr) * 1996-12-20 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire et capacite

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