JPH10107318A5 - - Google Patents

Info

Publication number
JPH10107318A5
JPH10107318A5 JP1996257879A JP25787996A JPH10107318A5 JP H10107318 A5 JPH10107318 A5 JP H10107318A5 JP 1996257879 A JP1996257879 A JP 1996257879A JP 25787996 A JP25787996 A JP 25787996A JP H10107318 A5 JPH10107318 A5 JP H10107318A5
Authority
JP
Japan
Prior art keywords
electrode
compound semiconductor
gallium nitride
nitride compound
thin films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996257879A
Other languages
English (en)
Japanese (ja)
Other versions
JP3710573B2 (ja
JPH10107318A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP25787996A priority Critical patent/JP3710573B2/ja
Priority claimed from JP25787996A external-priority patent/JP3710573B2/ja
Publication of JPH10107318A publication Critical patent/JPH10107318A/ja
Publication of JPH10107318A5 publication Critical patent/JPH10107318A5/ja
Application granted granted Critical
Publication of JP3710573B2 publication Critical patent/JP3710573B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP25787996A 1996-09-30 1996-09-30 窒化ガリウム系化合物半導体発光素子の電極構造 Expired - Fee Related JP3710573B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25787996A JP3710573B2 (ja) 1996-09-30 1996-09-30 窒化ガリウム系化合物半導体発光素子の電極構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25787996A JP3710573B2 (ja) 1996-09-30 1996-09-30 窒化ガリウム系化合物半導体発光素子の電極構造

Publications (3)

Publication Number Publication Date
JPH10107318A JPH10107318A (ja) 1998-04-24
JPH10107318A5 true JPH10107318A5 (enExample) 2005-06-09
JP3710573B2 JP3710573B2 (ja) 2005-10-26

Family

ID=17312460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25787996A Expired - Fee Related JP3710573B2 (ja) 1996-09-30 1996-09-30 窒化ガリウム系化合物半導体発光素子の電極構造

Country Status (1)

Country Link
JP (1) JP3710573B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6201264B1 (en) * 1999-01-14 2001-03-13 Lumileds Lighting, U.S., Llc Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
WO2009154191A1 (ja) * 2008-06-16 2009-12-23 昭和電工株式会社 半導体発光素子、その電極並びに製造方法及びランプ
JP5515431B2 (ja) * 2008-06-16 2014-06-11 豊田合成株式会社 半導体発光素子、その電極並びに製造方法及びランプ
CN102124574B (zh) 2008-06-16 2013-07-17 丰田合成株式会社 半导体发光元件、其电极及制造方法以及灯

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